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Glass is well established as wafer or panel substrate for applications like capping of image sensors or as low loss carrier for integrated passive devices. Glass substrates with higher functionality becomes more attractive for the advanced packaging due the improvement of glass processing and the increased implementation of photonic packaging which is demanded for higher data transfer rates. The through...
As electronic product becomes smaller and lighter with an increasing number of function, the demand for high density and high integration becomes stronger. Interposers for system in package will became more and more important for advanced electronic systems. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration;...
In this paper, we present an innovative solution to successfully metallize Through Silicon Vias (TSV) with High Aspect Ratio (10:1). These structures represent a key element in the 3D mid-process integration approach. The metallization consists in depositing, respectively, a diffusion barrier and a seed layer, using two different conformal deposition techniques. The technique used for the barrier...
Currently glass is mainly used as unstructured wafers or panels with the highest market share in glass capping applications. Higher functionality in glass is driven by the applications in RF and Photonics. Since the technologies of via interconnects in Si and glass are completely different, it is challenging to perform a direct and fair comparison. Mainly laser technology and electrical discharge...
We reported a wafer level through-stack-via (TSV) integration approach for stacked memory module using onetime bottom-up copper filling. This bumpless TSV integration approach simplified the fabrication process and provided better reliability compared with solder based technologies. Silicon wafer with blind vias was first bonded to a carrier wafer face to face with pre-patterned BCB, and then thinned...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
3D IC integration based on through silicon vias (TSVs) is expected to provide an alternative technology that can exceed the Moore' Law because of its high packaging density, short signal path, low signal delays. Via filling of conductive materials is regarded as one of the key technologies in the TSV process flow. In this paper, conductive materials such as copper was chosen to fill the TSVs due to...
Pretreatments have a great effect on the through silicon via (TSV) copper electroplating filling process. In this study, we compared the wetting effect by observing cross-sectional images of samples pretreated with ultrasound and vacuuming method. And the electrochemical test was used to verify the effect of acid plating solution on the oxidation of the Cu seed layer. Without any pretreatment, vias...
3D Integration is a good solution for extending Moore's momentum in the next decennium. Through Silicon Via (TSV) is an alternative interconnect technology for higher performance system integration with vertical stacking of chips in package. Due to high demands of chip miniaturization, small diameter TSV with high aspect ratio has become particularly important. This paper focuses on Cu electroplating...
The coefficient of thermal expansion (CTE) of metal (e.g., copper, tungsten and solder) filled in through silicon via (TSV) is a few times higher than that of silicon. Thus, when the metal filled TSV is subjected to temperature loadings, there is a very large local thermal expansion mismatch between the metal and the silicon/dielectric (e.g., Si02), which will create very large stresses at the interfaces...
Through Silicon Vias (TSV) is a very promising technology in advanced packaging, for the replacement of wire bonding. This technology is becoming mandatory for fully integrated products such as SiP, SoP, 3D components integration (e.g memory stacking), or MEMS structure packaging. Different alternatives are currently investigated such as via-first or via-last. Into the via-first family two different...
In recent years, through wafer electrical connections have become important roles, which will be used in developing high-speed, compact 3D microelectronic devices in next generation. Although the electroplating copper is a well-established process, completely void-free electroplating in through silicon holes (TSH) with a high aspect ratio remains a big challenge. Naturally, local current distribution...
TSV has now been a hotspot of the industry for years. Comparing with the wire-bonding, the technology populated in the last decade, Through Silicon Via (TSV) has merits of shorter wiring route, better signal integrity, larger bandwidth, lower power consumption and smaller packaging size. Undoubtedly, the TSV is treated by the industry to be the next generation of packaging solution to replace the...
The fabrication of through-silicon vias (TSVs) is a major component in the development of three-dimensional (3D) integration technology and advanced 3D packaging approaches. The large diameter and length of TSVs, as compared to traditional interconnects, create some unique process challenges. Via plating and chemical-mechanical polishing (CMP) processes used in standard copper interconnect technology...
This paper deals with the development of a process for medium density through silicon via (TSV) polymer filling. This solution is driven by reliability considerations. Firstly, a set of specifications concerning the polymer selection is presented. Secondly, the process optimization with two kinds of polymers is presented: a liquid resin and a dry film resist. Issues with both of the solutions are...
The 3 D interconnect technology with Thru Silicon Via (TSV) have gained tremendous advancement in recent years. Final adoption of TSV technologies requires a robust and cost competitive TSV processes. Sidewall plated TSV with polymer filling can reduce half of total process steps from TSV copper (Cu) seed deposition to front-via1 expose. TSV plating time can be reduced ~ 60% for sidewall plated TSV...
Three-dimensional integration using through-silicon vias (TSVs) has been widely developed. However, the additional cost of fabricating TSVs is one of the main factors that prevent the use of TSVs in large-scale integrated circuits (LSIs). In this paper, we propose a new and inexpensive TSV process in which TSVs and back-bumps are simultaneously fabricated using electroless nickel electroless palladium...
A new nondestructive evaluation method for detecting delamination between a chip and metallic bumps in area-arrayed flip chip structures has been developed by measuring the local surface deformation of a chip, which is caused by the mismatch in mechanical properties between the metallic bumps and underfill. The change of the local deformation was measured by using a high resolution laser displacement...
Through-silicon-via (TSV) technology has been employed for three-dimensional (3D) packaging of multi-chips. A high interwafer interconnect density can be achieved with a minor area penalty. Having shorter signal paths between dies make it possible to improve the system's performance by permitting the system to run faster, alleviate interconnect delay problems, it also consumes less power. Copper has...
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