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Thermal compression bonding (TCB) is becoming an increasingly important process step in the assembly of advanced components such as fine pitch flip chip packages, system-in-package products, and 3D IC's. To increase the throughput and robustness of TCB processes, it is crucial to understand and control important process parameters like time, force and temperature. However, for TCB processes it becomes...
Processing of bump-less or embedded microbumps is introduced in this paper as an approach which enables scaling microbumps for below 10um pitches. Landing wafer is standard damascene process and in top wafer bumps are embedded in a soft backed polymer. Later during thermo-compression bonding this polymer is cured to bond two chips together. Process flow and results of TC bonding is discussed in this...
This paper examines the key aspects for quality improvement and throughput enhancement of thermal compression bonding (TCB) process using dry film laminated wafer-level underfill (WLUF) material. The WLUF material must have good compatibility with pre-assembly and assembly process steps. And all the process steps after and including WLUF lamination have to be co-optimized to ensure the integrity of...
A feasibility study of die-to-wafer (D2W) bonding of inorganic dielectric layers is conducted on common industrial tools in a typical cleanroom environment. With the help of an additional cleaning step after dicing of the top wafers or using stealth dicing process, 100% bonding success rate from wafers with chemical mechanical polished (CMP-ed) SiO2 has been achieved. Plasma treatment of the top dies...
In the broad-spectrum of 3D system integration technologies, stacking of die at wafer level is considered a promising and cost effective platform solution for 3D device and 2.5D interposer assembly. The 3D die-to-wafer (D2W) approach consists of a sequence of processes: D2W stacking, wafer-level die encapsulation ("wafer reconstruction") using e.g. wafer-level molding, Wafer thinning, Through...
In this paper a bump-less process is introduced in order to further scale down the pitch of microbumps. Electrical resistance measurement, Cross section SEM and mechanical characterizations show successful 3D stacking using proposed method.
With the continuous development of 3D technology, il enables different variety in advanced 3D packaging. One oi the 3D package type which is currently being explored is the die-to-wafer (D2W) configuration. The 3D D2W assembly can be packaged using a standard flip chip with a laminate or BGA substrate but it has certain limitation in terms oí deformation induced during processing due to temperature...
Packaging material is one of the key components for through-silicon via (TSV) 2.5D/3D package giving a strong impact on the higher density integration and its reliability.
The process of picking large thinned dies, as a crucial step of the pre-assembly part in a 3D integration flow, has been investigated in this paper. Key factors affecting the yield of this process are identified to be the selection of correct collet material, the needle configuration, and ejection height. By combining correct tools and optimized process parameters, large 50 μm thick dies with dimensions...
Assembling multi-layer thinned Si chips to form 3D ICs in a fast, reliable, and cost-effective manner is one of the key processes to enable wider application and commercialization of 3D integration. In this paper the essential aspects of process development for stacking multi-layer 3D ICs are investigated. Combining thermo-compression bonding (TCB) process and the usage of pre-applied wafer-level...
Wafer reconstruction is a process of forming an integral handle-able wafer by filling the gaps between the dies after die-to-wafer assembly to allow for further processing on the landing wafer, e.g. thinning, redistribution layer deposition, and bumping. This paper examines key aspects and challenges of different wafer reconstruction process flows. Based on analytical and finite element method modeling,...
Requirements for thermocompression bonding (TCB) successfully are dependent on the material as well as the area required to join. One of the paths for 3D integration is bonding Cu to Cu bumps or TSV's to bumps. A second path is by integrating fine pitch high density array of bumps, which may equate to >37000 bumps in a 8×8mm die size. Both require a significant amount of pressure as well as temperature...
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