The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Being an advanced application of SEM based Nanoprobing tool, Electron Beam Current (EBC) is commonly applied for detecting test-key failure or LBIST scan failure. In this paper, EBC is employed with TIVA (Thermal Induced Voltage Alteration) to diagnose the chip level Pin high resistance failure related issue.
The wreckage of mechanical elements caused by the wear has been thought as an important problem for the mechanical engineers. Hence, it is necessary to improve the material properties of mechanical elements for the purpose of wear resistance. Moreover, low friction always plays an important role for saving energy. The technologies of materials science and surface engineering have been used widely...
The electromigration test of the microbump interconnects with Cu/Cu6Sn5/Cu structure is reported in this study. This Cu6Sn5 intermetallic compound layer was single-crystal like. The diameter of the microbumps in die-to-die stacking was 30 µm. Test vehicles were applied by a current density of 2.2×105 A/cm2 and settled on a hotplate at 150°C. The resistances of the microbumps were simultaneously monitored...
Theoretical calculation and simulation of FEM were proposed to explain the decline of change in resistance in Cu-Sn microbumps during the electromigration test. The IMC transformation from Cu6Sn5 to Cu3Sn was supposed to be the reason. Being aware that the dimension keeps shrinking, the behavior for various solder diameters was also investigated.
In this study, we use the Cu/SnAg/Ni/Cu joint with a thickness of 7μm/8μm/2μm /5μm and 7μm/16μm/2μm /5μm. The diameter of the solder joint is about 30 μm and the UBM opening is 18 μm in diameter with 60 μm pitches. In order to measure the resistance changes, it was fabricated which constitute four probes. By using this method we can measure the resistance changes in microbump excluding the resistance...
In recent years, thermal management, which improves the reliability, performance, power leakage, etc. of modern microprocessors, has been the subject of numerous computer architecture and system software studies. To determine the detailed thermal distribution of a microprocessor is among the critical tasks for thermal management. However, because thermal modeling tools require considerable computation...
Three dimensional integration circuits technology has received much attention recently since the demands of functionality and performance in microelectronic packaging for electronic products are rapidly increasing. For high-performance 3D chip stacking, high density interconnections are essential. In the current types of interconnects, solder micro bumps have been widely used and thermocompression...
Recently, three dimensional integration circuits technology has received much attention since the demands of functionality and performance in microelectronic packaging for electronic products are rapidly increasing. For high-performance 3D chip stacking, high density interconnections are required. In the current types of interconnects, solder micro bumps have been widely adopted. For fine pitch solder...
In this work, we investigated the effects of drift region resistance on the temperature behaviors of RF power LDMOS transistors. Devices with various implant doses in the drift region were fabricated. Owing to the quasi-saturation effect, the transconductances at high gate voltages are less dependent on the temperature for low-drift-dose device. In addition, the maximum oscillation frequency exhibits...
As the demands of functionality and performance for electronic products increase, three-dimensional chip stacking with high-density I/O has received much attention. For high density interconnections packaging, solder micro bumps are adopted extensively. However, its process temperature is high during chip stacking process. High bonding temperature would be easy to lead chip damage and chip warpage...
As the demands for high density 3DIC stacking increase, a fine-pitch chip-to-chip interconnects is becoming imperative. In conventional flip-chip technology, anisotropic conductive film (ACF) has been used in place of solder and underfill for chip attachment to substrates in some applications, because it provides many advantages. Generally speaking, ACF consists of an adhesive polymer matrix with...
The development of portable and flexible liquid crystal displays (LCDs) has led to a change in the substrate panel material. In the driver integrated circuit (IC) packaging process, ultra-thin chip on plastic (UTCOP) bonding is required to impart flexibility to plastic LCDs. In his study, the performance of 50-μm-thick ultra-thin chips on transparent polyimide (PI) substrate was investigated. To study...
Recent developments of nanofabrication have enabled the miniaturization of electronic devices, allowing more electronic devices to be combined into a single device with a high performance. However, the complex devices have led to the escalation of power dissipation as well as the increasing heat flux at the interface between devices. Electronic devices were damaged by much heat accumulation, since...
This paper presents a BRC technique to speed up the charging time of the Li-Ion battery. Based on the physical properties of the battery cell, the charger circuit charges the cell with three stages, which are trickle current (TC), constant current (CC), and constant voltage (CV) stages. Due to the internal parasitic resistance of the Li-Ion battery pack system, the charger circuit switches from the...
In this paper, the compensation of internal resistance of the Li-Ion battery is proposed. The requirement of fast and steady charger becomes the most important issue for power management ICs. Refer to the characteristics of the battery, how to charge the battery with adequate current and fasten the time of charging is critical to the devisers. Due to the impedance of battery pack, the energy of charger...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.