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Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual...
Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV (at L point) and a direct bandgap of 0.8eV [1]. When strain is applied, the band structure of germanium will be altered. When the strain is tensile, both the indirect and the direct bandgaps tend to decrease. Under certain strains, the direct...
To study the High-k dielectrics on alternate semiconductor materials for transistors a modeling platform has been developed which implements a faster 1D Schrodinger-Poisson along with trap models. A fitting algorithm is used for the extraction of trap profiles which fits the model capacitance/admittance to the measurements in the least square sense. The extraction is illustrated on a subnanometer...
Practical models of lithographic processes are usually empirically calibrated, making their accuracy dependent on the total number of samples used to build the models, and more specifically on the selection of a representative set of samples for calibration. An inadequate number of samples can adversely impact model accuracy, but a broadly comprehensive set will excessively increase measurement cost...
A moving mesh method for semiconductor device simulation is developed which effectively compromises accuracies without increasing mesh number. In this method, mesh positions are shifted referring to the solution of the previous bias condition, or to the Newton corrections. The method is applied to solve PN-junctions and MOSFETs. The method provides an effective way to cover the changes of carrier...
We propose a TDDB model which can predict the breakdown time distributions when the trap distribution in the oxide is “non-uniform”. This is an extension of the conventional cell-based model that has been limited to the case of uniform trap distribution. The verification of the proposed model is conducted by comparing it with the Monte Carlo simulation. It turns out that the proposed model successfully...
The introduction of non-volatile elements into state-of-the art computing systems is a promising way to circumvent power dissipation and interconnection delay bottlenecks. This led us to the proposal of a non-volatile magnetic flip flop which offers high integration density as well as CMOS compatibility by not only acting as an auxiliary memory element but also carrying out the actual computation...
This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD model of the solar cell to a “standard” TCAD...
In this paper, we propose a novel sandwiched-gate inverter by using of an NMOS GAA together with a donut-type PMOS. The DC operation and the transient performance of the proposed inverter were investigated with 3D TCAD simulations. The proposed inverter exhibits a correct inverter operation with a high noise margin and speed.
A compact model of GaN HEMT is developed, which solves the Poisson equations explicitly. The model includes all possible charges induced within the device including the trap density. It is verified that the model can reproduce all 2D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured accurately by adjusting the trap...
Spike time dependent plasticity (STDP) is synaptic conductivity modulation which is dependent upon the time difference between pre- and post-synaptic neuronal spikes. Superposition of extended waveforms from pre- and post-synaptic neurons has been proposed to apply a pre- vs. post-neuron spike time difference dependent voltage across an RRAM based synapse to implement STDP. Such long waveforms are...
Continuum models of transport in carbon nanotubes and graphene nanoribbons are created by treating the charge flow in the carbon layers in a 2D diffusion-drift approximation. A crucial element of the treatment is the electron equation of state that allows the effects of confinement and chirality to be represented. To model nanowire devices, the transport layer is embedded within a 3D structure and...
This paper presents a feasibility study that the drift-diffusion model can capture the ballistic transport of FinFETs and nanowires with a simple model extension. For FinFETs, Monte Carlo simulation is performed and the ballistic mobility is calibrated to linear & saturation currents. It is validated that the calibrated model works over a wide range of channel length and channel stress. The ballistic...
This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling...
In this paper, by using comprehensive statistical device simulation methodology, we investigate the effect of Statistical variability and reliability on the state of the art 14nm FinFET technology on important device figures of merit. Important sources of statistical variability have been considered in all simulation of fresh devices and various degradation levels are included in the reliability simulation...
In this paper, transverse magnetic (TM) propagation modes of surface plasmon polaritons (SPPs) in graphene micro/nano ribbons are exhaustively characterized by accounting for the finite lateral dimensions of graphene, screening of Fermi level in multilayer graphene stack, and the impact of dielectric permittivity and the associated charge impurities at the dielectric-graphene interface. Fermi level...
In addition to its high mobility, the possibility of opening sizable bandgaps has made bilayer graphene (BLG) a promising candidate for many electronic and optoelectronic applications. Yet, the achievable bandgap (300 meV) is not sufficient to make BLG a candidate for high performance transistors. Vertical strain in conjunction with the vertical field can help to achieve a larger band gap in BLG....
The effect of electron scattering on the plasma-wave instability in the channel of GFETs has been studied through solving the governing hydrodynamic (HD) equations numerically, which are based on the linear energy-momentum dispersion, i.e., Dirac cone, of graphene [1]. It is revealed that there exists a critical scattering strength determined by the carrier mobility and channel length, above which...
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