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The International Meeting for Future of Electron Devices, Kansai (IMFEDK) was established in 2003 to provide an international opportunity for technical discussion in Kansai, Japan. Multidisciplinary discussions by various researchers and engineers from different point of views are much expected in the meeting for creating embryos of science and/or technology to be the main stream of device technology...
We have investigated CMOS photonics based on heterogeneous integration of SiGe/Ge and III–V semiconductors on Si, which gives us opportunities to enhance functionalities of Si photonics through their superior material properties for electronic-photonics integrated circuits.
The neuromorphic retina is a very large scale integrated (VLSI) circuit whose structure and function are designed to mimic those of retinal neuronal network. We have developed a neuromorphic retina model to study the function of retinal circuits in natural visual environment. The model consists of analog VLSI circuit and Field Programmable Gate Array (FPGA), enabling to reproduce responses of major...
This paper uses Cole-Cole plots to analyze the capacitance component of the pseudo-MOSFET as a function of frequency. Measurements of silicon-on-insulator wafers identify three capacitance components. Simulations using an equivalent circuit model of the pseudo MOSFET successfully match the measurement results over a wide range of frequency and can explain the probe-number dependence of impedance characteristic...
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution...
n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I–V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.
We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga∶Sn=1∶3, On the other hand, for the thin films for Ga∶Sn=3∶1, both the transmittance...
Transverse thermoelectric effect is a thermal to electric energy conversion, where the direction of electric field is perpendicular to the direction of heat flow. This phenomenon makes it possible to decouple thermal and electric current paths and provides design flexibility of thermoelectric devices. This paper describes a basic concept of transverse thermoelectric devices.
Vibration modes of MEMS diaphragms were investigated in piezoelectric ultrasonic microsensors from the viewpoint of how their top electrodes affect the vibrations caused by an airborne ultrasound pulse. The top electrode of the sensors is divided into two parts for ultrasonic sensing and resonant frequency tuning to utilize them for a high resolution measurement technique which uses two resonant frequencies...
Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages...
We are developing cellular neural networks using thin-film transistors (TFTs). Although simplification of the circuits for the neurons and synapses is also needed for the cellular neural network, the detailed discussion is not sufficient for the cellular neural network. Particularly in this study, we tried simplification of synapse devices. We used discrete trimmer resistors and capacitors for the...
The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.
Physical Unclonable Function (PUF) is attracted attention as a countermeasure for imitation electronics. PUF makes unique IDs using the variations when LSI manufacturing. On the other hand, lightweight block ciphers are proposed as security module for IoT devices. This study verifies the feasibility of security module using a lightweight block cipher (TWINE) and PUF.
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