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The talk will describe current research efforts conducted in PICs using III-V semiconductors, mostly InP. Emphasis will be placed on the design issues and on the technological challenges for finding simple ways to optically interconnect such diverse components as lasers, modulators, waveguides and detectors on a single chip. Characteristics of the current generation of research prototypes will be...
A cellular-automaton (CA) approach for solving the Boltzmann equation is presented and applied to semiconductor device simulation. The comparison with Drift Diffusion and Monte Carlo (MC) algorithms shows the capabilities of the CA as a modelling tool, even in the presence of complicated geometries and hot carrier effects. With respect to the MC method, the CA exhibits a speed up of two orders of...
The use of CMOS-compatible lateral bipolar transistors in various applications makes it necessary to be able to estimate the splitting of the collector currents by means of an analytical model. In this paper, we present such an analytical 2D-model that was derived using conformal mapping techniques. It allows for the geometry-dependent calculation of vertical and lateral currents including their dependance...
A quantitative analysis of the effects causing the maximum cutoff frequency reduction as horizontal device dimensions are downscaled is carried out. Simple analytical expressions describing the geometry dependence of the maximum cutoff frequency fT and forward transit time are derived, and verified with numerical simulations. These expressions suggest a simple method to extract the values of the maximum...
This paper discusses the low-frequency noise behaviour in partially depleted SOI MOSFETs. It is shown that while the noise in linear operation is little affected by using the twin-gate structure, a drastic reduction of the kink-related excess noise is observed, compared with a standard transistor. This reduction is explained by considering a recently proposed model for the low-frequency noise overshoot...
This paper discusses the low-frequency noise behaviour corresponding to Random Telegraph Signals in submicrometer Si MOSTs. It is shown that when the noise spectral density is measured as a function of the gate voltage (linear operation) or of the drain voltage, peak-shaped features are generally obtained. This excess-noise peak can be used to identify the occurrence of RTS, for instance in Silicon-on-Insulator...
In this paper, the influence of the gate leakage current on the noise performance of MESFETs and MODFETs is investigated. The theoretical results are discussed and it is shown that the noise performance of FETs is strongly dependent on the gate leakage current value, especially at a few GHz.
First results on low-frequency noise (250 Hz-100 kHz) and microwave noise parameters (4 GHz-20 GHz) observed in a microwave Si/SiGe heterojunction bipolar transistors (1 ??m ?? 20 ??m) featuring current gain cut-off frequency of 90 GHz and a maximum oscillation frequency of 30 GHz are reported and discussed. All measurements have been performed on wafer using dedicated techniques.
In this work the hot carrier effects in polycrystallinethin-film transistors, mainly related to hot-holes, are analysed by using a two-dimensional device analysis program. The experimental results have been interpreted in terms of formation of trap centers in the gate oxide and interface states. Furthermore, the theoretical analysis of alternate stresses allowed the determination of the extension...
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