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In this work we present a novel technique to fabricate embedded 3D MIM capacitor on Si interposer showing capacitance densities as high as 96 nF/mm2 and low leakage current of 1.5 pA/nF, while having a breakdown voltage of 10.5 V and > 10 years lifetime (T50%@1V, 100 ˚C = 5.18e16 s).
Three modifications of the structure of a 4 BEOL layers with 10×100µm TSV Si interposer are proposed to mitigate the tensile stress and release the interposer warpage. By using a thicker compressive PMD layer, reducing Metal1 thickness and using a higher compressive oxide to build the BEOL, the bowing contributions of the TSV, Metal1 and Via2 to Metal4 were reduced by 75%, 37% and 120% respectively...
An analytical model simulating the bowing at wafer or thin die level was applied to imec's 3D interposer technology. The calibration methodology is explained. A good correlation between simulation and measurement has been found at different stages during the processing. Secondly, a model combining all the interposer features was used to simulate the bowing induced at wafer and thin die level. Finally,...
Silicon Interposer provides very high density interconnect combining through Silicon vias and fine wiring. The concept reported in this paper is implementing integrated power supply layers with decoupling metal insulator metal decoupling capacitor to enhance signal integrity. In addition an upscale damascene process was used to fabricate high density and high bandwidth routing interconnect. A detailed...
The establishment of a cost-effective Through Silicon Vias (TSV) fabrication process integrated to a CMOS flow with industrially available tools is of high interest for the electronics industry because such process can produce more compact systems. We present a 300mm industry-compliant via-middle TSV module, integrated to an advanced high-k/metal gate CMOS process platform. TSVs are fabricated by...
In this paper, we show that substrate charging is another possible failure mechanism limiting the lifetime of capacitive RF MEMS switches. Switches fabricated on different substrates can exhibit a different lifetime. Also the influence of environmental conditions on the lifetime can depend on the type of substrate. In addition, we show that switches actuated with an actuation voltage below pull-in...
This paper discusses dielectric charging in electrostatic RF-MEMS switches. We show that more than one charging mechanism can be present and impacts their lifetime. These different mechanisms can cancel, mitigate or enhance each otherpsilas influence on the lifetime, depending on the materials used and on the test conditions. Contrarily to the common understanding of the dielectric charging, we show...
We show for the first time that the substrate can influence the lifetime of capacitive RF MEMS switches. We demonstrate that the influence of the substrate should not be ignored. The influence of the environment on the lifetime of a switch is different when it is fabricated on two different substrates. We also present that a switch actuated with a DC voltage lower than the pull-in voltage can pull-in...
This paper presents a novel electrostatic actuator using fringing fields as actuation mechanism, ie electrostatic fringing-field actuator or EFFA. The novel device is produced on an insulating substrate in a simple 2-mask process involving only one sacrificial layer and one metallisation. As a proof of concept, we produced and characterized EFFA-based tuneable RF devices and circuits in various technological...
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