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V-groove trench MOSFETs with a 4H-SiC{0-33-8} face as the trench sidewall for the channel region and a buried p+ region in the epitaxial layer have been investigated. The on-resistance and breakdown voltage strongly depend on the aperture ratio of the buried p+ regions. The VMOSFETs with the buried p+ regions of 71% on a 6-inch wafer exhibited a low specific on-resistance of 2.0 mΩ cm2 with 1200 V...
After experiencing strong growth for several decades, the semiconductor industry has gradually transitioned to a mature industry. Overall market growth has substantially moderated; the global market is expected to grow at just 0.3% next year to reach a value of $341 billion, compared to a 7.6% compounded annual growth rate from 1990–20151. At the same time, the amount of capital and time required...
Electric vehicles (EVs) will be one of the core next-generation automotive technologies. This paper presents an overview of EV development. For the on-board power electronics of EVs, it is necessary to reduce their size, lower their cost and increase their efficiency. Wide bandgap (WBG) power devices are expected to be used to attain these aims. Packaging technologies need to be considered for using...
The development history and the status of both power electronic devices (PEDs) and their application in power grids are briefly reviewed in this paper. From the application point of view, the evolution of both modification and improvement of the main circuit topologies propelled by the development of PEDs is analyzed and summarized. The application of PEDs to Flexible AC Transmission Systems (FACTS)...
There is an ongoing demand for increased power density and efficiency along with lower costs of converter systems and shorter development time for specific applications in the field of power electronics. In order to expedite the technology development Google and IEEE initiated the Google Little Box Challenge (GLBC) including $1 million prize money. Aim of the GLBC was to build the worldwide smallest...
A new gate recess process technology has been implemented in normally off GaN based gate injection transistors (GITs) on Si substrate, in order to realize the process stability. In this process, compared to conventional recessed gate structure, the AlGaN barrier is fully removed in the gate region and then AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, standard...
A new methodology is presented that directly extracts the location and amount of trapped charge in GaN HEMTs by making use of a special test structure with an additional sense node in-between the gate and drain. The technique is validated on three wafer types: one for which trapping predominantly occurs in the GaN epitaxy, one with both epitaxy trapping and surface charge injection, and one for our...
In this work, static and dynamic characteristics of an AlGaN/GaN-on-Si power field-effect transistor (FET) with the integrated photonic-ohmic drain (POD) were systematically investigated. With the photon generation and channel current inherently switched ON and OFF in synchronization, dynamic performances (e.g. dynamic ON-resistance) of the PODFET can be significantly enhanced owing to photon pumping...
This paper presents a detailed study of the failure mechanisms induced by a forward bias overstress on gallium nitride (GaN) high electron mobility transistors (HEMTs) with p-type gate. DC measurements demonstrate that GaN-HEMTs with p-GaN gate show a time-dependent catastrophic degradation when submitted to forward-gate overstress. Time to failure (TTF) can be described by a Weibull distribution...
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