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Designing an advanced, miniaturized and reliable system utilizing RFIC and MMICs technologies and packaging design are reaching an inflection point where simulation results from multiple CAD tools are to be cobbled together to predict the performance. Operating at higher frequencies, shrinking the system size, tightly integrating more functionality on chips and dense packaging schemes trigger more...
System integration takes benefit from 3D stacking technologies in a wide range of applications such as smart imagers, photonics, stacked memories, mobile applications and high-performance computing. Several integration schemes are considered worldwide to address applications specific requirements: performance, cost, form-factor, thermal management or even supply chain availability. This paper presents...
In this work, a 3-D IC architecture is proposed that composes an odd tier-number to provide enough flexibility to a circuit block at a specific tier to connect blocks at all other tiers. For a three-tier structure, it provides flexibility to a circuit block at the bottom or top layer in order to simultaneously connect blocks assigned to other layers. Such architecture would result in lower thermal...
Three-dimensional (3-D) integration with through-silicon-vias(TSVs) has been laid high expectations in overcoming further miniaturization obstacles faced by conventional 2-D integrated circuits (ICs) and solving compatibility problems of system integration among heterogeneous chips. We have proposed a simple but feasible process named “vacuum-assisted spin coating” for the fabrication of high aspect-ratio...
Packaging of 2.5D/3D applications is disrupting the high-density advanced package (HDAP) segment as silicon and packaging processes converge to deliver fan-out wafer level (FOWLP) and interposer based solutions. Silicon foundries are now in the package supply chain and driving methodology changes that impact manufacturing data formats, and how that data is accepted and verified.
Heterogeneous integration delivers “the best junction for the function” to achieve the highest performance by utilizing a known good die strategy. However as technology emerges with more complex systems, die-package co-design becomes a mandatory aspect in the design phase to mitigate risk and foresee results before the entire system is built. Various aspects of such design is reviewed in this work...
We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node logic wafers after metal-4. This late-TSV-middle approach offers the ability to build 3D technology into commercially available 90nm-node CMOS, while avoiding many of the challenges associated with TSV-last integrations. We also demonstrate a TSV-reveal...
This paper presents a part of a cellular transmitter chain implemented in a 28 nm CMOS 3D integrated circuit vertical stack. The design examines various partitioning topolgies between the analog and digital blocks. By using extensive reconfigurability we are able to create a basis for comparison between the partitions as well as between other partitioning solutions as multiple chip, single chip and...
In this paper, we explore the design considerations of two approaches to 2.5-D integration (silicon interposer and bridge-chip) from a thermal perspective and compare to 3-D ICs. Moreover, the impact of die thickness mismatch and die spacing are investigated in 2.5-D systems. We conclude that the die dissipating the largest power should be the thickest in a multi-die package. Larger lateral spacing...
The integration of Through-Silicon Vias (TSVs) in CMOS wafers has the potential to cause performance shifts of devices in close proximity due to mobility change caused by mechanical stress. To ensure successful integration of TSV into a baseline technology, these shifts must be negligible to allow seamless integration of TSVs into circuit designs. As the first publication of its kind by an advanced...
A breakthrough in vertical stacking and bonding method in flexible substrates is developed and presented in this paper. Unlike current ACF and NCP approaches, which are used in most manufacturing industry, our novel stacking method uses only metal thin film as bonding material. Two different bonding material bumps are carried out in our experiment. Both show better electrical and reliability outcomes...
CoolCube™ is a monolithic 3D technology which has the potential to solve the interconnection density limitation of the existing TSV-based 3D integration processes. Since the active devices are fabricated on extremely this die substrates, heat dissipation has been pointed as a potential showstopper issue for this emerging technology. This work provides a comparative study of the thermal performance...
As the density of 3D interconnects is increasing exponentially when scaling to lower levels of the interconnect wiring, in most cases 3D interconnect pitches of 5 μm and below will be required. Dielectric wafer to wafer bonding with via last integration can offer these interconnect densities. Wafer-to-wafer alignment and its impact on via last alignment are discussed. By taking into account current...
After many years of packaging evolution as main industrial driver for 3D integration, even denser integration scheme have gained recently more interest. Slowdown of Moore's law while maintaining the need of high performance and/or low power from one hand, and a combination of performance / form factor from the other, lead research to innovation and alternative solutions.
This paper presents experimental results for a prototype pixel detector with 3.0-μmφ gold cone bumps fabricated by NpD (nanoparticle deposition) and Stacked CdTe/Si X-ray sensor TEG with gold cylindrical bumps fabricated by a low-incident-angle deposition method. The both bump resistances are less than 0.5ohm.
As the 3D interconnect density is increasing exponentially when scaling to lower levels of the interconnect wiring, we see that very soon 3D interconnect pitches of 5 μm and below will be required. Current 3D-SIC (3D-Stacked IC) technologies do not yet offer such interconnect densities and it is expected that most of the 3D-SOC (3D System On Chip) integration technology schemes will require a wafer-to-wafer...
This paper presents a die-level post-CMOS processing protocol for multi-layer homogeneous 3D integration with adhesive bonding technique using parylene-C as an intermediate bonding layer and sidewall passivation material. This protocol was used to fabricate 4-layer CMOS memory chip stacks, which were then packaged and tested using time domain reflectometry (TDR) measurement technique. The results...
In this paper, heat transfer in 3D IC system is investigated using practical and novel materials for Inter Layer Dielectric (ILD) and Thermal Through Silicon Vias (TTSV). The currently used SiO2 ILD is amiss for heat mitigation due to its poor thermal conductivity. The unique thermal and electrical properties of Hexagonal Boron Nitride (h-BN) are explored in this work for improved heat mitigation.
This paper is dedicated to modeling, design, fabrication and characterization of TSV with embedded capacitor, which integrates a TSV and a 3D MIM capacitor into the same trench. An effective capacitance density of 35nF/mm2 has been demonstrated for the embedded capacitor, which closely matches 37nF/mm2 from analytical prediction. It is found that conventional sputtering technology is inadequate for...
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