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In this paper we present a compact model for AlxGa1−xN/GaN High Electron Mobility Transistors (HEMTs) developed for circuit simulation of power transistors. A physical approach is followed and drain current and intrinsic node charges are calculated using the surface-potential formalism. The HSP model (acronym for HEMT Surface-Potential model) presented here includes: dependence on the aluminum content...
VES-BJT is a bipolar transistor fabricated in the VESTIC technology. Its physical structure differs from other state-of-the-art bipolar transistors: its emitter and collector junctions are not plane-parallel, its base is uniformly doped and the emitter and collector regions are identical. In this paper it is shown how to estimate theoretically the most important parameters of its compact model. Comparison...
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