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This paper presents a universal self-aligned in situ on-chip micro tensile fracture strength tester designed for tensile strength extraction and process evaluation, which will provide, for the first time as far as the authors know, great force(above 100mN) to in situ on-chip specimen without the introduction of precise instrument, especially suitable for bulk micromachining related tests. The whole...
Transdermal drug delivery is an important approach due to its advantages of controlled release, easy wiping off, high safety and low degree of side effects. However, the efficiency and success of the drug delivery method is seriously hampered by the incapacity of many drugs to cross the skin at therapeutically useful rates. A microneedle approach can dramatically promote transdermal delivery, especially...
SiF4 PLAD has been systematically characterized and optimized. The correlations between the etching, deposition, retained F dose and profile as functions of the PLAD process variables including implant voltage, RF power, pressure, pulse duty cycle, and the diluting gases have been extensively investigated. It was found that PLAD process by using pure SiF4 is in an etching or RIE regime, but can be...
Through silicon vias are key components in 2.5D and 3D microelectronic packaging. Deep silicon etching is the critical step in fabrications of TSVs. Uniform metal-assisted chemical etching (MaCE) has been considered as a promising method to the conventional deep reaction ion etching for deep silicon etching. In this paper, we demonstrated that the uniform MaCE method is capable of fabricating vertical...
Fabrication and Ultraviolet (UV) detection properties of p-Si Nanowires (NWs)/n-TiO2 thin film-based heterojunction photodiodes have been reported in this paper. The highly oriented, uniform and vertically aligned p-type single crystalline silicon nanowire (SiNW) arrays have been synthesized by the two-step process of electroless metal deposition and etching technique. A thin layer (∼120 nm) of anatase...
Smart ICT (Information and Communication Technology) such as "Big Data", "Cloud computing" and Smart Functionalities such as Stand-alone Self-activating MEMS/Sensors construct Smart Systems which enable IoT (Internet of Things), IoE (Internet of Everything) thus Smart Society. To realize above-mentioned Smart Technologies, high-density, low-power consumption, wide-bandwidth, fast-operation...
Metal-assisted etching can be used to etch high aspect ratio structures in silicon (Si) wafers. Using Au as catalytic metal, we have developed a simple and robust technique which allows very high aspect ratio structures to be etched on n-type <100> substrates. For example, arrays of hundreds of narrow (10µm) and long (85mm) trenches can be etched completely through a 650µm thick wafer in order...
In this study, the fabrication of thin porous anodic aluminum oxide (AAO) templates with controllable thickness of 400–1300 nm is demonstrated. One-step anodizing method is used to generate AAO template with hexagonal porous distributed profile. The pore diameter pore-widening and AAO barrier layer thinned down are investigated. The morphologies and pore structures of the fabricated AAO templates...
In the present work, the room temperature deposited silicon dioxide thin films are explored for the fabrication of microelectromechanical systems (MEMS) components and the surface texturing for crystalline silicon solar cell applications. The etch rates of as-grown oxide films are investigated in different concentration tetramethylammonium hydroxide (TMAH) and potassium hydroxide (KOH) solutions at...
We demonstrate that the wrinkled Si1 -- xGex/Si1 -- y Gey films can serve as radiation sources, which emit electromagnetic waves in a very wide range of the frequencies including the terahertz band from 0.3 to 3 THz. The emission mechanism is based on the change of acceleration of carriers, when they travel along the sinusoidal trajectory in wrinkled Si1 -- xGex/Si1 -- yGey films, a manner similar...
A new oxidation reaction at ultralow temperature (−30°C) by bombardment of O2 neutral beam can be enhanced at the extremely low activation energy, which can efficiently form a thin oxide film of all transition metal, such as platinum and ruthenium. Meanwhile, a novel neutral beam enhanced chemical etching for transition metals and magnetic materials was proposed without chemical and physical damages...
"2.5D silicon interposers" and "Hetero 3D stacked" technology for high-performance LSI are gathering the most attention from now on. These technologies can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked each function devises. 2.5D and hetero-3D Si integration has great advantages over conventional 2D devices such as high packaging...
In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted...
In this study we presents an effective and simple process for forming multi-level vertical structures on a (100) silicon wafer. The dual materials including gold and platinum was employed as catalytic material in the etching process. We employed an etchant solution consisting of 4.6 M hydrofluoric acid, 0.44 M hydrogen peroxide, and isopropyl alcohol to produce microstructures at an etching rate of...
Polyvinylidene fluoride (PVDF) has a strong piezoelectricity. With the piezoelectric coefficient of poled thin films as large as 6–7 pC/N, PVDF is becoming a popular material for the sensors and energy harvesting. However, the fabrication process of PVDF is a big challenge due to the physical and chemical properties of PVDF. In this paper, a spiral-shaped PVDF cantilever is fabricated to harvest vibration...
Three-dimensional (3D) integration of MEMS and ICs enables improvements in device performance, and often requires through-silicon vias (TSVs). TSV technologies presently available for micro electromechanical systems (MEMS) either have completely filled vias or hollow vias. Hollow vias imply perforated wafers, and limit further processing options. We have investigated dry film resist which enables...
We report here the design and fabrication of freestanding Hafnium dioxide (HfO2) resonant gratings. The proposed freestanding HfO2 gratings are implemented on the prepared HfO2/Silicon wafer by combining ion beam etching (IBE) of HfO2 film with deep reactive ion etching (DRIE) of silicon substrate. The grating patterns are defined by electron beam lithography and then transferred to HfO2 film by IBE...
In this study, suspended graphene clamp-clamp beam (SGCCB) as long as 100 µm was manufactured by FIB cutting. Large-scale graphene film was grown on Cu foil by CVD and transferred to DRIE defined silicon substrate. The influence of FIB cutting time and ion beam intensity on the pattern profile were investigated with an optimized processing recipe. The SGCCBs revealed a sharp edge, which can be used...
Plasma processes have long been used in various stages of semiconductor device fabrication. Plasma enhanced chemical vapor deposition (PECVD) has been widely used as a low temperature silicon dioxide film deposition method in the semiconductor industry. [1,2] Various modes of plasma etching techniques also have been playing major roles in the silicon industry. Physical vapor deposition (PVD or sputtering),...
In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional 2D devices such as high packaging density, small wire length,...
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