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The SBMicro symposium is an international forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices, held annually in Brazil. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS.
The electrical properties of RF magnetron sputtered HfO2 layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated. The dielectric constant of the HfO2 layer was around 9 measured at 10 kHz. The critical electric field was higher than 5×105 V/cm and the leakage current below 5×10−9 A/cm2. The effective charged density...
In this paper, the dark current in Quantum Well Infrared Photodetectors (QWIP) operating at the thermionic regime is computed by a semiclassical model based on the Ehrenfest Theorem. The model is independent of adjusting or empirical parameters. The corresponding wave functions are calculated considering a nonparabolic approximation and temperature-dependent energy gap. The theoretical results are...
Quantum dot intermediate band solar cells (QD-IBSC) have been produced in order to pave the road to high efficiency solar cells, demonstrating sub-bandgap absorption. Even though the obtained figures of merit are still lower than those of the samples without the quantum dots, optical activity of the nanostructures has been demonstrated. While the photovoltaic activity of the QD-IBSC is observed for...
Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the...
We report experimental results on pedestal waveguides produced with Yb3+ /Er3+ codoped PbO-GeO2 thin films deposited by RF Sputtering for photonic applications. Losses around 2.5 dB/cm and 1.5 dB/cm were obtained at 632 and 1068 nm, respectively, for waveguides in the 20–100 µm width range. Internal gain of 6.0 dB and 4.0 dB, at 1530 nm, under 980 nm excitation, were measured for waveguides width...
Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were deposited by reactive sputtering from silicon target. The composition and thickness were extracted by Rutherford backscattering spectroscopy measurement. Photo and electroluminescence spectra have been compared and there is a considerable difference...
In this paper we propose, for the first time, all-optical Majority and Feynman gates in two-dimensional silicon photonic crystals. Photonic crystals are optical semiconductor nanodevices, formed by a periodicity in one, two or three dimensions in the refractive index of a macroscopic media. These devices can operate with low power consumption, high speed and low dissipation of energy to heat. A photonic...
Nanowires (NW) have received much attention due to their shape anisotropy, high aspect ratio, relatively large surface area and particular electron transport properties. In addition, NW can be used as sensor devices for several applications, since they present high sensitivity to the environment. One of the major challenges when dealing with transport measurements in NW is to trap them between electrodes,...
In this work, the Radiation Hardened by Design (RHBD) of an inverter cell is proposed. The design considers the use of standard CMOS processes with commercial PDK, focusing on fully incorporating the design into CAD tools allowing the automatic place & route. Corners and Monte Carlo simulations were performed in order to analyze and compare the performances between the standard cells and proposed...
The formation of self-assembled InAs quantum dots is investigated as the growth time increases from 3.6 to 12 seconds at a low growth rate. The morphological evolution from a rough surface at a short length scale to an extended 2D InAs flat area, and finally to the 3D InAs islands is followed using atomic force microscopy, photoluminescence and transmission electron microscopy. We show that micrometer...
In this work, hydrogenated amorphous silicon (a-Si:H) films were deposited by electron cyclotron resonance (ECR) - chemical vapor deposition (CVD) and used as spacer to implement the spacer lithography (SL) technique. This technique was employed to define silicon nanowires (SiNWs), which are three-dimensional (3D) structures on Si surface. With these SiNWs, 3D MOS (metal-oxide-semiconductor) capacitors...
This paper reports, for the first time, the use of back gate bias to improve the intrinsic voltage gain of self-cascode structures composed by planar FD and UTBB SOI MOSFETs. It is shown a voltage gain improvement larger than 10 dB when either a forward back bias is applied to the drain-side transistor or a reverse back bias is applied to the source side device.
This paper evaluates the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) to produce passive devices. The polymer was used as the dielectric and Ni-P/Au was used as the conductor film. The resistors' sheet resistance was measured with both TLM and direct measurement while the measurements of the capacitors and inductors required the usage of...
This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
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