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This paper presents a quadrature pulse-position modulation (Q-PPM) impulse radio (IR) system, and its novel transceiver architecture for E-band wireless communications. In the Q-PPM IR system, the wavelet of the transmitted signal is time-shifted by multiples of 3 ps from the periodic base position. This paper focuses on the receiver architecture for demodulation of the Q-PPM IR signal. The principle...
A millimeter-wave linear fast-chirp pulse generator for a pulse compression radar system has been developed. It was designed and implemented in 65-nm CMOS technology. The linear and fast chirp pulse generation was demonstrated with the maximum frequency chirp rate of 0.96 GHz/us, representing to the authors' knowledge the highest rate reported to date for millimeter-wave radar systems. It was achieved...
In this paper, a 65-nm CMOS amplifier MMIC operating around 265 GHz is presented. To obtain a small signal gain of the amplifier in a frequency region close to Fmax (Maximum oscillation frequency) of a transistor, a neutralization technique of a feedback capacitance as well as a transistor model to neutralize it precisely are needed. For this purpose, the key is a de-embedding technique. To extract...
Bump-shaped vertically aligned multi-walled carbon nanotubes (MWNTs) were bonded to a Au substrate by a surface activated bonding method using Ar fast atom bombardment (FAB). After carrying out Ar-FAB for 1200s at a bonding load of 0.74MPa, the interconnect resistance reduced to 1/1000 of the original resistance. The lowest resistance of 5.2Ω was achieved for the bonded specimens. Torn graphite layers...
This paper describes the implementation of 76–81 GHz power amplifier (PA) in 65 nm CMOS technology. A customized transistor model enables the designing circuits operating at mm-wave band. The output matching of the PA was composed of low-pass network to reduce both footprint and matching loss. This makes the PA ideal for phased array radars. The measured results at 79 GHz achieved the small signal...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VA-CNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VA-CNT bumps under compression pressure were studied. The resistance of the bonded VA-CNT bumps with load was decreased under compression pressure. In this model, it is considered that the VA-CNTs were deformed permanently by the friction...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VACNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VACNT bumps under compression pressure were studied. In this model, it is considered that the VACNTs were deformed permanently by the friction among the VACNTs. In order to solve the cause of the permanent deformation of the VACNT bumps,...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (CNTs) were bonded to Au substrate as multilayer interconnect. In order to lower interconnect resistance between the CNT bumps and the Au substrate, the CNT bumps were covered with Au layer by Ar magnetron sputter, subsequently the CNT bumps and the Au substrates were bonded by surface activated bonding using Ar plasma...
ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μFE ∼ 10 cm2 (Vs)−1], Ion/Ioff ratio of ∼108, and excellent...
This study demonstrated the first application of a Si microchannel cooler integrated with bump structures to apply as a new thermal management device for the high power amplifiers (HPAs). The structure consists of an HPA chip, Si bumps, and a Si microchannel cooler. The fine pitch Si bumps with metal coating are directly connected to the electrodes close to the active areas of AlGaN/GaN HEMT HPAs...
In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 µm diameter and around 200 µm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load...
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