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In this work, we report on the influence of underlap architecture (LUL) and ground plane (GP) on the analog/RF performance metrics of Ultra-Thin Body and Buried Oxide (UTBB) Fully-Depleted (FD) SOI MOSFETs with 25 nm gate length. Small-signal transconductance (gm), gate-to-gate capacitance (Cgg) and the cut-off frequency (ft) are the figures-of-merit (FoM) of interest. It is shown that longer underlap...
This work investigates the impact of gate-source/drain underlap (LUL) together with different ground plane (GP) structures on the digital figure-of-merit (FoM) of 25 nm UTBB FDSOI devices using two-dimensional (2D) numerical simulations. It is found for all ground plane structure, longer underlap produces 1) lower off-current (Ioff) but at a cost of lower on-current (Ion), thus a lower transconductance...
In this work, we investigate the impact of varying silicon-body thickness, Tsi i.e 5 nm, 7 nm, 10 nm and 12 nm on the digital figures-of-merit performance of Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode. We show that degradations of the digital characteristics i.e DIBL, subthreshold-slope...
In this work, we investigate the impact of using different gate dielectric materials i.e HfO2 and Si3N4 as compared to the conventional SiO2 with equivalent oxide thickness (EOT) of 1.2 nm on the digital and analog performance of UTBB SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode by numerical simulations. It is found that Si3N4...
In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on-current, subthreshold voltage, and drain-induced-barrier-lowering...
In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction...
In this paper, based on simulations, we present the impact of the different substrate space-charge conditions, on the Drain Induced Barrier Lowering (DIBL) of Ultra-Thin Body (UTB) SOI MOSFETs with two buried oxide (BOX) thicknesses as a function not only of substrate bias but also of drain lateral field penetration into the BOX and underlying substrate. We notice that the lowest DIBL is achieved...
In this work, we investigate the impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation modes by numerical simulations. Simulations were performed for 10 nm gate length UTBB SOI MOSFET of 7 nm thin body (Tsi) and 10 nm thin buried oxide (TBOX) for Vd = 20 mV and 1.0 V. For DG operation mode, the back-gate (BG) and front-gate (FG) were swept...
In this paper, we present the simple approach in study the impact of channel doping on the operation of the junctionless transistor transistor in 25 nm gate lengths through 2D-TCAD Sentaurus simulation tools. We increase the channel doping up to the level of doping source and drain, thus creating the junctionless phenomena between source and drain. The transistor parameters such as threshold voltage,...
In this paper, we investigate the channel length (LCH) of the silicon-on-insulator (SOI) n-type tunneling field effect transistor (NTFET) with the respect of device performance. 2D-device simulation was used for simulating the devices with 30 nm gate length of SOI NTFET with 10 nm thin buried oxide (tBOX) and 7 nm thin silicon body (tsi). The device performance, such as threshold voltage (VTH), ON...
othman n. & MOHD nasurdin a. (2012) Journal of Nursing ManagementSocial support and work engagement: a study of Malaysian nursesAim This study addressed the question of whether social support (supervisor support and co‐worker support) could contribute to the variance in work engagement.
Background Nurses, as customer‐contact employees, play an important role in representing the organization’s...
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