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Thin film SOI is a key technology for wireless and RF applications. We demonstrate the successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on thin SOI. The process option introduced in this node enables to achieve high device performance: due to the new well patterning strategy, the main transistor figure of merit is improved.
This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.
This paper presents reliability investigations in NLDEMOS transistor in 0.13μm SOI CMOS technology. Reliability tests under hot carrier injections (HCI) for different gate-lengths show two different degradation mechanisms. The modification of current path with short overlap (Olap) due to oblique equi-potential lines and the increase in the vertical electrical field under the gate edge at low V g lead...
We demonstrate the integration, in 0.13μm thin SOI CMOS technology, of low-cost high-performance high-voltage LDMOS and HBT transistors. These specific devices are obtained, without affecting CMOS core process devices. Static and dynamic characteristics for both type of transistors are presented, showing state of the art devices suitable for RF/analog/digital system on chip integration.
Self-heating is evaluated in high-voltage devices from a 0.13 mum thin-film SOI CMOS technology. Our measurement procedure is described. The influence of different parameters such as layout variations is finally investigated, and main results are shown here. A strong linear correlation between the thermal resistance and the reverse of the active surface is demonstrated. Besides, a moderate impact...
This paper presents new reliability investigations in NLDEMOS transistor in 0.13 mum SOI CMOS technology. Reliability tests under hot carrier injections (HCI) and OFF state regimes show a strong dependence with the drain extension length Lext. The use of borderless nitride in order to create contacts is suspected to be the origin of degradation. Mobiles charges in this nitride can move under electrical...
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