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In the last twenty years we have seen a revolution comparable to the industrialization. We have gone from voice, to data, to mobile broadband to a situation where half of the two-year olds in Sweden use internet. We have changed how we are creating and sharing knowledge, how we interact with family and friends, how we work and how we do business. We have seen traditional industries transform… music,...
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original...
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized...
Over the last five years, a series of novel organic materials that either occur freely or are extracted from nature have been applied in transistors and simple electronic circuits (inverters) as biocompatible and biodegradable dielectrics and semiconductors. Although these materials have natural origin, are abundant on earth and in many respects were exploited by humanity since centuries or even millennia,...
CMOS utilizing high mobility Ge/III-V channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications...
In this work we present investigations on ultrathin and monolayered transition metal dichalcogenides (TMDs). These recently have raised much interest for their applications in electronics. TMDs can be n- and p-type semiconductors and some of them undergo a change in band structure when thinned to a monolayer. In particular, with the TMD MoS2, a number of devices such as transistors, photodiodes, LEDs...
NEMS based sensors open several opportunities for integrated solutions in emerging domains as chemical analysis and life science. With critical dimensions ranging between 10 and 100 nm, those devices can be made at the VLSI scale, possibly co-integrated with CMOS and are well suited for autonomous, highly sensitive or dense sensors. Several applications will be presented, as complex gas portable recognitions...
The author's career has coincided with the development of numerical simulation into an essential component of semiconductor device technology research and development. We now have a sophisticated suite of simulation capabilities along with new challenges for 21st Century electronics. This talk presents a short history of the field and a description of the current state of the art, but it concentrates...
In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunneling model. A good agreement with numerical simulations for varying device parameters is demonstrated and the advantages and limitations of the...
A recursive model for the quasi-static current-voltage (I-V) characteristic of voltage-driven bipolar resistive RAM (RRAM) devices is reported. The model is based on the Krasnosel'skiĩ-Pokrovskiĩ hysteresis operator and accounts for the sequential creation and destruction of conductive channels spanning the dielectric film. It is shown in this work how the basic model formulation can be upgraded so...
Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving...
A new modeling framework of an electrically driven fluid flow system for mixed-domain circuit simulation is reported. Coupling between electrical and fluidic domains is implemented by developing an organic actuator compact model. The actuator model is based on force balance spring-mass-damper system equation. Fluid compact model is derived from mass transport equation. The actuator and the fluid models...
In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-HEMTs with different dielectric stacks in the gate and gate drain access region and performed interface characterization and stress measurements for slow traps analysis. Our results show a high dependency of the on-resistance increase...
We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k...
This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron...
Several edge termination structures for high voltage 4H-SiC devices compatible with a planar MOSFET fabrication process are analyzed in this paper. The edge terminations' efficiency has been analyzed on PiN diodes with breakdown voltage capabilities ranging from 2–5kV fabricated with full MOSFET process. Different edge terminations consisting in JTEs and FGRs, and a combination of JTEs and FGRs have...
Charge trapping phenomena at interfaces of GaN-based semiconductors with a dielectric are one of the major concerns in modern MIS-HEMT technologies. Fundamental questions about the nature and the behavior of interface defects must still be answered. We address these questions by investigating devices with and without an AlGaN layer at the the interface with the dielectric, using MIS capacitor test...
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