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This work demonstrates an innovative adaptive cooling approach which greatly reduces thermo-mechanical stress and degradation in power modules during operation, enabling the achievement of improved lifetime/reliability figures. That is achieved by monitoring the actual load conditions (i.e., the power losses in the modules) and ambient temperature value to adapt the cooling conditions continuously...
A novel packaging structure for high-speed switching silicon carbide (SiC) power modules has been proposed based on antiparalleled phase leg units. A prototype 1200 V-360 A SiC power module is developed using SiC-MOSFETs and SiC-SBDs and the very low parasitic inductance of 3.8 nH has been achieved. The experimental results show that the ultra-fast switching can be available owing to the very low...
Substrate coupling is a critical failure mechanism especially in fast-switching integrated power stages controlling high-side NMOS power FETs. The parasitic coupling across the substrate in integrated power stages at rise times of up to 500ps and input voltages of up to 40V is investigated in this paper. The coupling has been studied for the power stage of an integrated buck converter. In particular,...
In this work, we introduce a high-voltage, full-SiC power module based on SiC junction field effect transistors (JFETs) and schottky barrier diodes (SBDs). The process development and fabrication of 4kV SiC JFETs and SBDs are first introduced and a 3500V/15A full-SiC power module which is fabricated with self-fabricated devices is presented. The power module is also evaluated in a high frequency boost...
Thermal stability is mandatory for the application of power semiconductor devices. Thermal runaway as a consequence of the feedback loop of increasing temperature and increasing leakage current is one risk, especially for Schottky-diodes featuring particular blocking characteristics. In this work the blocking characteristics of modern SiC-Schottky diodes including MPS and JBS types were measured and...
Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection which effectively releases trapped electrons at around drain region after the application of high drain voltages. The p-GaN region is electrically connected...
A SOI-LIGBT with Segmented Trenches in the Anode region (STA-LIGBT) is proposed and compared with the separated shorted-anode LIGBT (SSA-LIGBT) for the first time. The proposed STA-LIGBT structure features that there are segmented trenches located between the P+ anode and the segmented N+ anodes. By employing the segmented trenches, the resistance between the P+ anode and the shorted N+ anode is significantly...
Using an advanced thin wafer technology, we have successfully fabricated the next generation 650V class IGBT with an improved SOA and maintaining the narrow distribution of the electrical characteristics for industrial applications. The applied techniques were the finer pattern transistor cell, the thin wafer process and the optimized back side doping concentration profiles. With the well organized...
A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such...
The interface trap generation under Vgmax HCI stresses in pLDMOSFETs has been studied using non-destructive multi-region direct-current current-voltage (MR-DCIV) technique. Several times larger MR-DCIV degradation per finger was observed for multi-finger devices. Folded-gate layout device suffered more self-heating induced degradation. Our study results reveal that those effects shared the similar...
We present a physical model for hot-carrier degradation (HCD) which is based on the information provided by the carrier energy distribution function. In the first version of our model the distribution function is obtained as the exact solution of the Boltzmann transport equation, while in the second one we employ the simplified drift-diffusion scheme. Both versions of the model are validated against...
Lower losses and higher performance levels at elevated junction temperatures require fabrication processes enabling full design-flexibility for the IGBT buffer and anode to meet application requirements for the ≤1.7kV voltage-range. Here we present the bonded wafer concept that is enabling high thermal stability and soft and high turn-off capability due to full design flexibility for the critical...
A novel gate driver for the control of 1200V IGBT switches in Three-Level Neutral Point Clamp (3L-NPC) half bridges based on high voltage silicon on insulator (SOI) technology is presented. The driver features a safety concept dedicated for 3L-NPC applications. The three dies of this multichip solution are assembled in a tiny cost effective IC package with excellent electrical and thermal properties...
In this paper a fully isolated bulk Si RF LDMOS device platform is reported which has been optimized for highly efficient mobile power conversion and RF power amplification. The self-aligned RF LDMOS NFET achieves a specific on-resistance Rds, on of 0.94 ohm-mm2, a breakdown voltage >9V, an Rsp∗Qgg product of 8.3 mohm nC, and a cutoff frequency Ft > 43 GHz. Complementary PFET RF LDMOS exhibit...
This work proposes the design and assembly of a very low inductance half-bridge power switch. It uses latest generation Infineon Technologies® 70μm thin IGBTs and diodes rated at 600 V/175 °C. The integration relies on state-of-the-art ceramic substrate technology, featuring double-etched patterned copper tracks enabling a fully bond-wire-less interconnection scheme; through-hole conducting viases...
This paper describes the trends and opportunities in IGBT intelligent power modules (IGBT-IPM) for industrial and automotive applications. After the 1st generation IPM was released to the market in late 1980's, continuous technical challenges have pushed them higher performance as well as higher power density. The progresses in IPMs have been done with combination of: 1) Special IGBT chip development,...
Conventional BCD and high voltage technologies are developed with extra masks and additional thermal drive-in process units included in existing LV platforms. The technology development is time-consuming and the turnaround time for the whole process takes longer. In this paper, a low cost solution with a set of layout design methodology is proposed to accomplish the embedded power BCD technology in...
A high breakdown voltage (BV) thin SOI LDMOS with ultralow specific on-resistance is proposed and its mechanism is investigated. The LDMOS features an accumulation-mode extended gate (AEG) structure on the surface that consists of a P- region and two diodes in series. In the on-state, an electron accumulation layer is formed at the drift region surface and provides an ultralow resistance current path,...
In this paper, a low substrate loss, monolithically integrated power inductor for compact LED drivers is designed and experimentally demonstrated. A 5.2 μH inductor is embedded at the backside of the silicon substrate, and the low-k, insulating material SU-8 is used to reduce the substrate loss. The inductor achieves a DC resistance of 2.3 Ω and a peak Q factor of 22 at 3.4 MHz. The inductor, controller,...
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