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Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction onsample temperature or conductivity. Using this technique, we studied native and plasma-treatment induced defects in GaN layers grown on Si substrates deposited by metal organic chemical vapor deposition. Measurements...
Increasing demands for higher performance LSIs require three dimensional (3D) structures such as a FinFET and 3D integration package, and a 3D NAND flash memory. We focused on damage creation mechanism in such structures during plasma etchingplasma-induced physical damage (PPD). Compared to PPD in planar FETs (e.g. Si recess), atomistic simulations predicted that, during etching of FinFETs, both “straggling”...
X-ray photoelectron spectroscopy (XPS) data indicate that organosilicate glass (OSG) films with backbone carbon (Si-R-Si) exhibit significantly enhanced resistance to carbon loss upon exposure to either atomic oxygen (O(3P)) or to vacuum ultraviolet light in the presence of O2 (VUV+O2)—important factors in O2 plasma environments—compared to films with terminal methyl groups (Si-CH3). These results...
The dependency of Cu interconnects barrier metal liner integrity due to neighboring pattern density is presented in this paper. It was found that TaN/Ta bi-layer barrier metal liner on isolated Cu interconnects was oxidized through electrical test and failure analysis. An elaborate study on the neighboring interconnects pattern density as well as process solutions were explored to investigate the...
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 µO·cm) was obtained at 400 °C by PEALD, which is close to the resistivity...
Through silicon via (TSV) technology has been widely applied in CMOS image sensors (CIS). This paper reports the wetting behavior of polymer liquid in the TSV insulation process by spin coating. The O2 plasma treatment was used to increase the hydrophilicity of the substrate surface in order to reduce the adhesion between the polymer liquid and the via sidewall. This surface treatment was to ensure...
This paper reports the reactive i on etching (RIE) characteristics of partially-cured benzocyclobutene (BCB) in sulrur-hexafluoride/oxygen (S F6/O2) plasmas. The etching rate and etch anisotropy are mainly dependent on RF power, chamber pressure, and SF6 concentration. The processing parameters are investigated ranging from 50 to 200W, 22.5 to 270 mTorr, and 0% to 80%, respectively. According to the...
"2.5D silicon interposers" and "Hetero 3D stacked" technology for high-performance LSI are gathering the most attention from now on. These technologies can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked each function devises. 2.5D and hetero-3D Si integration has great advantages over conventional 2D devices such as high packaging...
This paper will focus on recent results for wafer stacking of temporary bonded wafers for the integration in a monolithic device process. For ease of process integration, this process enables the face-to-back stacking of several device layers. Plasma activated fusion bonding could be shown to be an enabling step to lower annealing temperatures into a CMOS compatible range. Furthermore, plasma activation...
In this work we use atomic force microscopy to investigate the influence of the annealing temperature on the formation of nano-clusters in our growth technique for carbon nanotubes. Cluster formation is carried out just before in situ growth of carbon nanotubes from a methane feedstock by means of catalytic chemical vapor deposition where the clusters act as the catalyst. Since cluster size and distribution...
In support of improved productivity for the semiconductor and optoelectronics manufacturing industry, new work is presented on the development of a plasma-based die singulation process technique for thin Si wafers. It is shown that the technique leads to a significant gain in productivity through reduced process times and increased available good die per wafer. Some additional related key benefits...
This paper gives new insights into the role of both the microstructure and the interfaces in microcrystalline silicon (μc-Si) single-junction solar cells. A 3-D tomographic reconstruction of a μc-Si solar cell reveals the 2-D nature of the porous zones, which can be present within the absorber layer. Tomography thus appears as a valuable technique to provide insights into the μc-Si microstructure...
The orthogonal experiment is used for selecting parameters of the etching SIO2 equipment. The process applies etching uniformity and etching rate as evaluation indexes. The main factors influencing etching process are found out. Through further optimization, the advanced SIO2 etching is made to realize etching uniformity less than 5% and etching rate higher than 300nm/min.
This paper propose a novel method of integration microfluidic sample delivery system with silicon nanowire (SiNW) biosensor device, which provide multiplexed detection capability as well as protect the fragile sensing elements from mechanical shocks and surrounding impurities. The SiNWs and PDMS chips were fabricated with complementary metal oxide semiconductor (CMOS) compatibility and low cost methods...
The paper presents results of structure analysis of silicon oxide films prepared by plasma enhanced chemical vapor deposition (PECVD) methods with a high power plasma excitation. The films were deposited from hexamethyldisilazane and oxygen mixture. Dependences on deposition parameters are presented.
Plasma processes have long been used in various stages of semiconductor device fabrication. Plasma enhanced chemical vapor deposition (PECVD) has been widely used as a low temperature silicon dioxide film deposition method in the semiconductor industry. [1,2] Various modes of plasma etching techniques also have been playing major roles in the silicon industry. Physical vapor deposition (PVD or sputtering),...
In PureB technology, a layer of pure boron is deposited on Si using a commercial single-wafer Si/SiGe epitaxial CVD reactor, forming ideal nm-deep ultrashallow junctions with low saturation currents [1]. As another attractive feature, the PureB layer itself has proven to be a robust front-entrance window for photodiode detectors for low penetration-depth beams such as DUV [2], VUV [2] and EUV [3]...
This paper discusses the preconditions of thinned wafer with plasma back side stress relief (BSR) and chip side healing (CSH) processes applied in order to improve die strength allowing for stacking via pick and place preventing yield loss due to die cracking. As wafer thinning and singulating (dicing) leave scattered process marks (kerfs, chipping, micro cracks) on the chip, the thin die is prone...
Plasma-induced defect generation process in crystalline Si structure was simulated by classical molecular dynamics simulations. Energy distribution functions of Ar and Cl ions incident on the Si surface (IEDF) were implemented to predict the impacts on the defect generation processes in present-day plasma process equipments. The damaged-layer thickness was confirmed to be a weak function of IEDF,...
It has been found that both in gases [1] and transparent materials plasma [2], produced by the leading part of tightly focused and intense femtosecond laser pulse, results in strong beam delocalization. It means that essential part of the ultra-short laser pulse energy (actually up to 99%) can be scattered outside the beam caustic. Correspondingly, this effect limits the intensity of light one can...
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