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The state-of-the-art scaled down CMOS processes have led to devices with extremely high Ft reaching several hundreds of GHz. This high Ft can be traded with power consumption by moving the operating point towards weak inversion with Ft reaching tens of GHz, high enough for many modern RF applications. The new charge-based bulk compact MOSFET model BSIM6 was developed with the objective to provide...
Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
Currently electro-thermal simulations performed with 3D FEM simulators like ANSYS or COMSOL Multiphysics are limited to an imposed current flow through resistive materials. However, in the case of power MOS gated transistors like VDMOS transistors or IGBT, the channel resistance evolves with the gate voltage. This phenomenon is usually neglected in ON-state applications but seems to be determinant...
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