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A framework for the simulation of nanosecond laser annealing of structures found in 3D sequential integration is presented. The framework includes a finite difference frequency domain Maxwell solver and a Poisson solver for the thermal diffusion. Simple applications illustrate the advantages, expected difficulties and optimization levers of this annealing technique.
GaN MMIC technology is now in production and is revolutionizing microwave Radar and Communication systems. In this paper we present an overview of GaN MMIC technology, focusing on device characteristics, reliability, and high frequency performance. We also introduce emerging GaN technologies such as GaN-on-diamond and the heterogeneous integration of GaN with Silicon.
Body bias effects on the laser-induced transient current peak, duration, collected charge and amplification factor are experimentally evaluated. The results are promising for radiation-hardened circuit design.
Laser Fault Injection (LFI) is one of the most powerful methods of inducing a fault as it allows targeting only specific areas down to single transistors. The downside compared to non-invasive methods like introducing clock glitches is the largely increased search space. An exhaustive search through all parameters including dimensions for correct timing, intensity, or length might not be not feasible...
A new 600V Partial Silicon-on-Insulator (PSOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped profile induces an electric field peak in the surface of the device, which can improve the surface field distribution and the doping accommodation...
In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on-current, subthreshold voltage, and drain-induced-barrier-lowering...
Data with increasing bandwidth requires future general-purpose as well as application specific microprocessors to improve performance endlessly. Transistor scaling, novel transistor structures, novel state-of-art VLSI design techniques and new computer architectures are the key drivers for boosting power and performance of microprocessors. Unfortunately, the processor cooling technique is unable to...
A novel methodology for the post placement leakage reduction based on employment of the stress-enhanced filler (SEF) cells was developed. Desired reduction of sub-threshold leakage in test chip silicon was achieved by placement of SEF cells close to the most leaking devices. In the standard cell rows the “optimization zones”, representing portions of the row located between two consecutive fixed cells...
In this work, the potential of Si1−xGex Quantum Wells (SiGe QW) for future DRAM periphery transistors and more generally for Low Power applications is investigated. It is shown that an increase of Ge content in the channel leads to a significant reduction of threshold voltage and to an increase of long channel mobility. However, an increase of external resistance is observed for Si1−xGex Quantum Well...
The purpose of this paper is to analyze the ESD device electro-thermal behavior of BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. This evaluation is based on 3D TCAD simulations with classical physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope (AVS) method). We show how the series resistance...
This paper presents a novel GaN transistor based bidirectional isolated DC-DC converter for stationary energy storage device (SESD) for 400V DC microgrid. The improvements achieved in the application includes: first, benefitting from the internal ultra-fast free-wheeling diode, the converter's operation range can be expended to light load conditions (switches operate in hard switching). The light...
The rapid pace of technological progress over the past 40 years would not have been possible without a concomitant improvement in long — term reliability of circuits [1]. Despite significant challenges, circuit reliability has been maintained, preventing it from constraining the rate of scaling. Looking forward, we anticipate almost continual innovation in the architecture and materials of transistors...
1320 nm Continuous Wave (CW) laser is conventionally used for Timing Analysis techniques like Laser voltage probing which has spatial resolution limitation as the technology node scales down. This paper illustrates case studies using 1064 nm CW laser for timing analysis and highlights its spatial resolution advantages for use in Fault Isolation.
For 3D monolithic integrated (3DMI) technology, the most important task is to fabricate high performance stackable device and prevent damage on underlying device and structure during processes. In this article, we propose a green nanosecond laser crystallization and laser spike anneal process to fabricate 3D stackable ultra-thin body transistors and realize a sequentially layered integrated circuit...
As the semiconductor technology keeps scaling down, Poly silicon gate pattern becomes more and more critical. If the Poly silicon variation is too big or some mismatch, it will induce severe logic parametric fail or even functional fail, whi ch is difficult for the failure analysis. For the analog device, it ca n induce functional fail. In this case, a function related failure was analyzed an d the...
It is reported in this paper that Idsat can be affected by fluorine implant under certain circumstance. The mechanism is believed to be that highly mobile fluorine atoms in reacting with Si vacancies or interstitials to further impact on the active dopant causing the Idsat change.
This paper presents a distributed energy storage device (DESD) based on a novel isolated bidirectional DC-DC converter with 650V GaN transistors. The device integrates a low-voltage (13.2V) Li-ion battery pack, an embedded bidirectional DC-DC converter and wireless communication system. The three parts are packaged together, thus it can be directly connected to high-voltage (380V) DC grid, enabling...
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0...
Stand-alone Electrically Erasable Programmable ROM (EEPROM) are widely used in industrial, automotive and portable consumer applications. Requirements for high density EEPROM have been steadily increasing in recent years. As deep submicron nodes are used to achieve highly dense bit-cells, the propensity for process-induced defects associated with compact isolation rules and architecture also increase...
This paper proposes an equivalent circuit model of 3-D DRAM cell transistors with recess gate and saddle fin structure for the first time. The model effectively characterize the sub-threshold and off margin behavior of the scaled DRAM cell transistor by considering the parasitic sub-channel and vertical transistor components into account. TCAD simulation and experimental data have confirmed the accuracy...
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