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Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 20 kV. Also, sequential...
A simulation platform was established to evaluate device performance affected by ion implantation angle variation. Modeling of a one-dimensional wafer scanning system was performed to estimate the angle variation. Process simulation for fin field effect transistors (FinFET) revealed that twist angle affects dopant dose retention in the fin structure. However, the fin structure twists as the arm holding...
It has been performing to elucidate the basis of various physical processes, phenomena in an electron cyclotron resonance (ECR) plasma, and its various empirical methods. In order to obtain guiding principle for further improvement of the state of art technology on ECR ion source (ECRIS) will be used in various fields, the object is to develop moreover new fields together still existing applications...
This paper will examine the influence of ion angle deviation (IAD) on sheet resistance. The IAD is derived from the beam intensity profile measured in the MC3-II/GP medium current implanter. IAD is controlled independently in the horizontal and vertical directions by tuning voltages in the Qlens. It was found that the sheet resistance (Rs) regularly increases with an increase of IAD at a tilt of 0°...
PAS PFG is an efficient plasma flood for VIISta ribbon beams that produces process spec emission at < 1 Amp arc. The arc is based on the HD PFS technology previously used in AMAT batch and single wafer implanters. Aspects of positive and negative charging control are discussed.
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical...
Ion doping tools which have ability to process large size glass substrate with high productivity are briefly described. Such tools might develop new fields that utilize ion implantation technology. So far we tried several applications. In this study, three applications for which large area treatment will be essential to commercial production are reported.
We have developed a full metal seal compact ion source for the evaluation of the beam transport line. Positive ions of argon have been extracted from a compact full metal seal ion source of 55 mm diameter, 57 mm long inside volume. The argon ion beam current density was reached 0.18 mA/cm2 by changing the discharge current for source operating gas pressure above 6-9x10-9 Torr with 90 V discharge voltage,...
In this study, we investigated surface modification of poly ether ether ketone (PEEK) with gas cluster ion beam(GCIB) irradiation. Since GCIB induces high energy density on the irradiated surface, only surface layer is physically or chemically modified without introducing damages in the bulk substrate. The contact angle of water on PEEK decreased with the acceleration voltage of O2-GCIB, which indicated...
Fundamental studies have been made to elucidate the basis of various physical processes and physical phenomena in electron cyclotron resonance (ECR) plasma. In order to obtain guiding principle for further improvement of the state of art technology on ECR ion sources (ECRIS), it is the object to develop moreover efficiencies of them in new fields together still existing applications in various field...
A very compact analyzer, named U3DS, with a resolving power of around 30 is described, for delivering mass-analyzed ribbon ion beams from the ion source through a resolving slit to a substrate. The distance from ion source to substrate may be less than the breadth of the beam and of the substrate, for example about 1 meter, for a ribbon beam with a breadth of 2.2m or more. The simple apparatus comprises...
Aggressive scaling of semiconductor devices brings about several difficulties at the transistor level such as control of short channel effects, device variability etc. while maintaining low power consumption. The device manufacturers have adopted FinFETs to address a great majority of these issues. Since the 16nm node and beyond, all logic devices now have the FinFET architecture. One of the key requirements...
Metal-Organic Frameworks (MOFs) are porous extended crystalline structures comprised of organic ligands and metal units. By changing the identity of the organic ligand and metal unit utilized in the MOF synthesis, the structure, surface area, pore size, and reactivity of the MOF can be modulated. This structural flexibility means that MOFs can potentially be used in a wide range of storage, separation,...
Abstract- There is a need to improve the performance of Si+ implant dopant source for several emerging high dose low energy precision material modification implant applications. Beam current and source life obtained from SiF4, the currently available dopant source is not able to meet either the beam current or the ion source life desired to enable the adoption of such applications. This paper presents...
Advanced processes for next generation power devices have been studied in this paper. For silicon (Si)-IGBT applications, a near-perfect deep activation of over 4μm depth has been demonstrated in a phosphorous (Ph) doped Si wafer. In addition, progresses of epitaxial regrowth and ohmic contact formation on a silicon-carbide (SiC) wafer have been reported.
In recent years, deeper photodiode (PD) structures in advanced image sensors have been pursued to obtain higher light sensitivity. In order to form the deep PD structure, the ultra-high energy implantation is required. For example, 4MeV Phosphorus implantation is required to form a PD with depth of 3 m and 3MeV Boron is required for the cell isolation as well. Therefore, masking photoresist (PR)...
Ion Implantation processes contribute significantly to the development of power devices. In this case not smallest scale technologies are addressed, but accurate treatment of the frontside, backside and bulk material play a crucial role to guarantee for key parameters such as highest power densities and required switching behavior. Some representative examples of the development needs of high, medium...
Gas-based ion implantation with halogen containing compounds, especially fluorine, or oxygen, cause high stress on source materials such as tungsten and molybdenum. Sources can fail prematurely stemming from a reaction between halogen or oxygen ions in the source plasma with the source materials. Based on well-established Plansee refractory metals (RM = W, WL, Mo) a range of new materials with Carbon...
In this work it is shown that laser annealing can be used for electrical activation of phosphorus implanted in extremely thin SOI structures. We characterized crystallinity, surface morphology, dopant diffusion and activation as a function of the laser energy density. It is evidenced that pulsed laser annealing (wavelength: 308 nm and pulse duration: 160 ns) allows the perfect crystal recovery of...
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