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Bump-shaped vertically aligned multi-walled carbon nanotubes (MWNTs) were bonded to a Au substrate by a surface activated bonding method using Ar fast atom bombardment (FAB). After carrying out Ar-FAB for 1200s at a bonding load of 0.74MPa, the interconnect resistance reduced to 1/1000 of the original resistance. The lowest resistance of 5.2Ω was achieved for the bonded specimens. Torn graphite layers...
We propose a novel integrated antenna module based on fan-out wafer level package (FO-WLP) for terahertz applications. A patch structure is employed for an antenna since it is suited for low height module. Both an insulator made of polyphenylene ether (PPE) and a reflector made of copper block, together with a chip for high frequency operation, were embedded into a mold used for FO-WLP. A driven element...
This paper presents a new millimeter-wave module concept, which is an integration of CMOS monolithic microwave integrated circuits (MMICs) and passive devices fabricated using a redistribution layer (RDL) technology. To realize a low-loss passive circuit, we introduced a multi-metal-layer for the RDL. The first metal layer was used as ground to shield from substrates. The upper metal layers form passive...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VA-CNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VA-CNT bumps under compression pressure were studied. The resistance of the bonded VA-CNT bumps with load was decreased under compression pressure. In this model, it is considered that the VA-CNTs were deformed permanently by the friction...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (VACNTs) were bonded to Au substrate as flip-chip interconnect, and the behaviors of the VACNT bumps under compression pressure were studied. In this model, it is considered that the VACNTs were deformed permanently by the friction among the VACNTs. In order to solve the cause of the permanent deformation of the VACNT bumps,...
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (CNTs) were bonded to Au substrate as multilayer interconnect. In order to lower interconnect resistance between the CNT bumps and the Au substrate, the CNT bumps were covered with Au layer by Ar magnetron sputter, subsequently the CNT bumps and the Au substrates were bonded by surface activated bonding using Ar plasma...
This paper presents a 77-GHz band high-power CMOS amplifier module. In an effort to integrate MMIC with low-loss passive circuits, multi-layered redistribution layer (RDL) technology has been installed. Passive circuits made using RDL technology and 65-nm CMOS circuits are enabling breakthrough approaches for millimeter wave applications. Low-loss passive circuits using RDL technology was fabricated...
This paper presents a 77-GHz band high-power CMOS amplifier module. In an effort to integrate MMIC with low-loss passive circuits, multi-layered redistribution layer (RDL) technology has been installed. Passive circuits made using RDL technology and 65-nm CMOS circuits are enabling breakthrough approaches for millimeter wave applications. Low-loss passive circuits using RDL technology was fabricated...
In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 µm diameter and around 200 µm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load...
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