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The MIXDES 2013 International Conference “Mixed Design of Integrated Circuits and Systems” was a very special one. It has been 20 years since our first event in Dębe near Warsaw, when 42 people met together to discuss recent advances in VLSI design and technology. This year we have returned for the third time to the beautiful city of Gdynia - a symbol of rebirth of modern Poland after many years of...
We report a multi-physics simulation and layout design technique for integrated-MEMS (microelectromechanical systems) based on an electrical circuit simulator. A solver for the mechanical equation of motion has been programmed in a Verilog-A compatible HDL (hardware description language) within the Cadence Virtuoso environment to attain new designing capabilities including automatic mask layout synthesis,...
Continuous technology advancements have forced MOSFET architecture to evolve from bulk to SOI to multigate MOSFETs. BSIM compact models have helped circuit designers to realize their designs first time correct using accurate physical models used in SPICE simulation. BSIM3 and BSIM4 are threshold voltage based bulk MOSFET models while BSIM6 is charge based bulk MOSFET model, which include physical...
Robustness of modern ICs during system assembly and normal operation requires that protection circuits are built-in to prevent damage to internal circuit elements due to Electrostatic Discharge events (ESD), which can inject substantial energy into the chip. ESD protection as well as protection against other damaging events, such as latchup, is highly dependent on chip architecture and circuit design,...
This paper introduces the application of compact modeling for the automatic design of RF/analog wireless communications building blocks. The need for attaining ever more stringent specifications makes imperious the use of optimization-based techniques. Market competiveness makes design time a major concern, rendering analytical based optimization methodologies a preferable solution to be adopted....
The continuous progress in power device and microsystems technology is increasingly supported by problem-specific modeling methodologies and dedicated simulation tools. These do not only enable the visualization of fabrication processes and operational principles, but also the detailed analysis of the device and system operation of competing design variants in a very early stage of the development...
In this paper, we start with a review of the basics in the drift-diffusion (DD) and quasi-ballistic (QB) formalisms in the context of field-effect transistor (FET) compact modeling (CM). In general, analytic CMs are derived with simplifying approximations, and they are validated with the corresponding theories by numerical simulations; e.g., by numerically solving the Shockley DD equations or coupled...
The state-of-the-art scaled down CMOS processes have led to devices with extremely high Ft reaching several hundreds of GHz. This high Ft can be traded with power consumption by moving the operating point towards weak inversion with Ft reaching tens of GHz, high enough for many modern RF applications. The new charge-based bulk compact MOSFET model BSIM6 was developed with the objective to provide...
Qucs and QucsStudio open source circuit simulators have a wealth of built in swept data features, including facilities for linear and logarithmic scans of simulation variables and for setting component values and device parameters. These simulators also allow semicolon separated lists of numerical values to be used as swept data. This little known feature provides a very flexible mechanism for generating...
In this paper an approach to analysis of responsivity of MOSFET-based detectors of THz radiation has been presented. The author has analyzed the substrate modes that affect performance of antennas that are always used as a part of detecting structures, and should be accounted for by proper choice of the substrate geometry. Then, a methodology to combine extracted properties of an arbitrary antenna...
A 2D physics-based model for short-channel junctionless double gate (DG) MOSFETs is presented. From a closed-form solution for the 2D potential we derive explicit equations for the calculation of threshold voltage VT and subthreshold slope S. A unified charge model valid for all operating regimes is developed by using Lambert's W-function, and a standard smoothing function for the transition between...
In the last few years the Tunnel-FET has become one of the promising devices to be the successor of the MOSFET due to its CMOS compatibility and steep subthreshold slopes (S) below 60 mV over dec. In this paper a 2D physics-based analytical model for Tunnel-FETs is introduced. It predicts a 2D band-to-band tunneling probability calculation through Wentzel-Kramers-Brillouin approximation (WKB) based...
The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for...
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