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High frequency printed circuit board (PCB) laminates are receiving increased attention due to applications in the K/Ka and Q/V bands. As a result, the extraction of electrical properties for the applications in these bands is increasingly important. Material properties at 60GHz, 77GHz, and 81GHz were extracted for four glass reinforced thermoset and one polytetraflouroethylene (PTFE) material. The...
In this paper, a glob-top packaging solution using thermally conductive adhesive Polytec TC 430-T is demonstrated which can be adapted for mass production using standard assembly effort. The packaging concept is first tested on two dummy chips connected by λ/2 wirebonds. Thereafter, the packaging concept is implemented on a 122 GHz wirebond based Antenna-in-Package (AiP). The off-chip circuitry of...
The performance of a 6.5 GHz hybrid GaN Doherty power amplifier is reported. The amplifier is packaged in a plastic overmold QFN 9×9 package and includes discrete GaN transistors and integrated passive GaAs splitting, matching and combiner networks. Measured results, under continuous wave operation, at 6.5 GHz shows 18 dB gain, a P1dB of 42 dBm, and 21% PAE in 9 dB output power back off. These results...
We present a photonic BiCMOS process enabling for monolithically integrated Si-based transceiver front-ends towards single-wavelength 400 Gb/s data rate by combining segmented Mach-Zehnder-Interferometer modulators and high-speed germanium photo detectors with high-performance electronics.
This paper presents the design, the realization and the measurement of a thin-film packaged RF-MEMS switched capacitors. Packaging is included in microelectronics fabrication process, with Silicon Nitride thin film. The capacitors are actuated by deflecting thin gold metal membrane towards the package dielectric, increasing the capacitance by a factor 2.47. The device size, including its packaging,...
This paper describes the development of a DC (0Hz) to over 26GHz (K-Band), ultra-long on lifetime single pole dual throw (SPDT) micro-electro-mechanical systems (MEMS) switch with integrated driver circuitry. This paper reports for the first time a novel active (electrostatic) open design that guarantees a greater than 10 years continuously on lifetime (COL) at 85°C, as well as a minimum actuation...
This paper presents a wafer level packaged (WLP) RF-MEMS switch fabricated in a 0.13 μm SiGe BiCMOS process technology for D-Band (110–170 GHz) applications. For the wafer level packaging, thin film encapsulation approach is developed and used during the Back-End-of-Line (BEOL) fabrication process. The fabricated wafer level encapsulated (WLE) RF-MEMS switch provides a high capacitance Con/Coff ratio...
The opto-electronic oscillator (OEO) is an oscillator with an optical delay line as a resonator. The fact that the increase in frequency of an OEO does not increase its phase noise is an important advantage. This enables the generation of low phase-noise signals in the microwave and millimeter wave regions. However, for its more widespread use two problems must be dealt with: frequency drift and multi-mode...
A GaN-HEMT-based laser driver circuit is presented which can switch 30 A of current with a minimum pulse width of 580 ps. The pulse width can be varied electronically. Its maximum depends only on the value of the storage capacitor. This demonstrates the potential of GaN transistors also for high-speed high-current applications at low voltages. The driver is integrated together with the laser diode...
This paper presents a novel structure for realizing high-Q tunable combline filters using RF MEMS switches. The design employs planar circuits loaded with RF MEMS switches integrated strategically inside the combline filter structure. The advantage of the proposed structure is that the MEMS switches do not need to be connected to lumped element capacitors which are known to degrade the loaded Q of...
This paper presents the campaign for the characterization of a GaN packaged power transistor, with the aim to test the foundry model accuracy in a non-conventional mode of operation. In particular, the device is adopted for the design of a 30 W, 435 MHz class E power amplifier to be inserted in a radio-frequency pulse-width-modulator for space application. Due to the biasing class of operation (class...
A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias...
This paper analyzes the requirements for solid-state devices to replace vacuum tubes in radar systems and introduces a 700 W GaN transistor operating at 150 V at UHF frequencies with 80% drain efficiency. The signal during the RF tests employed 52 μs and 100 μs pulse width with a duty cycle ranging from 2% to 5% and 10% at a frequency of 430 MHz. Although the prototype transistor presented in this...
Transient thermal characterization by thermal imaging in our earlier work demonstrated its ability to extract key information about the thermal response of transistors under operating conditions. We investigate a non-equilibrium response to a short time pulse for very high frequency devices, e.g. hetero-junction bipolar transistors (HBTs). Characterizing high speed thermal signals from devices with...
We report a multiband Envelope-Tracking (ET) Power Amplifier (PA), comprising a very broadband RF-PA stage and a Voltage-Mode class-D (VMCD) buck-converter with 200MHz switching frequency. Both buck-converter and RF-PA were fabricated using a GaN HEMT process. High frequency switching operation of the buck-converter makes it possible to handle broadband signals (20MHz bandwidth). The design of the...
This paper presents a non-invasive Power Detector (PD) fully integrated with a 5.8GHz differential Power Amplifier (PA). A symmetrical balun provides the differential to single-ended transformation, while presenting the optimal load to the PA. The PD is connected to a sense circuit placed within the output network of the PA. This sensor consists of a third coil added in the center of the output balun...
We have investigated the efficiency and distortion behavior of an envelope tracking (ET) power amplifier (PA) according to the idle current. A two-stage PA is implemented using an InGaP/GaAs heterojunction bipolar transistor process and only the collector bias voltage of the power stage of the PA is modulated by a supply modulator. The gain of the power stage is decreased due to the saturated operation...
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