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We report on the design and measurements of a prototype integrated circuit structure implemented in CMOS 180 nm technology and dedicated for readout of silicon pixel detectors. The prototype structure contains 16 channels, which are built of a charge sensitive amplifier and a main amplifier stage. We present both, the design procedure of the readout front-end electronics based on an inverter amplifier...
In the paper the measuring system, elaborated by the authors, for determining thermal parameters of semiconductor devices with the use of electrical methods, is presented. The concept of operation of the system and a sample circuit solution dedicated for measurements of diodes are described. Correctness of the system's operation was verified by comparing the results of transient thermal impedance...
In the paper the dc measurement method of thermal resistance of the IGBT is presented. The possibilities of selection of a thermally sensitive parameter and a manner of realization of the method are discussed. The correctness of the presented method was verified with the use of infrared measurements. The influence of the selected factors on the measurement error of the thermal resistance is analyzed.
This paper presents the effect SOI detector's bias voltage has on current-voltage characteristics of different types of transistors (core transistors, io transistors, body floating, sourcetie, body-tie, low/normal/high threshold voltage). Methods of minimizing this effect were presented. Also, the I–V characteristic of transistors utilizing shielding layer (BPW - buried P Well) were measured and presented...
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