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This paper presents an adaptive clocking control circuit to mitigate the processor performance degradation due to on-die supply voltage droops. The circuit utilizes multi-path TDC to reduce quantization errors and thermometer code-based data processing to eliminate latches, which shortens frequency modulation latency. This results in faster frequency/supply tracking. A test chip including the adaptive...
A novel BSC circuit with tunable current starved buffers demonstrates higher sensitivity, scalability & accurate statistical characterization of radiation-induced SET pulse waveforms & flip-flop SER in 14nm tri-gate CMOS, thus enabling improved SER estimation & analysis for a range of supply voltages including NTV.
Progressive impacts of aging on Fmax & noise margin of the precharge-evaluate domino read, and VMIN for differential static write & retention are demonstrated via statistical measurements over the operational lifetime of a 14KB 1R1W 8T SRAM array in 22nm high-k/metal-gate tri-gate CMOS.
To optimize the classic design trade-off between EMI noise and power efficiency in GaN power drivers at 10MHz and beyond, a closed-loop adaptive Miller Plateau sensing (AMPS) technique is proposed. In order to mitigate long delays and low accuracy issues in conventional Miller Plateau (MP) sensing approaches, an emulated MP tracking (EMPT) technique is adopted to achieve instant MP start point sensing...
A fully integrated digitally controlled buck VR, featuring hysteretic and PFM control for maximum light load efficiency, with 3D-TSV based on-die solenoid inductor with backside planar magnetic core in 14nm tri-gate CMOS demonstrates 111 nH/mm2 inductance density & 80% conversion efficiency.
A 6Gb/s 9.8pJ/b rotatable non-contact connector applicable to robot arms is developed. The proposed rotatable transmission line coupler (RTLC) has a wide bandwidth at all rotation angles. An interface bridge IC is also developed to transfer a wide range of interface signals from slow legacy ones to high-speed ones. The proposed system improves power efficiency by a factor of 3.7, space efficiency...
A micro-bolometer focal plane array (MBFPA)-based long wavelength Infra-red thermal imaging sensor is presented. The proposed multiple digital correlated double sampling (MD-CDS) readout method employing newly designed reference-cell greatly reduces PVT variation-induced fixed pattern noise (FPN) and as a result features much relaxed calibration process, easier TEC-less operation and Shutter-less...
A 65-nm Silicon-on-Thin-Box (SOTB) embedded SRAM is demonstrated. By using back-bias (BB) control in the sleep mode, 13.72 nW/Mbit ultra-low standby power is observed, which is reduced to 1/1000 compared to the normal standby mode. The measured read access time with forward BB is 1.84 ns at 1.0 V overdrive and 25°C, which is improved by 60% and thus we achieved over 380 MHz operation. Up to 20% active...
Everybody getting excited with the 5G, mixing cats and dogs together. But the reality is, there is physical limitations and no magic, we should cool down. Whereas a lot would get to be possible and that should not be under estimated, and we should know what would be possible and what would not. Industry experts should be able to figure out better images before it actually comes, so as not to make...
As IoT moves beyond a catchphrase and starts to provide meaningful solutions in multiple fields, three of its critical pillars are now well understood: • Transducers are needed as means of interacting with the environment and machines, and in converting stimuli to data and vice versa. These sensors and actuators form the basis of contextual awareness. • Given that many end-node IoT devices are size...
Current stand-alone memory technologies for high density data storage are still based on electron-based principles that were established in the 1960s. While high bandwidth memories close to the CPU are still based on the 1T1C DRAM cell [1], also the nonvolatile space is still dominated by floating gate and charge trap concepts [2,3]. Meanwhile we have seen a major shift in the latter type, since Flash...
Embedded memories play an important role to enable applications for mobile, IoT, security and high performance computing. In this paper, we presented the SRAM and non-volatile memories for different applications.
For the first time, a 40nm-node, 2x logic density, 3.8x operation speed, and 3x power efficient, nonvolatile programmable logic (NPL) is demonstrated by using Cu atom switch for configuration switches. The switching characteristics of the atom switch are kept in scaling down to 64/32nm device area, and an improved PSE reduces set voltage while keeping low leakage current, enabling core transistors...
This paper demonstrates a cross point Cu based Resistive Random Access Memory (Cu-ReRAM) technology suitable for Storage Class Memory (SCM) applications. Two key technologies have been developed for large capacity of 100Gb-class SCM with 100 ns program speed and 10M cycles of program endurance. One is tight resistance distributions of Cu-ReRAM by inserting a barrier layer to prevent excess intermixing...
We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In0.80Ga0.20As (ND ∼ 1×1019 cm−3) as both channel and contacts. Devices with source and drain metal separation of 32 nm and Lg of 25 nm exhibit SS = 76 mV/dec., both the highest reported gm = 1.6 mS/μΑ and Ion = 160 μA/μm (VDD = 0.5 V, IOFF = 100 nA/μm) for a junctionless transistor. We also examine the influence of the...
We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68...
In this paper, we demonstrate for the first time an implant free In0.53Ga0.47As n-MOSFET that meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (μeff, peak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1nm EOT without loss of performance,...
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