The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High frequency wine-glass mode bulk MEMS resonators actuated by means of capacitive transduction have been fabricated by using solid-gaps based on polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE). The fabrication process flow of patterned PVDF-TrFE gaps applied in RF MEMS is presented for the first time. Measurements of the polarization of the material and the frequency and voltage dependence...
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
We present a design and first test results of a novel microelectronic system for large-scale electrical stimulation and recording of brain activity in the behaving animals. The system is based on a new 64-channel ASIC being designed in the AMS 0.35 µm CMOS process and is compatible with all modern multielectrode silicon probes for brain research. It allows to record neuronal activity at up to 512...
In this study, a nanowire crossbar Si3N4/SiO2 bi-layer resistive random access memory (ReRAM) with copper (Cu) electrode has been fabricated successfully by a Cu chemical displacement technique (Cu-CDT). The Cu-CDT could overcome the difficulties of Cu dry etching and achieve a high density crossbar array of Cu-based ReRAM. Compared with other Cu deposition techniques, Cu-CDT exhibits several advantages...
This paper demonstrates silicon-integrated, thinfilm, high-density tantalum capacitors for integrated power modules. The capacitors in form-factors of less than 75µm showed stable capacitance densities of more than 0.3 µF/mm2 with leakage of less than 0.1 µA/µF at 3 V. To the best of authors' knowledge, this is the highest capacitance density reported till date at the mentioned form-factors. Furthermore,...
Here we present the fabrication process for silicon-in-glass electrodes as capacitive transducers. The embedded electrodes are formed by utilizing a glass reflow process. DRIE process easily defines the number and shape of these embedded silicon electrodes. Eight, sixteen, twenty-four electrodes are obtained through this process. These silicon-in-glass electrodes are anticipated to be operated to...
A novel kind of RF MEMS lateral extensional thin-film piezoelectric-on-silicon(TPoS) resonator with narrow tethers is proposed. The conventional three-layers supporting beams could be simplified to single material by utilizing different kinds of doping on the bulk structural silicon layer. Within the scope of the fabrication process allowed, the width of tethers could be decreased from 10µm to 2µm,...
This paper reports fabrication of CMUT (Capacitive Micromachined Ultrasonic Transducer) based forward looking ultrasonic endoscope using custom designed LTCC (Low Temperature Co-fired Ceramic). Bottom electrodes and cavities are separately patterned on LTCC and SOI wafers, respectively. LTCC wafer is used as bottom substrate (prime wafer) for anodic bonding and ring array and linear array CMUTs transducers...
Nanostructure has been envisioned as a novel factor to enhance biomolecular sensing characteristics. In this work, we propose a novel biosensor by using a nano gap formed between two electrodes for biomolecular detections. The nano-gap electrode increases sensitivity of near-surface electrochemical conductances. To examine the proposed sensing characteristics of the nano-gap electrode, different conductive...
In this paper, a two dimensional charge plasma based Single and hetero-gate dielectric Si0.5Ge0.5 doping-less tunnel field effect transistor (DL-TFET) is reported. Further, a comparative analysis of Si Single and hetero-gate dielectric DL-TFETs with Si0.5Ge0.5 Single and hetero-gate dielectric DL-TFETs are also presented for better understanding. The proposed Si0.5Ge0.5 DL-TFETs shows an improved...
Piezoelectric micromachined ultrasonic transducer (pMUT) gains increasing interests from researchers. It overcomes the inherent shortcomings of conventional bulk ultrasonic transducers such as acoustic impedance mismatching. In addition, pMUT does not require the extremely large input voltage as capacitive micromachined ultrasonic transducer (cMUT), which is potential to be integrated into portable...
This paper presents a TCAD study on the performance of Si and Ge-GaAs hetrojunction dopingless tunnel field effect transistor (TFETs). Si tunnel device have low on current. So hetrojunction architecture is combined with dopingless structure for improving on current with smaller off current. Dopingless architecture uses low thermal budget for fabrication so hetrojunction dopingless TFET are suitable...
This paper describes the prediction method of the bottom temperature of power Si MOSFET by using CFD (Computational Fluid Dynamics) analysis. For accurate thermal design of electronics, nano-micro scale hot spot temperature in semiconductor devices should be considered in thermal design. CFD analysis is widely used in thermal design of electronics. However, it is difficult to detect accurate temperature...
For the last decade, paraelectric BaxSr1−xTiO3 (BST) thin films have been especially studied to fabricate MIM capacitor for capacitance tuning applications. This paper describes the mechanisms of cracks apparition under BST stacked MIMIM capacitors (Metal Insulator Metal Insulator Metal) built on silicon substrate. The methodology used in this study to have a further understanding of this phenomenon...
Memristive devices are promising nanoelectronic components for the next generation non-volatile memory and unconventional computing. As they are most likely be used together with CMOS platform, it is important to develop CMOS compatible memristive devices in terms of materials, processes, and most importantly, electrical performance. In this paper, we first introduce our efforts towards low-voltage...
The design, simulation, fabrication and test results of micro-resonators integrating piezoelectric zinc oxide (ZnO) layers are reported in this paper. Interdigitated electrodes are used to excite the thin piezoelectric layer. These micro-resonators are built on top of 2µm silicon membranes of SOI wafers. To improve the quality factor Q and the electromechanical coupling coefficient kt2 of the proposed...
In this paper, an electrical biasing structure is proposed for a tunable Substrate Integrated Waveguide (SIW) device with Liquid Crystal (LC) as the tuning component. The biasing circuits or electrodes are made of chromium and gold layers. Silicon nitride layer, which has a thickness of 1 µm, is employed to isolate the electrodes against ground. Since voltage as high as ±200V may be applied, high...
This paper reports a tri-fold inertial measurement unit (IMU) that is fabricated with a batch-mode 3-D assembly process. Each chip of a tri-fold die includes a single axis z-gyroscope and 0–2 lateral-accelerometers. The tri-fold dies are batch-mounted on sidewalls of silicon cavities on a wafer to form 6-axis IMUs. The accelerometer has a measured bias instability of 6.8 µg and a noise floor of 66...
This paper presents the design, fabrication and preliminary characterization of a new type of multi-axis capacitive accelerometer with sub-µg resolution based on a robust CMOS-compatible 2-gap fabrication technology that can provide large proof-mass (1 mm tall, >2.33 milligram/mm2), high aspect-ratio (HAR) narrow sense gaps (<3 µm wide, >250 µm tall) and large sense/feedback electrode area...
The last decade, an important effort has been allocated to emergent nanomaterials as an alternative route to current silicon-based technologies in order to face physics issues appearing with the downscaling of electronics components (Moore's law). In this paper, studies on DNA material have been conducted in order to take advantage of both DNA nanoscale and auto-assembling properties. The combination...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.