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Designers of Microwave systems are constantly looking for DACs which provide not only Nyquist zones larger than 2.5 GHz but which also offer flat frequency response in these large instantaneous bandwidths, and in addition which also generate these signals with a centre frequency that is in the frequency band of interest. The component's performance can have strong implications in how microwave systems...
Al2O3/InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al2O3/InGaAs interface quality with a low Dit value (∼3×1012 cm−2eV−1), and passivated border traps.
In this paper, we describe the development of a pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. The device physics and the impact of the valence band barriers taking place in pnp HBTs are detailed. The Ge and impurities profiles optimization necessary to limit their negative influence is particularly described. Static and dynamic device characteristics are discussed.
This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.
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