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In this work, we demonstrate a new concept for realizing high threshold voltage (Vth) E-mode GaN power devices with high maximum drain current (ID, max). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of Vth. The E-mode GaN MIS-HEMTs with high Vth of 6 V shows ID, max 720 mA/mm. The breakdown voltage is above 1100 V.
The progress of the electronics has been conducted by the downsizing of electron devices for more than 100 years since its beginning in early 20th century. However, it is believed now that the downsizing will reach its limit within a few to several years because of several sure reasons. After reaching the limit there is no Moore's law, and we cannot expect such a tremendous progress in cost, performance...
The progress of the electronics has been conducted until today by the downsizing of devices for more than 100 year since its beginning in early 20th century. However, it is believed now that the downsizing will reach its limit in several years because of several sure reasons. After reaching the limit, we cannot expect such a big progress as the past for electron devices in terms of cost, performance...
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits has been conducted. Rare earth oxides have relatively higher dielectric constants and are suitable as gate dielectrics. Two-dimensional device simulations reveal that the desirable dielectric constant, without affecting the short-channel performance, is less than 50. The dielectric constant...
A novel antenna array with over 120 degree coverage in the azimuth plane based on a conformal waveguide is proposed. The 8×8 element array with directivity gain of 15.7dBi at 79GHz is designed and confirmed that the side lobe level by using switching method can be suppressed over 5dB compared to a linear array with 8 branch.
High-k gate dielectric integration had been one of the key technological boosters for 45 nm CMOS technology and beyond. Just a couple technology nodes after adopting the hafnium-based high-k materials, the high-k scaling have already lost its momentum. It is anticipated that the EOT scaling will be in the rate less than 0.03 nm reduction/generation in coming technology nodes. Putting aside the fabrication...
In this paper, we propose and design a coaxial-line fed slot array with a waveguide-to-coaxial transition using a crank-shaped slot. We analyze the 8×8-element trapezoidal array with the designed transition. The bandwidth for VSWR less than 1.5 is 2.1% in the waveguide for boresight radiation and 2.0% in the waveguide for tilted radiation from 77 to 81 GHz.
The effects of thermal annealing on the interface reactions and bonding structures of CeO2/La2O3 stacked dielectrics are investigated by x-ray photoelectron spectroscopy (XPS) measurements. We found that the thermal treatment can lead to significant interface oxidation and silicate formation both in the bulk and at the interface. Sample with 600 °C annealing exhibits some better interface properties...
An analytical model on the potential distribution and drain current characteristics for double gate p-n-i-n tunnel field-effect- transistor (TFET) is developed. In this model, the effect of channel inversion charge was taken into account and potential distribution was approximated by dividing the source, drain and channel regions into several parts so as to facilitate the analytical solution to the...
This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated...
This work reports the observation of abnormally large off-state currents in silicon nanowire transistors with gate length less than 2.5 μm. As the gate lengths as well as the source/drain doping level were well beyond the punchthrough conditions, we ascribed this observation to the charge transport along the corners/boundaries of the nanowires. Temperature dependent characteristics were also investigated...
Progress of ICT (Information and Communication Technology) made our society ‘smart’ and convenient. Already, internet, SNS, smart phones, IoT, and big data analysis are available. In near future full-automatic automobile drive will become possible, and even some people expected that the artificial intelligence will exceed the human brain ability 30 years from now. In anyhow our society will be revolutionarily...
Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6–460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic...
Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide...
Although Si MOS devices have dominated the integrated circuit applications over the four decades, it has been anticipated that the development of CMOS would reach its limits after the next decade because of the difficulties in the technologies for further downscaling and also because of some fundamental limits of MOSFETs. However, there have been no promising candidates yet, which can replace Si MOSFETs...
Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron...
Although silicon-based CMOS devices have dominated the integrated circuit applications over the past few decades, it is expected that the development of CMOS would reach its limits after the next decade because of the difficulties in downsizing and also some fundamental limits of MOSFETs. However, there are no promising candidates which can replace CMOS with better performance and high-density integration...
This paper presents an indoor experiment to verify the battery-less sensor activation via multi-point wireless energy transmission with carrier shift diversity which realizes seamless coverage extension of the sensor activation. The multi-point scheme is employed to overcome path-loss attenuation. The carrier shift diversity has been developed to achieve uniform coverage of power transmission by combating...
In this paper, first we have demonstrated the suitability of Plackett-Burman Design of Experiment (PB-DOE) method for the sensitivity analysis of a device and a circuit performance to inter- and intra-die process variations. Further, it is shown that PB-DOE method takes relatively less computational time and provides reasonable accuracy as compared to standard Monte Carlo Method. In the next part...
La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm−2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm−1 was found. We speculate that relaxation of SiO4 networks in Lasilicates results in low Dit.
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