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This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have...
We developed a fully flexible AM (amplitude modulation) radio receiver suitable for integration in an “audio bag”, by exploiting the heterogeneous integration of several fully flexible technologies. In this paper, we present a 2.9 mW 2-bit digitally-controlled tuner with a 576 kHz tuning range, a 3.5 mW 1 MHz AM detector and their integration in such a fully-flexible system. Their optimized power...
In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 µm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation...
This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common-source circuit for the baseband amplification. The measured conversion gain is very flat against frequency and exceeds 15 dB for carrier frequencies ranging from 2 to 20 MHz, which covers a relevant...
This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common source circuit for the baseband amplification. The measured conversion gain is very flat and exceeds 15 dB from 2 to 20 MHz carrier frequency range, which covers a relevant portion of the shortwave...
This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common source circuit for the baseband amplification. The measured conversion gain is very flat and exceeds 15 dB from 2 to 20 MHz carrier frequency range, which covers a relevant portion of the shortwave...
To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain,...
This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 µm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and...
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