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A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and...
A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched on InP HEMT circuit. The HEMT structure is first grown by MBE and exhibits a Hall mobility in excess of 11000 cm2/Vs with a ns of 2.6.1012 cm??2 at room temperature. After the patterning of these epilayers, the p-i-n diode structure is selectively regrown by CBE using SiO2...
A program has been developed that can model the static characteristics of Double Barrier Resonant Tunneling (DBRT) diodes. This device can be considered to consist of the actual barrier structure and two reservoirs from which electrons can tunnel. Under bias one reservoir will be accumulated, the other one depleted and electrons will tunnel mainly from the former to the latter. The accumulation region...
This paper describes a CMOS technology designed for static RAMs and microprocessors operating at 3.3 V. The technology features dual-work-function NFETs and PFETs that achieve 0.22 and 0.18 ??m minimum channel lengths, respectively. It also includes shallow-trench isolation, nitrided oxide for reliability, self-aligned titanium silicide diffusions and polysilicon, a damascene tungsten local interconnect,...
Liquid Crystal (LC) over silicon spatial light modulators (SLMs) have the potential to be used in miniature head mounted displays and in compact projection display systems. For this application the silicon backplane design is invariably based on a single transistor DRAM memory layout which offers the potential for very high resolution devices. However, a problem arises when these devices are incorporated...
This paper presents an enhanced methodology for statistical worst-case simulation which accounts for the effects of statistical fluctuations in IC manufacturing processes. The inclusion of important SPICE model parameter correlations and the application of second order regression models give both realistic and more accurate worst-case parameter sets. Furthermore, a realistic prediction of circuit...
A silicon 50-??m-long Fabry-Perot waveguide modulator, based on the thermo-optic effect and electrically driven, has been entirely fabricated using microelectronic techmiques. The device is thought for direct integration with electronic circuits because the planar optical cavity has been defined by plasma etching and not by cleaveage of the chip. Operation at frequencies up to about 2 MHz has been...
A medium power (80V, 50A pulsed) Silicon double thyristor with turn-on speed of 10ns range has been designed and fabricated. The integrated launching thyristor allows to trigger the device with a low signal of CMOS logic output range, so that the resulting gate turn-on charges are at least a factor of 1000 smaller than the equivalent power MOS transistor gate-control charges. The high tum-on sensitivity...
The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future DRAM products should be equipped with the capabilities of low voltage operation and high speed, too. This paper presents overview of process technology...
Second breakdown in forward-biased power transistors limit the safe operating area. This kind of failures depend on the interaction between the thermal and the electrical fields inside the chip. Moreover the layout seems to play a fundamental role in distribution of current and temperature inside the device determining the onset of the conditions to establish the current crowding and subsequent hot...
In this paper we report a physically based thin gate oxide MOSEET model for ULSI circuit simulations. It is shown that to accurately model current and capacitances in these devices down to 0.1??m channel length, one must use effective gate oxide thickness that is larger than the physical thickness in the classical MOSFET circuit models. The increase in the effective Tox from its physical value depends...
A generalized version of the small-signal drift-diffusion model accounting for trapped charge dynamics is presented; the explicit introduction of two new continuity equations for the trapped electrons and holes is avoided by incorporating them in the original three equations, thus allowing for easier implementation while mantaining the same degree of accuracy of the full system. Simulations carried...
Deep impurities like gold or platinum are extensively used in semiconductor technology to improve the switching characteristics of the devices by decreasing the carrier lifetimes. This, on the other hand, has the undesired effect of increasing the material resistivity. Here a complete model is presented, describing the effects of gold/platinum doping on both the steady-state and transient characteristics...
Polycrystalline silicon thin-film transistors (Poly-TFTs) are getting more and more attractive for future, active-matrix, flat-panel displays (AMFPDs) and, more generally, for large-area electronic products. This is due to the relatively-large carrier mobility in polycrystalline silicon, which typically exceeds the amorphous-silicon mobility by two orders of magnitude and makes this material suitable...
Humidity sensors have wide industrial applications in areas such as automobile industry, food processing and evaluation of plastic encapsulations in IC packaging. In this paper we report on the use of porous silicon as a material for humidity sensing. The structure used to detect humidity changes is essentially a parallel plate capacitor, with porous silicon acting as the dielectric. This paper presents...
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