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An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (VTH) of +7.6 V obtained in the Al2O3/GaN MOSFETs. The positive interface charges were proposed originating...
Based on a long-term investigation of material growth and fabrication procedure, the cryoHEMTs (Cryogenic High Electrons Mobility Transistors) made at the CNRS/C2N (formerly LPN) are now in the process to fill the gap of the FET (Filed-Effet Transistor) for high impedance, low-power and low-frequency deep cryogenic readout electronics. Different input capacitance cryoHEMTs have been fabricated and...
An efficient approach to engineering the AhOß/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of Qit+ from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (Vth) of +7.6 V obtained in the AhOß/GaN MOSFETs. The positive interface charges were proposed originating from the N-vacancy and...
Many of the design companies cannot afford owning and acquiring expensive foundries and hence, go fabless and outsource their design fabrication to foundries that are potentially untrustwrothy. This globalization of Integrated Circuit (IC) design flow has introduced security vulnerabilities. If a design is fabricated in a foundry that is outside the direct control of the (fabless) design house, reverse...
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing degradation. A simple electrostatic argument showed that the GAA device had smaller degradation...
We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET, the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point...
We report on a spectroscopic electroluminescence study at cryogenic temperatures of InP based high-electron-mobility-transistors (HEMT's) with ultrashort gate length. Both low energy (0.7-0.9 eV) and high energy (1.3-2.2 eV) recombination bands are observed and are related to radiative recombination of carriers created by impact ionization. At low energy, the evolution of the luminescence as a function...
The analysis of high frequency parameters of pseudomorphic HEMTs (PM-HEMT) at cryogenic temperatures and different gate lengths 0.1??m to 0.7??m, compared to existing modeling data, points out the improvement of average carrier velocity transport at low temperatures, the larger relative importance of certain parasitic effects (lateral diffusion under the gate, fringe effects, electrostatic capacitances)...
High performance ??-doped double recess 0.1-0.4??m AlGaAs-GaAs S-HEMTs[1] and ??-doped single-recess 0.1-0.7??m AlGaAs/GaInAs/GaAs PM-HEMTs [2-3] are studied from 300K down to 60K. DC and 0.1-40GHz HF measurements followed by electric parameter extractions give extensive evolutions of HEMT electric parameters versus temperature T, gatelength 1g. The results are interpreted in terms of the transition...
We present a coordinated experimental and theoretical investigation of the parameter evolution of ultra-short gate HEMTs down to 0.1??m gate-length, and of the physical and electrical limitations to performance improvements. The study encompasses a broad range of well qualified situations allowing comparisons with previous investigations[1-4]. The main features are,- the exploitation of two reliable...
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