Search results for: Aurelien Olivier

Items from 1 to 6 out of 6 results

chapter

Ultra thin body InAs MOSFET with raised InAs n⁺ S/D by selective MBE

Matej Pastorek, Mohamed Ridaoui, Alain Fadjie, Aurelien Olivier, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

As we tend towards extremely scaled CMOS circuits, InAs material has potential to replace traditional Si technology[1]. High electron mobility achieved in this material can enable n-type MOSFET operation at lower voltage supply(V_dd). Another key point required for a very low V_dd operation is to reduce the MOSFET access resistance(R_access). Many studies have been reported on that topic[2][3]. However,...

article

Temperature-dependent spontaneous emission of PbS quantum dots inside photonic nanostructures at telecommunication wavelength

Muhammad Danang Birowosuto, Masato Takiguchi, Aurelien Olivier, Landobasa Y. Tobing, more

Optics Communications > 2017 > 383 > C > 555-560

Spontaneous emission of PbS quantum dots (QDs) in different photonic nanostructures has been studied. We use the temperature-dependent exciton photoluminescence and the classic dipole near interface models to understand the spontaneous emission control at various temperatures. Then, we demonstrate that the enhancement and the inhibition of PbS QDs due to the local density of states (LDOS) inside nanostructures...

article

Germanium-catalyzed growth of single-crystal GaN nanowires

Umar Saleem, Hong Wang, David Peyrot, Aurélien Olivier, more

Journal of Crystal Growth > 2016 > 439 > C > 28-32

We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows...

article

MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation

Dan Wu, Xiaohong Tang, Ho Sup Yoon, Kai Wang, more

Nanoscale Research Letters > 2015 > 10 > 1 > 1-6

High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was realized...

chapter

Sensitivity improved surface plasmon resonance sensor based on graphene and gold nanorods

Shuwen Zeng, Mathieu Sylvain Bergont, Aurelien Olivier, Xuan-Quyen Dinh, more

2013 IEEE 5th International Nanoelectronics Conference (INEC) > 414 - 416

2013 IEEE International Nanoelectronics Conference (INEC)

In this study, we proposed a new sensing configuration for enhancing the surface plasmon resonance (SPR) based on graphene and gold nanorods (Au NRs). Both analytical modeling based on Fresnel equations and numerical analyses through finite element method (FEM) are performed to optimize the number of graphene layers and the aspect ratio (AR) of Au NRs. The improved sensitivity up to 10⁶ degree/ RIU...

article

From Bulk to Monolayer MoS₂: Evolution of Raman Scattering

Hong Li, Qing Zhang, Chin Chong Ray Yap, Beng Kang Tay, more

Advanced Functional Materials > 22 > 7 > 1385 - 1390

Molybdenum disulfide (MoS₂) is systematically studied using Raman spectroscopy with ultraviolet and visible laser lines. It is shown that only the Raman frequencies of $E_{2{\rm g}}^1$ and $A_{{\rm 1g}}^{}$ peaks vary monotonously with the layer number of ultrathin MoS₂ flakes, while intensities or widths of the peaks vary arbitrarily. The coupling between electronic transitions and phonons are found...

Filter options

Publication date

Set your own date range

INFONA - science communication portal

Search results for: Aurelien Olivier

Ultra thin body InAs MOSFET with raised InAs n+ S/D by selective MBE

Temperature-dependent spontaneous emission of PbS quantum dots inside photonic nanostructures at telecommunication wavelength

Germanium-catalyzed growth of single-crystal GaN nanowires

MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation

Sensitivity improved surface plasmon resonance sensor based on graphene and gold nanorods

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options

Ultra thin body InAs MOSFET with raised InAs n⁺ S/D by selective MBE

From Bulk to Monolayer MoS₂: Evolution of Raman Scattering