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High efficiency white LEDs are expected to take the place of conventional lamps for general lighting applications. High junction temperature is one of the key parameters that affects both electrical and optical properties. In this work, effects of phosphor distribution on junction temperature reduction is studied. The results showed that, if proper phosphor distribution is ensured so that they form...
In this work, we present the high frequency extraction of electrical material properties of silicon substrates. Two methods, including the substrate integrated waveguide (SIW) based method and the planar resonator based method, are used and their consistency will be shown. For the SIW-based method, a line difference algorithm is applied for the calculation of a broadband material property with the...
We propose a two-pronged approach to reducing the impact of thermal cross-talk between components of disparate thermal operating points within a heterogeneously integrated electronic package. First, a low thermal conductivity interposer enhanced with an array of conductive thermal vias is employed to provide a high degree of lateral thermal isolation while providing adequate conduction in the vertical...
Epidermal pressure sensor that directly contacts with human skin can be used to monitor physiological signals, such as pulse, blood pressure, and heartbeat etc. Although promising stretchable substrates and electrodes were developed in the past, there is a need for a technology to produce inexpensive epidermal pressure sensor that is sensitive to a low-pressure regime and is flexible and stretchable...
Contact resistance at the transistor source/drain becomes a bottleneck for modern Si CMOS technology. To seek for contact solutions, this paper compares metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) direct contacts in terms of contact resistivity and CMOS compatibility. On p-type substrates, due to the favorable surface Fermi level pinning, MS contact has absolute advantage...
In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.
In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9.5 nm and 10.7 nm with sheet resistances of 620 ohms/sq. and 414 ohms/sq., respectively. Additionally, by reducing knocked-on oxygen during ion implantation,...
An efficient transient thermal simulation of 2.5-D integrated system with through silicon via (TSV) interposer is presented by the equivalent thermal model and the alternating-direction-implicit (ADI) method. The equivalent thermal conductivities of TSV interposer and bump layers are extracted properly. The temperature-dependence of thermal conductivity is taking into account in the modeling as well...
This paper presents the gain enhancement techniques for a 140 GHz CMOS on-chip antenna. The proposed CMOS on-chip folded dipole antenna is mounted on a metal plate which functions as a reflector. Furthermore, by using ion irradiation which increases the resistivity of the silicon (Si) substrate more than 100 ohms-cm, 5 dB of antenna gain enhancement is achieved. Fabricated in a 40 nm CMOS process,...
Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 Ω, and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si...
Electromagnetic band gap (EBG) structures can exhibit high impedance surface (HIS) performance on a lossless substrate. However, the performance of an EBG structure is not only determined by the type of element or physical dimensions, but also by the electrical characteristics of the dielectric substrate. The evolution of an EBG structure from HIS to metamaterial absorber with different lossy silicon...
Reconfigurable reflectarrays provide the ability to combine the advantages of reconfigurable phased arrays with the high gain of reflector antennas. Optical reconfiguration provides the ability to continuously change one or more property of the antenna, without the need for extensive RF biasing compensation. To this end, an optically reconfigurable reflectarray has been designed, operating in Ka-Band...
A novel silicon PIN diode with guard ring structure on top of the device for fast neutron dose measurement is presented. The device is designed to include p+ and n+ square contacts on each side of the high resistivity silicon, and a p+ ring surrounding the square p+ region on front side of the device. The sensitivity of the PIN diodes to Am-Be isotropic fast neutron radiation source, whose energy...
As electronic product becomes smaller and lighter with an increasing number of function, the demand for high density and high integration becomes stronger. Interposers for system in package will became more and more important for advanced electronic systems. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration;...
For high frequency applications, the electrical circuit performance is strongly related to the quality and loss characteristics of the passivation layer. In this work, we present the comparison of high frequency performances of different passivation materials for in a frequency range up to 110 GHz. The evaluation of the materials is based on measurement of coplanar transmission lines on the redistribution...
This paper explores the possibility of using silicon as a viable substrate for future RF/microwave applications in communication, defense and air-borne systems. Basic study on substrate characteristics has been outlined here. Single as well as multiple frequency bands have been targeted for some commonly used RF circuits. Experimental results give an overview of the performance of these circuits on...
This last decade Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency commercial applications pushing the limits of CMOS technology. Thanks to the thinning down of the silicon channel, SOI MOSFETs operate in fully depleted regime and short channel effects are under controlled. Besides the gate length downscaling, strain channel engineering is introduced...
As electronic products becomes smaller and lighter with an increasing number of function, the demand for high density and high integration becomes stronger. Interposers for system in package will became more and more important for advanced electronic systems. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration;...
We determine the thermal conductivity of single layer graphene supported on silicon nitride layer followed by a silicon substrate using a three dimensional simulation study. Temperature distribution profile along the graphene flake is obtained and heat transmission in graphene layer along with the subsequent layers is investigated by modeling the laser light as heat source. Two types of heat sources...
We report on the present status and future prospect of nano-carbon interconnect technologies, consisting of carbon nanotube (CNT) vertical interconnects (vias) and graphene horizontal interconnects, mainly in terms of material growth and fabrication process technologies to meet the requirement of process compatibility with a conventional Si LSI. Their superior electrical properties for replacing Cu...
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