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In this work, an optimized method to extract GIDL parameters has been used to characterize junction quality in FDSOI devices. This paper gives a practical methodology to properly apply this method: first, it insists on the importance to discriminate the respective contributions of GIDL and gate tunneling in drain current. Then, an activation energy criterion is used to determine the bias conditions...
In this paper it is shown that HfO2 and HfZrO oxides suffer from large VT instabilities, up to 230mV, when the device width (W) is scaled down to 80nm. It is explained by undesirable lateral oxygen diffusion through the spacers, which mainly modifies the metal workfunction in narrow transistors. HfSiO(N) oxides exhibit a much better immunity to this effect, attributed to a different crystallinity...
Three-dimensional multi-channel field-effect transistor (MCFET) gate stack and series resistance are investigated and optimized by specifically developed integration processes, characterization methods, and numerical simulations. First, the impact of a TiN/HfO2 gate stack on embedded-gate MCFET structure performance is studied. Both TiN/SiO2 and N+poly-Si/SiO2 gate stacks were introduced in the MCFET...
We demonstrate for the first time 70 nm gate length TiN/HfO2 pMOSFETs on 200 mm GeOI wafers, with excellent performances: ION=330 muA/mum & IOFF=1 muA/mum @ Vd=-1.2 V (without germanide). These performances are obtained using adapted counterdoping and pocket implants. We report the best CV/I vs. IOFF trade-off for Ge or GeOI: CV/I=4.4 ps, IOFF=500 nA/mum @ Vd=-1 V. Moreover, based on fine electrical...
This paper investigates the impact of crystallinity of HfO2 oxides on VT instabilities. Wet etch rate measurements enhances a critical thickness tHKC for HfO2 which marks the transition between a monoclinic crystalline phase to a near amorphous state, both clearly identified by ATR FTIR. Using electrical measurements and modeling, it is demonstrated that this transition from the crystalline phase...
This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm...
For the first time, we report fully depleted SOI MOS transistors with WSix gate on HfO2. Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSix gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically...
In this work, the authors evaluate the potentialities of HfAlO materials as possible candidates for the interpoly dielectrics of future flash memory devices. HfAlO single-layer and oxide/HfAlO/oxide triple-layer stacks were processed and analyzed in terms of coupling and insulating capabilities. The electron conduction modes in these materials, at different temperatures, were also investigated. Finally,...
Many electrical properties of metal/high-k gate stack are dominated by defects. These defects play an important role in reliability issues in particular positive bias temperature instabilities (PBTI). In this paper, we investigate PBTI with a time resolved measurement technique allowing a large-scale time characterization. This technique allows us to separate different mechanisms, namely fast and...
Plasma damages have been studied in HfO2 stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides
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