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Organic-Inorganic or (Hybrid) perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics (1), light emitting diodes(2), photodetectors(S), thermoelectric devices, lasers(⁁), photo-catalysts(5)...
Corning has developed three generations of polymeric organic semiconducting (OSC) materials, each with progressively improved electronic performance and processability. These materials possess excellent solubility, mobility and stability. Stanford University has developed a new polymer dielectric material based on a fluoroelastomer. Combined with Coming's OSC polymers, this enables easy to fabricate...
New technique to measure local photovoltaic properties of Si based thin film solar cells has been developed using scanning probe microscopy technique. Local photovoltaic properties of hydrogenated amorphous silicon (a-Si:H) thin film solar cell was demonstrated using this technique. Short-circuit current obtained from local current-voltage (I-V) characteristics with light irradiation increased with...
Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C...
Film density of amorphous In-Ga-Zn-O (a-IGZO) was varied in a wide range to investigate the origin of the low film density and its effect on thin-film transistor (TFT) characteristics. Device-quality a-IGZO films have the densities ∼ 6.1 g/cm3, which is ∼5% smaller than that of single-crystal InGaZnO4 (c-IGZO) (6.4 g/cm3). On the other hand, extremely low density of 5.5 g/cm3 was obtained when the...
We have developed a high-definition in-cell (HDI) touch panel technology that uses a parallel scanning method. This technology can be incorporated into various TFT backplanes including LTPS TFT and IGZO TFT. We have developed 5.7” WQHD LTPS LCD and 4.95” FHD IGZO LCD, both of which are integrated in-cell touch panels. A Nega-type liquid crystal (LC) material for IPS mode was used. The parallel scanning...
Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility...
This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have...
This paper describes device modeling of FeS2 thin-film solar cells by device simulation to investigate the cause of 0% conversion efficiency from the reported device structure. We demonstrated that the reported device didn't form a suitable structure as a photovoltaic device. In order to achieve FeS2 photovoltaic device, we suggested that obtaining not only suitable band structure but also suitable...
The all-solid-state electrochromic device (ECD) integrated with near-IR (NIR) blocking layer has been developed for image sensor and energy-saving glass application. The all-solid-state ECD integrated with NIR blocking layer could potentially control the transmittance from 70.5% to 17.5% at 550nm in the visible region and from 39% to 9% at the NIR wavelength larger than 1100nm. The NIR blocking all-solid-state...
While nanostructured surface such as black silicon is an efficiency way to reduce the surface reflection, the high surface area impedes the application of photoelectronic conversion. On the other hand, micropillar is a promising alternative to efficiently collect carriers, but the pillar diameter is usually larger than the wavelength of light that makes surface reflection high. In this study we report...
The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the...
This study presents an electrical characterization of multi-thin-film metal electrodes deposited on flexible substrates by using an automatic folding test system (AFTS). To quantize folding conditions, AFTS for folding function is utilized to control radii of curvature of the flexible substrates, folding times, and velocities. Additionally, AFTS measures the electrical characteristics of flexible...
We report diffusing boron and phosphorus dopant atoms in silicon with impurity sources of BOx and POx layers formed on the top surfaces of n- and p-type crystalline silicon substrates. The silicon samples with impurity sources were subsequently covered with carbon powders to effectively absorb 2.45 GHz microwave power. Microwave irradiation at 1000 W for 27 s rapidly heated the carbon powders to 1265°C...
A novel pressure sensor based on indium gallium zinc oxide (IGZO) oxide TFT and strained piezoelectric polymer is demonstrated. Poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) is used as an organic piezoelectric material. The sensor demonstrate the possibility to be further used as a display polarizing film though a birefringence property showed by stretching the P(VDF-TrFE) film. Finally,...
The electroluminescence (EL) emission patterns of organic light-emitting transistors (OLETs) based on crystallized poly(9,9-dioctylfluorene) (F8) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films are investigated. The F8/F8BT bilayer OLET with heterostructure exhibited unique light emission properties with surface-like light-emitting pattern between source/drain (S/D) electrodes at lower...
High-performance poly-Si nano-wire transistors were fabricated by Advanced SPC process, that consists of optimized a-Si deposition, crystallization annealing and poly-Si thinning processes. In order to determine what the dominant factor of scattering mechanism is, carrier mobility behavior at each temperature and surface carrier density (Ns) are fully investigated. It reveals that the hole mobility...
(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction...
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