The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
State-of-the-art semiconductor devices with feature sizes in the deca nanometer regime require extremely shrinked geometries for their interconnect structures. Since various physics-based limits are already reached or, at least, rapidly approached, new materials are considered. The arrangements of these new materials can often not yet be rigorously described due to limited knowledge and limited resources,...
A new voltage comparator was presented, using exclusively MOS transistors working in the saturation region for improving the circuit speed. In order to increase the controllability of the proposed voltage comparator and to achieve the possibility of comparing differential voltages, FGMOS (floating gate MOS) transistors were used to replace classical MOS active devices. An original method for reducing...
This contribution presents a novel simulation tool for the electrothermal analysis of solid-state devices and circuits in both static and transient conditions. The code relies on an effective analytical approach to describe the 3D thermal process, and exploits the engine of the commercial software ADS (Advanced Design System) to consistently solve the electrical and thermal networks. Features like...
Methods for predicting and analyzing the behavior of NTC thermistors have remained the same and they typically include accurate measurements of resistance and temperature, followed by curve-fitting methodologies for determining the relationship of temperature to resistance for similar thermistor devices. In this paper, new approach based on using commercial software tools was applied on the thick...
An original active resistor circuit was presented in this paper. The main advantages of the new proposed implementations are the improved linearity, the small area consumption and the improved frequency response. An original technique for linearizing the I(V) characteristic of the active resistor was proposed, based on a parallel connection of two quasi-identical circuits opposite excited and different...
This work presents simulation of the crosstalk introduced by wiring in CMOS integrated circuits. Interconnections are modelled as lines with distributed parameters. Simulation results are shown on practical example. An electromagnetic simulator was used for calculation of coupled capacitances between conductors followed by the OrCad PSpice simulation to obtain the waveforms of output voltages on each...
In this paper artificial neural networks (ANNs) are applied to diagnosis of catastrophic defects in the digital part of a nonlinear mixed-mode circuit. The approach is demonstrated on the example of a relatively complex sigma-delta modulator. A set of faults is selected first. Then, fault dictionary is created, by simulation, using the response of the circuit to an input ramp signal. It is represented...
An excitation of ultra-high frequency (100 MHz-1 GHz) nonlinear solitary acoustic waves, propagating along the interface between a solid film and a solid substrate, is theoretically analyzed. A quadratic elastic nonlinearity in both contacting media of the system is taken into account in the case of baseband waves. The Benjamin-Ono (B-O) type equation, due to the character of the linear wave dispersion,...
This work is motivated by interest to the waveguide geometry which is attractive because it allows the surface polariton (SP) sensors to be incorporated into the integrated optical system. Inclusion of additional covering and/or (intermediate) dielectric (SiOx; x=2) and/or conducting (ITO) (tuning) layers in geometry with diffraction grating (DG) as input-coupling component to excite SPs is useful...
In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss the modeling of the recombination term in the charge transport equations for each type of carriers that respects the charge conservation law. It was obtained that under stationary conditions and equal generation rates of electrons and holes the recombination rates...
A novel physical device model was developed for designing a low-noise-application-oriented HEMT structure and modeling a high-frequency noise characteristic of HEMT. To calculate accurate noise figure as a figure-of-merit indicating the high-frequency noise characteristics, two factors were considered based on Ando's model: (1) The parasitic effects which are more dominant at higher frequency, including...
We have investigated the dependence of optical, photoelectric and electrical characteristics of heteroepitaxial AlxGa1-x As/GaAs structures on active interface microrelief morphology. Experimental study of heterostructures included analysis of surface microrelief parameters by AFM techniques, measurements of specular and diffuse reflection spectra, the dark and light current-voltage (I-V) characteristics...
This paper introduces reordering method in topology decision diagram (TDD) in order to enhance symbolic analysis method for RLC gm network function generation in nested form. The improvement is obtained in circuit function compression and the execution time. An example of n-th order ladder network illustrates the method
The hardware description language Verilog-A is today de facto the standard language for compact circuit and device modeling and it is implemented in almost all major commercial SPICE-like circuit simulators. The goal of this paper is to present the principles and techniques for implementation of various circuit and device modeling constructs in Verilog-A. Practical examples include a mixed lumped...
The present work proposes the design of an enhanced driver for magnetic storage write heads to be employed in mini- and micro-drive applications. It is intended for running from a reduced-voltage supply (as commonly found in portable devices) with low power consumption, yet retaining an excellent write speed performance, and is thoroughly programmable. Although originally developed in BiCMOS technology,...
This paper presents a new circuit model for Class-A power amplifier (PA), which can be used to guide design of fully-integrated PA by accurately estimating the optimum load resistance (Ropt), hence to achieve optimized PA performance, e.g., gain, output power (Po), power-added efficiency (PAE) and harmonics, etc. A new figure-of-merit (F) is introduced as a design criterion in practical PA design...
The paper presents a specific approach to SoC design, aimed to provide a library of configurable, extensible, and reusable modules (processors, various hardware cores, memories, etc.) for wireless applications. It familiarises you with the concept of library and its hierarchy. It also describes how to specify, synthesise, layout, verify, and reuse the library modules
In this paper we present a new approach to the analysis of digital switching noise, by modeling it as a stochastic process. As well known, a pre-layout estimation of digital switching noise is a very difficult task. Therefore, mixed-signal IC design would benefit from a simple model that uses few parameters and allows to estimate digital switching noise with an acceptable level of approximation
In this paper, a comparison of gold, nickel and aluminium Schottky diodes fabricated on high-quality, single-crystal CVD diamond is presented. Different metals, such as gold, nickel and aluminium, have been deposited on the oxidised surface of an intrinsic diamond layer to serve as Schottky contacts, in order to investigate the physical properties of the different metal-semiconductor interfaces. A...
In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 degK...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.