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A theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down,...
Power MOSFET plays an important role in power electronic systems, the failure of which will lead to system losing functions. Thus the degradation failure process and mechanism of MOSFET attract wide attention of scholars. However current research works cannot solve the real time degradation monitoring problem of MOSFET. Normally, MOSFET should be removed from the system for testing or monitoring....
Because of properties of high speed, high breakdown voltage, low leakage current and high temperature resistance, silicon carbide (SiC) power devices can be used as processing units in advanced space high-power power system and high temperature propulsion power. However, the single event gate-rupture and burn-out on silicon carbide (SiC) power devices is main problem in space application for its high...
We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller...
This paper presents a novel design of ternary full adder (TFA) using hybrid single-electron transistor (SET) and MOS technology. The proposed circuit is evaluated using the Cadence Spectre simulator with 180nm CMOS technology and SET macro models under various test conditions. Results show that the proposed TFA dramatically reduces the number of transistors required with little or no loss in energy...
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are...
Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide (SiC) power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures. The tested SiC power MOSFETs exhibit excellent terrestrial neutron radiation responses with failure in time rates significantly lower than those of comparable silicon power...
The elimination of electromagnetic emissions (EME) in switch mode power supplies (SMPS) has high importance especially in automotive applications. External filters, spread spectrum techniques and the output driver circuits are the main methods to influence the switching behaviour of SMPS. This paper presents the concept of an output driver with adaptive current source control for high frequency SMPS...
This paper presents the design and implementation of a Very-High-Frequency (VHF) multi-resonant gate drive circuit. The design procedure is greatly simplified compared with some VHF self-oscillating multi-resonant gate drivers presented in previous works. The proposed circuit has the potential to reduce long start-up time required in a self-oscillating resonant gate drive circuit and to better utilize...
In under-sea dc power distribution systems, constant current feed is preferred over constant voltage feed for robustness against long distance cable impedance. The input voltage of each power converter module in a series connected dc power distribution system varies over a wide range as a function of the load power. This behavior brings unique challenges to maintaining zero voltage switching (ZVS)...
A high-performance and energy-efficient 256-bit CMOS priority encoder is presented and realized on transistor level using 32 nm predictive technology. The new circuit is designed with a full custom approach and incorporates 2 novel logic styles: the Multiple-Output Monotonic CMOS (M2CMOS) and the Dynamic Inversion technique (DI). The achieved performance is in the order of O(log2(N)), with respect...
Modern VLSI systems are limited by power constraints, and many solutions exists to reduce power consumption. In static CMOS energy is dissipated by the pull-up and pull-down networks during low-to-high and high-to-low transitions, respectively. The charge is moved from the power source to the load capacitance, then discharged to ground. Charge recovery logic (CRL) saves energy by recovering, or recycling,...
An enhanced lateral BJT in an n-well CMOS technology is formed by connecting a PMOS and a lateral pnp BJT in parallel. In the weak inversion, it offers us an exponential pMOS device with a slope factor of unity implying that its transconductance has been enhanced. This paper applies the enhanced lateral pnp BJTs to realizing a differential pair input stage for a folded-cascoded OTA to obtain better...
A high peak hole mobility of 412 cm2/V-sec at Ninv=1.8×1012 cm−2, a very low Jg of ∼10−4 A/cm2 at Vg=Vfb+1 V and an ultralow EOT of 0.53 nm in Ge pMOSFETs are simultaneously achieved by high-k/0D-HKVGe02 gate stack with suitable treatments. The content of Ge+1 and Ge+2 in GeOx layer are re-oxidized to higher oxidation state by gettered oxygen, which is captured by OD-HfOx from GeOx. The proposed gate...
In recent years, GaN trench MOSFETs have been actively investigated to achieve low on-resistance and high breakdown voltage [1-8]. The absence of a JFET region makes the trench MOSFET a favorable device structure to reduce the on-resistance. However, poor (electron) channel mobility in GaN trench MOSFETs lead to increased channel resistance. This could potentially result in reliability issues and/or...
Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has seen rapid recent progress [1]. An unexplored area of immense interest is the radiation tolerance of these devices, whose high-voltage and high-temperature capabilities...
Electron mobility of ultra thin body (UTB) GeOI «MOSFETs with body thickness (Tbody) down to 3 nm has been systematically investigated and significant mobility enhancement with decreasing Tbody has been observed for the first time. This channel thickness scaling induced mobility enhancement can be attributed to the unique physical property of ultra thin Ge where the electron effective mass reduces...
The unprecedented technological success of the electronics industry over the last five decades have been driven by Silicon (Si) technology at the center of which resides the metal oxide semiconductor field effect transistor (MOSFET). Relentless scaling of MOSFET dimensions ensured faster and cheaper computing since more and more transistor could be packed into the same chip area.1 At the same time...
As we tend towards extremely scaled CMOS circuits, InAs material has potential to replace traditional Si technology[1]. High electron mobility achieved in this material can enable n-type MOSFET operation at lower voltage supply(Vdd). Another key point required for a very low Vdd operation is to reduce the MOSFET access resistance(Raccess). Many studies have been reported on that topic[2][3]. However,...
In this paper, we demonstrate for the first time an implant free In0.53Ga0.47As n-MOSFET that meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (μeff, peak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1nm EOT without loss of performance,...
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