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2016 Compound Semiconductor Week (CSW) [includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) and 43rd International Symposium on Compound Semiconductors (ISCS)]
Selective area growth (SAG) technology has been added to an established InP monolithic integration platform to fabricate arrays of multi-wavelength distributed feedback (DFB) lasers. The local epitaxy growth rate is controlled by the SiO2 mask width, and different quantum well (QW) thicknesses can be obtained in one run. The laser wavelengths span from 1447 nm to 1602 nm. The DFB lasers may include...
The thin film ZLAST(ZnxPbySbzAgmTen) was studied by combinatorial approach. ZLAST thin films were co-deposited from a stoichiometric Ag, Sb, PbTe, and Zn4Sb3 alloy target onto glass substrates using a custom designed radio-frequency (RF) magnetron sputtering system. The crystalline phase and variations in the composition of the thin films were determined using field emission scanning electron microscopy,...
Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).
The incorporation of Ga at the transition stage from InAs vertical growth to InGaAs lateral growth was investigated for the InGaAs microdiscs on a patterned Si (111) substrate by metal-organic vapor-phase epitaxy (MOVPE). X-ray diffraction reciprocal space mapping (XRD-RSM) of (331) plane clarified the extent of InGaAs lattice relaxation and solid Ga content as a function of the partial pressure of...
We have successfully mitigated the out-diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb layer also provides a smoother surface morphology with its root mean square roughness of 0.664 nm. Using a GaAsSb step-graded buffer (SGB) and an AlGaAsSb high resistivity buffer, we are able to grow...
Corundum-structured α-Ga2O3 is a prospective material for power devices because it has expectable large bandgap and high breakdown field. We have shown the fabrication of α-Ga2O3 thin films on sapphire substrates, but many dislocations were confirmed in the α-Ga2O3 thin films. In this presentation, we report the growth of α-Ga2O3 thin films on α-(AlxGa1−x)2O3 buffer layers by mist CVD, for improving...
A spin metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most promising devices for future electronics because of the compatibility with the conventional semiconductor technologies and its variety of potential applications such as reconfigurable circuits; however, there are some problems to be solved to realize spin MOSFET. In particular, realizing and controlling the spin dependent...
In this work, we fabricate Pt, Ni and Pd vertical Schottky barrier diodes (SBDs) on bulk (−201) α-Ga2O3 substrates. We fabricate the diodes on two types of Ga2O3 substrates, un-intentionally doped (UID) with 1017 cm−3 electron concentration and Sn-doped with 5×1018 cm−3 electron concentration. We characterize the diodes with current-voltage (I–V), capacitance-voltage (C-V) and reverse breakdown measurements...
In this work, we characterize the scalability of ZnO TFTs for RF transistor and DC switching applications through variations in channel length, total device periphery, and parasitic gate overlap capacitance. For simple device test structures that have not been optimized for either RF transistors or DC switches, we show drain current density (IDS) and Ron scalability for channel lengths (LC) from 10...
We study local-strained structures of CVD-grown monolayer MoS2 flakes fixed on PMMA. Wrinkle structures are observed on the flakes which are slightly deformed due to compression induced by surrounding PMMA. Moreover, using AFM nanoindentation, we fabricate strained dip structures with different loading force and demonstrate tunability of the dip configuration, hence local strain tunability. Additionally,...
We studied the electronic and structural properties of the interfaces between the niccolite (n-) polymorph of ferromagnetic MnSb and the binary semiconductor InP along the MnSb(0001)/InP(111) direction. Plane-wave pseudopotential ab-initio electronic structure calculations were used. The Mn-to-P interface becomes 63.0% spin-polarized, much higher than the bulk polarization. The other three possible...
An E-mode GaN MIS-HEMTs using multilayer La2O3/HfO2 as gate insulator is investigated for high power application. The multilayer La2O3/HfO2 composite oxide transformed to HfLaOx amorphous phase with low density of interface traps and border traps after post deposition annealing (PDA) at 6000C as judged from the C-V characteristics of the HfLaOx/GaN MOSCAP. The device exhibits a low ON-resistance of...
Here, we present our recent highlights on monolithically integrated GaAs-nanowire lasers on silicon and further demonstrate capabilities in epitaxial gain control to tune threshold power density and lasing wavelength. Importantly, the investigated NW lasers reveal high spontaneous emission coupling factors (beta-factor) of 0.2, and ultrafast temporal emission down to < 3 ps, equivalent to repetition...
The GaN HEMT power device with field plate for device reliability improvement is investigated. Overall, the field plate structure smooths the electrical field distribution in the HEMT structure and reduces the generation of defects and the interface traps in the device, resulting in higher device breakdown voltage, lower leakage current, and less current degradation with steady dynamic on-resistance...
Electrical characterization of low-doped n-type and p-type GaN layers grown by metal-organic vapor phase epitaxy are presented. The GaN layers were grown on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-type GaN, the impact of electron trap on electrical characterization is discussed. Charging of trap in a depletion layer affects C-V characteristics. Correction is needed for...
We fabricated InGaAs-HEMTs with two-step recess (TSR) gates and SiCN-based multi-step slant field plates (FPs). The results indicate that the FP enhances the breakdown voltage (BV) of the TSR gate devices, and the TSR gate improves the current gain cutoff frequency (fT) in comparison with the conventional recess gate devices with FPs. The results also indicate that the TSR gate makes BV lower than...
We investigate fabrication of a photonic-crystal structure by air-hole retained crystal regrowth using TBAs-based MOVPE for GaAs based photonic-crystal lasers. Air holes having a filling factor of 10 % (the depth was 250 nm and the width was 110 nm) are successfully embedded. The embedded air holes show characteristic shapes due to anisotropy of growth rate along different crystal planes, such as...
Refractive index change using quantum well intermixing (QWI) was investigated for lateral light confinement of vertical cavity surface emitting lasers (VCSELs). Refractive index change of a GaInAs/GaAs quantum well by the QWI was numerically analyzed from calculated absorption spectrum. 1% of refractive index change is expected by control of the QWI condition. A QWI-VCSEL was fabricated for verification...
Nonpolar AlGaN light-emitting diodes have been attracting much attention due to their potential for realizing optoelectronic devices with high efficiency and stability. However, few studies have been reported on the optical properties of nonpolar AlGaN quantum wells (QWs) on sapphire because of the difficulty in the growth. Here, we report the fabrication of an a-plane AlGaN QW on r-plane sapphire...
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