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Context-aware recommendation systems make recommendations by adapting to user's specific situation, and thus by exploring both the user preferences and the environment. In this paper, we propose a context-aware service recommendation framework utilising semantic knowledge in the Ubiquitous Consumer Wireless World (UCWW). The main objective of the framework is to provide users with the ‘best’ service...
The switching characteristics of the resistive switching memory with local electrical field are investigated. The local electrical fields in the HfOx film are created by some sharp regions of bottom electrode. Compared with planar structures, this design can improve the yield and uniformity of set/reset voltage for Pd/HfOx/TiN structure. Results indicate that the sample with spacer and raised structures...
Bayesian Networks have various applications including medical and technical diagnosis, financial scoring, and target behavior/pattern recognition. Bayesian Classification Networks fuse evidence from heterogeneous and homogeneous sources and calculate classification results. For many reasons, pieces of evidence from different sources can carry apparently contradicting information and in these cases...
In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrödinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally,...
This work reports multi-VT Ge gate stacks using low energy plasma-assisted doping (PLAD) with N2 for Ge p-FinFET applications. Varying implant dose and energy is used to demonstrate effective TiN work-function tuning over a range of 170 mV from near-midgap to near-valence band edge of Ge without significant impact on gate capacitance (effective oxide thickness (EOT)), interface quality and TiN resistance...
We have analyzed how the mechanical and geometrical parameters of the Open Through Silicon Vias influence failures induced by delamination of the interfaces. Through Silicon Vias are the units of the interconnection structure that establish the connection through the silicon die. We show that there are different factors that influence the failure of the device by analyzing the effect of external forces...
This work aims to study the reliability of the Si film thickness extraction method based on the capacitance derivative analysis in p-i-n gated diodes. Results provided by the derivative procedure are compared to the basic capacitance method (without the derivative). The basic method yields accurate Si-film thicknesses, but it can only be applied to relatively thick body devices where the supercoupling...
There is a great interest in understanding the properties of sputtered DLC films in order to enable their wide application in electronic devices and sensors. In present study, metal-containing diamond-like carbon (Me-DLC) thin films were deposited on Si (100) substrates by DC magnetron co-sputtering using a carbon target under a fixed power (150 W) and a metal target (tin or tungsten) under varying...
An 8-bit stage-interleaved pulse-shrinking time-to-digital converter (TDC), aiming at minimizing silicon consumption, improving the linearity to minimize the number of fine TDCs and removing the speed penalty without sacrificing conversion time and resolution is proposed. The proposed TDC quantizes time variables using a 16-stage coarse pulse-shrinking TDC with resolution 4.8 ns. The residue of the...
Deep insights into the Off-State Stress (OSS) degradation mechanism on p-MOSFETs with High-K/Metal Gate technology are presented in this paper. Large subthreshold slope degradation, or positive Vth shift is observed in high, or low Vth devices, where both phenomena impact the off current degradation. The OSS degradation mechanism in pMOS is generated by (1) hot carrier generation close to the drain...
In very large distributed sensor networks, transmission identifiers have to be shared among several nodes due to limited bandwidth and hardware resources. In this work, we propose and investigate an algorithm targeting this issue of nonunique identification in the framework of network localization. Our proposed method is based on a two-stage approach: The estimation of adjacency information based...
We report a comprehensive evaluation of different device architectures from a device and circuit performance viewpoint: gate-all-around (GAA) nanowire (NW) FETs vs. triple-gate finFETs, both built using various doping schemes. GAA devices are obtained via a fins release process, high density compatible, at replacement metal gate (RMG) module, and outperform others per footprint. Junctionless (JL)...
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high...
In this paper we present a merging procedure which is used to build a consistent description of the European network based on the data provided by the different Transmission System Operators (TSOs). In order to deal with inconsistencies in the data, we introduce a modified Optimal Power Flow (OPF) minimizing the deviation from TSOs data. Results on the European network demonstrate the interest of...
In this work we have studied delamination in Open Through Silicon Vias structures under different initial stress loads. The study has been carried out by means of simulation which is based on the evaluation of the J integral for different interfaces. Our simulations enabled us to determine the structures with the lowest failure probability.
Wireless sensor nodes are now cheap and reliable enough to be deployed in different environments. However, their limited energy capacity limits their lifespan. In this paper, a Management strategy at network-level of a set of nodes is implemented, taking into account an estimation of the remaining energy in each sensor node. The control formulation is based on Model Predictive Control with constraints...
Titanium dioxide, known as a high-k biocompatible dielectric transducer material, is processed by means of ALD and applied to a 3D structure with dimensions typical for multi-site multi-channel in-vivo neural interfaces. High uniformity, high areal capacitance, and in particular low leakage current densities are achieved within a sufficiently wide operation voltage window. The results demonstrate...
In the neoteric years, femtocell pastimes an imperious preamble in wireless networks for some of its noteworthy idiosyncratics such as low power consumption, spectrum reuse, improvement of indoor coverage and capacity etc. The femtocell access point (FAP) diminishes the maintenance and operational cost as well as handing out good Quality of Service (QoS) and high network capacity gains. Pandemic deployment...
Ferromagnetic L10-ordered τ-phase MnAl thin films have been shown to exhibit high perpendicular magnetic anisotropy (Ku > 107 ergs/cm3), moderate saturation magnetization (M < 600 emu/cm3), and low Gilbert damping parameter (α = 0.006) [1]. x-MnAl is also rare earth- and precious metal-free, making it an attractive candidate for a variety of applications such as magnetic recording, nonvolatile...
Most contemporary manufacturing systems appear as complex event-driven automation facilities. Supervisor synthesis and simplification are fundamental in automated manufacturing systems (AMSs). From design and implementation standpoints, it is preferable to decrease supervisor scales so as to mitigate their realization expense. Ordinary and general Petri nets are considered as powerful formalisms to...
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