As we tend towards extremely scaled CMOS circuits, InAs material has potential to replace traditional Si technology[1]. High electron mobility achieved in this material can enable n-type MOSFET operation at lower voltage supply(Vdd). Another key point required for a very low Vdd operation is to reduce the MOSFET access resistance(Raccess). Many studies have been reported on that topic[2][3]. However, few experimental studies had been reported on S/D regrowth by selective Molecular Beam Epitaxy(MBE)[4]. In this context, we present electrical performance obtained on UTB InAs MOSFET with raised InAs n+ S/D by local selective MBE with a low Raccess.