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InGaAs/InAlAs quantum well infrared photodetectors have been investigated as a function of doping level. It is shown that depending on the figure of merit to be optimized a different doping level is required.
In this paper, we present a process for thin film MIP coating based on commercial nucleotides Adenosine Mono Phosphate (AMP). The compatibility of the MIP film with acoustic propagation and the sensor sensitivity for the rebinding of AMP has been verified. Thin and porous layers of AMP-based MIP layers were successfully deposited on the sensor surface. Detection tests of AMP have been performed in...
The overall objective of this work is to develop and to validate a quantitative, non-invasive diagnosis tool to monitor the efficiency of colorectal cancer chemotherapy. This paper deals with the validation of a molecularly imprinted polymer (MIP) thin film's coating process, allowing high sensitivity of the resulting microsensor. After description of the Love wave sensor and of the MIP coating process,...
This paper presents an analysis of the substrate influence on Ultra Thin Body and Box (UTBB) SOI nMOSFETs with and without Ground Plane (GP) implantation comparing experimental results, simulations and a simple analytical model. A good agreement is observed between experimental and simulation results at all back gate bias (VGB) conditions. However, the simple analytical model for the potential drop...
Silicon dioxide (SiO2) on Si layer with embedded Germanium (Ge) nanoparticles (nps) were made by Low Pressure Chemical Vapor Deposition (LPCVD). Atomic Force Microscopy (AFM) and Raman spectroscopy has been used to study the Ge distribution on SiO2 films as a function of the different temperatures of growth employed. Layers of Ge-nps at 12 nm-near to the Si/SiO2 interface were formed, where the best...
In this article we utilized the Lattice Boltzmann Method to study the behavior of nanofluids submitted to a temperature gradient. For this, we study the thermal square cavity problem with nanofluids, which are simulated considering a single phase, with the fluid characteristics altered by the presence of the nanoparticles.
This paper presents, for the first time in Latin America, a triple gate FinFET (also called 3D Transistor) fabrication process using only three lithograph steps. These three steps were done using electron beam lithography (EBL). The EBL allow the definition of the fin width and the transistor channel length without hard mask fabrication. This paper presents the main details about the full process...
Non-stoichiometric silicon oxy-nitride films were deposited by reactive sputtering. The compositions were obtained quantitatively by Rutherford Backscattering Spectroscopy. After deposition, the samples were thermally treated to activate the radiative transitions centers. The photoluminescence emission of the samples was measured using 266 nm and 488 nm lasers for excitation source. Transmission electron...
This paper presents an experimental analysis of channel length influence on the analog characteristics of asymmetric self-cascode association of SOI transistors. It is shown that the increase of the drain current and transconductance is more pronounced with the reduction of the length of the transistor close to the source (L1), and, differently from the symmetric self-cascode, suffers little influence...
The SBMicro symposium is an international forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices, held annually in Brazil. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. The SBMicro2013 will be located in Curitiba,...
Vertically aligned ZnO nanowire arrays were grown on Si substrates using the vapor-liquid-solid mechanism and ion microbeam lithography. Field emission experiments using the ZnO arrays were conducted in high-vacuum conditions. The samples presented relevant field emission behavior reaching emission currents up to 23 µA and turn-on electric field of ∼8Vµm−1. The non-linearity of the Fowler-Nordheim...
This paper presents experimental results and analyses of a resistive transducer, a photoresistor, with an Active-Pixel Sensor (APS) circuit, widely used in image sensors. The pixel circuit is equipped with a transfer-gate switch to keep the signal constant in the read node. This particular circuit-sensor configuration has not been found in the literature, and can be designed for applications with...
This paper aims to analyze the charges density in multiple gates junctionless devices with different dimensions‥ The analysis of the charge densities was done at the center of the silicon film, at the sidewall and at the top interfaces between the silicon and the gate oxide, for devices with different fin width, height and gate oxide tickness. Based on this analisys, the occurrence of corner effects...
We present the current status of the photonic integrated circuit design initiative at CTI, sponsored by the IC-Brazil program. We use a multi project wafer approach with open-source software for layout and fabless approach for the fabrication of silicon photonic devices. The institutional platform implemented to support photonic IC design is described and initial results for the design and fabricated...
Atomization of one or two microliter droplets of aqueous dispersion of graphene oxide (GO) by the surface acoustic wave (SAW) atomizer was used to deposit GO sensitive films of 15–30-nm thickness onto the surface of the SAW humidity sensor. Sensitivity of the sensors with these films as sensitive elements was calibrated over a wide range of humidity using a special procedure of preparation of standards,...
This paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve...
In this work we used a new approach for electrical contact improvement between multi-wall carbon nanotubes and metallic electrodes by localized laser heating. The nanotubes were suspended, using the dielectrophoresis technique, over a gap of 1µm width and 5µm depth connecting the ends of the patterned electrodes. Subsequently, the as deposited nanotubes were directly heated, in ambient atmosphere,...
An electrostatic Langmuir probe with self-compensation for use in 13.56 MHz RF-plasmas has been implemented and characterized. A compensating electrode, as well as an RF choke circuit is embedded within the probe body, and tuned to suppress the 13.56 MHz fundamental frequency. Comparing results with a bare probe without any compensating circuit are reported. The characteristic curve obtained from...
Electrical characterization of hafnium aluminates gate dielectrics, using capacitance-voltage (C-V) measurements, was carried out for different frequencies. The dielectric film was deposited with equal molar concentrations of aluminum and hafnium (AlHfO3.5) in order to analyze the influence of aluminum in the AlHfOy system at high concentrations. In addition, the AlHfO3.5 film was annealed at 1000°C...
In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more...
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