The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we propose a novel Si-compatible resonant plasma-wave transistor (R-PWT) with 2D silicene channel for a high-performance terahertz (THz) electromagnetic (EM) wave emitter. High resonance quality i.e. narrow emission spectra can be obtained by high mobility of 2D silicene channel (μ= 2×105 cm2V−1·s−1) since nanoscale channel length L can be much smaller than the maximum channel length...
In recent years, spin-MOSFETs [1] have received much attention for low-power and high-performance integrated circuits. Figure 1 shows the schematic device structure of a spin-MOSFET that employs half-metallic ferromagnet tunnel contacts for the source and drain. To realize spin-MOSFETs, highly efficient spin-injector/detector for the Si channel is required. Half-metallic full-Heusler alloy Co2FeSi...
A new concept of the structure design with an alignment between the maximum band-to-band tunneling rate and electric field has been proposed to enhance the performance of TFETs. It was found that the specific gate of TFET to form an obtuse shape can dramatically improve the on-current of TFET, with over 4 order improvement in comparison to planar ones. This complementary TFET (CTFET) was also demonstrated...
A metal field plate thin-film transistor combined with extended drift region is fabricated. In this study, the influence of different channel wire width (W0) and extended length (LEX) on off-state leakage current and on-state current are investigated. When extending the drift region, the electric field near drain is suppressed and the gate induced drain leakage (GIDL) is reduced. In addition, high...
Over recent years, spin-MOSFETs (Fig.1) [1] have attracted considerable attention as a key transistor for low-standby-power integrated circuits. To realize spin MOSFETs, understanding and controlling of spin dynamics in the Si channel is indispensable. The Hanle effect of spin-polarized electrons transported in the channel of spin devices is a powerful tool for evaluating spin dynamics. Using the...
We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to prominent inhomogeneity of dopant distribution...
Frequency-dependent response of nanoscale thermocouples (NTCs) is studied by using a temperature oscillation produced by a nanoscale heater. The thermal response of the NTC and the heater is measured as a function of heater-current frequency by the 2ω and the 3ω method, respectively.
Integrating a micro-magnet (MM) to a quantum dot (QD) is a promising route to realize highly coherent control of single electron spins on a chip [1]. In order to apply this spinmanipulation technique to Si QDs, miniaturizing the QD while maintaining the controllability is essential to lift the valley degeneracy [2]. Here we fabricated a MOS-QD under a thin gate oxide integrated with Al gates to accumulate...
Gate-coupled reflectometric spectrometry has recently emerged as a tool for studies of transport in nanostructures. Here we report reflectometric spectroscopy of a double-gate single electron device in which two coupled quantum dots are formed under the gates. The spectroscopy is performed by detection of charging processes in the system using a dual port reflectometer. The potential application of...
We present a new engineering method to achieve high-performance graphene single-carrier transistors (GSCTs) by suppressing the formation of unwanted carrier (electrons/holes) puddles in GSCTs by comparing the three devices with different constriction dimensions. GSCTs with wider and longer constrictions exhibited the presence of multiple carrier puddles in the channel regions. The GSCTs with narrower...
In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020 cm−3 electrical concentration and about 1.75×10−6 ohm·cm2 contact resistivity have been achieved at P+ implantation of 10keV and 5×1014cm−2 and annealing condition of 600oC, 10seconds. The fabricated N+/P diode...
As se miconductor devices continue to get s maller, it is clear that quantum effects will begin to play a larger role in their behavior. Phase interference and the energy relaxation via electron-electron interactions are key quantum effects which can occur in small devices. These are studied best at low temperature where other processes are quenched. Here, we discuss these effects in graphene.
In this paper, we evaluate the various technological solutions and roadblocks for co-integrating p-Ge and n-InGaAs MOSFETs in a 3-D monolithic CoolCubeTM technology. In particular, the process sequence (Ge-p-MOS-1st or III-V-n-MOS-1st) is examined in the light of thermal budget limitations arising from junctions definition.
Heavy impurity doping is known to soften the lattice system in Si and Ge, experimentally [1, 2]. Although it is theoretically explained by the Fano-type electron-phonon interaction [3], it is practically important as well whether this effect may come from heavy impurity doping or high carrier density in semiconductors. Moreover, it may become more important in nano-devices, because the whole channel...
Storage-Class Memory (SCM), NAND flash hybrid Solid-State Drive (SSD) shows advantages of high performance and low power consumption compared with NAND flash only SSD. In this paper, first, three types of SCMs are analyzed respectively, with 0.1 μs, 1 μs and 10 μs read/write times. Then, their SCM/NAND flash capacity ratios are calculated to achieve the required SSD performance for the application...
This work presents a built-in effective body-bias effect (VBS, eff) in ultra-thin-body and BOX (UTBB) hetero-channel MOSFETs. This effect stems from the discrepancies in the electron affinity, the effective density-of-states, and the band-gap between the high-mobility channel and conventional Si channel. Physical VBS, eff models quantifying this effect are presented for nFET and pFET, respectively...
This work demonstrates p-type hybrid poly-Si fin channel junctionless field-effect transistor (JL-FET) with trench structure by dry etching process. This JL-FET shows superior performance in a low drain-induced barrier lowering (<10mV/V) and high Ion/Ioff (>108) for Leff = 1μm, excellent gate control.
We present a physically grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation channel materials. The framework consists of a fast and accurate Schrödinger-Poisson solver/mobility extractor coupled to a device simulator. The framework brings physical modeling of semiconductor channels to device design and engineering...
Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.