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A novel flexible Film Bulk Acoustic Wave Resonators (FBARs) based on ZnO/PET structure was fabricated without back-etch. The PET layer is applied as acoustic reflector and substrate of FBAR. It has 1.14GHz parallel resonant frequency, 1.229GHz series resonant frequency and about 150 Q factors. The FBARs acoustic impedance is improved by using harden metal Au instead of Al as the bottom electrodes...
Degradation of the transfer characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) is investigated under visible light illumination (wavelength of 455, 526 and 638nm) and gate bias stress (Vg=±20V, Vd=0). Negative shift of the threshold voltage (Vth) under 455nm illumination is attributed to ionized vacancy creation in a-IGZO film. We find that deep acceptor-like traps are created...
A novel approach is proposed for in-plane acceleration measurement using a novel clamped-beam structure as the sensing element. The working principle depends on the axially deformation of the sensing beam in the best location induced by in-plane acceleration. Theoretical analysis and finite element method simulations are employed to research the performance. The results demonstrate the feasibility...
TiN/HfO2/Pt resistive switching (RS) devices were fabricated with TiN top electrodes deposited in various Ar:N2 ambient. Strong relevance between ambient Ar:N2 ratio and electrical performance was demonstrated. This correlation was attributed to the difference in TiN crystal orientation, which has strong dependence on and can be controlled by ambient Ar:N2 ratio during deposition. Electrical measurement...
A small molecular dye 2,4-bis[4-(N,N-diisobut ylamino)-2,6-dihydroxyphenyl] squaraine (SQ) was used as additive to fabricate inverted polymer solar cells (PSCs) with poly-3 (hexylthiophene) (P3HT) and and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM), and the influence of of SQ doping ratio on the PSCs performance was studied. The power conversion efficiency (PCE) can be improved from 2.99 %...
The total dose dependence of hot carrier injection (HCI) effect in the 0.35µm NMOS Devices was studied in this paper. It was indicated that the threshold voltage shift of NMOS devices with HCI test after 100krad (Si) total dose radiation was more than the devices without radiation. It was related to irradiation annealing effect and hot electrons being trapped by irradiation interface traps.
This paper presents a wide tuning range ring voltage-controlled oscillator (VCO) with low phase noise. This design has successfully expanded the linear tuning range of VCO with a novel delay cell architecture. To improve the high frequency performance, the negative delay technology is introduced. The VCO is implemented in 90-nm CMOS with 1.2 V supply voltage. And the post layout simulation results...
A current-mode active-RC filter is presented in this paper. With the center frequency of 2MHz and bandwidth 1.6MHz,the filter is a 3rd order complex band-pass filter. A fully differential current amplifier (FDCA) based on second-generation current conveyor (CCII) is introduced. Furthermore, programmable capacitor array and adjustable DC bias are used to help tuning the filter. The filter is designed...
Radio frequency identification (RFID) applications with large tag populations often require the fast identification of the tags present. This paper applies a spread-spectrum technique and adds some new functions based on 18000-6C protocol, so that a RFID tag can transmit the unique spreading code which can be configured by reader for code division multiple access (CDMA). Therefore, an UHF-RFID reader...
This paper presents a novel calibration method for an all-digital burst-mode clock and data recovery (BM-CDR) with embedded time-to-digital converter (TDC). The proposed method ensures the TDC-embedded Phase Generator to get the precise delays outside of Shared Delay Line, which makes the measured period more exactly. This method operates at 1.25Gbps. Compared with the BM-CDR without calibration,...
A 700 V self-ISO (isolated) DB-nLDMOS (dual P-buried-layer nLDMOS) without epitaxy is proposed in this paper. By separately implanting deep junction NWELLs, drift region of low doping concentration in neck region is achieved. This alleviates the concentration of the electric field and avoids premature avalanche breakdown around the bird's beak. Furthermore, introduction of triple RESURF (reduce surface...
Hot-Carrier-Induced linear region drain current degradation is investigated to understand dependence of new parameters Lsub and Lw using LDMOS transistor in 0.18 µm standard CMOS logic process. Results and TCAD simulation show critical role in design rule of those parameters and their optimization.
A high-performance and flexible fiber-shaped supercapacitor (FSC) with organic-inorganic hybrid structure was fabricated. After adding a thin layer of conductive polymer polyaniline (PANI) as both active material and electron transport path on the manganese oxide (MnO2)-coated carbon fiber thread (CFT) electrode, the capacitance of the electrode was increased by 2530 %. These CFT-MnO2-PANI hybrid...
High temperature reverse bias (HTRB) stress experiments were carried out on industrial GaN HEMTs. Several degradation characteristics of DC parameters such as drain current degradation, transconductance reduction, and threshold voltage shift were identified. It was interesting that the devices showed a considerable decrease in gate leakage current after HTRB stress. The results showed that conventional...
This paper presents a multi-phase clock generator with high resolution based on DLL. By employing the static phase error, fine tuning step is achieved with the simplest DLL structure. The charging current and discharging current of charge pump (CP) are set to be unequal to get static phase error. The simulation results show the delay step resolution of the generator with 400MHz input is 5ps and the...
Along with the infrared technical rapid development, infrared radiation (IR) thermal imaging technology is widely applied in device and circuit reliability research. For device and circuit reliability study, IR thermal imaging technology is best for getting the peak temperature and temperature distribution. With the peak temperature and temperature distribution, the thermal information of the devices...
This paper presents a clock and data recovery (CDR) delay locked loop that operates in high frequency while keeping low jitter performance. The data rate can be twice the reference clock frequency. A self-starting-control circuit widens the phase capture range. In order to compensate for the attenuation of channel, an equalizer comprised of two peaking amplifiers is employed in front end of CDR. The...
For the purpose of boosting the performance of MOS devices, applying mechanical stresses to change the semiconductor's band structure as well as to modulate the conduction mass is an effective and promising approach besides continuing to shrink the critical dimension of the devices. As a result of the stress impact on channel depends upon the layout-induced changes in topography of devices, it is...
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