IEEE Transactions on Electron Devices

article

Contributors

IEEE Transactions on Electron Devices > 1983 > 30 > 2 > 185

article

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

Chen Yu-Zhang, Tang Ting-Wei

IEEE Transactions on Electron Devices > 1988 > 35 > 12 > 2180 - 2188

Based on two-dimensional MOSFET simulation, the substrate and gate currents resulting from impact ionization generated electron-hole pairs and their injection into the gate oxide are calculated. The improved injection model uses a nonMaxwellian distribution function and considers separate contributions to the gate current from both thermionic-emission and oxide-barrier tunneling. A fine structure...

article

Single-crystal zirconium carbide as a high-temperature thermionic cathode material

W.A. Mackie, P.R. Davis

IEEE Transactions on Electron Devices > 1989 > 36 > 1-2 > 220 - 224

Experiments to determine the feasibility of using transition metal carbides as stable thermionic cathodes at temperatures exceeding 2000 K are discussed. The primary emphasis here is electron emission and thermal stability properties of single crystals of ZrC. To obtain accurate emission versus temperature data, the spectral emissivity at 0.65 mu m of single-crystal ZrC specimens was measured in the...

article

Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping

A.M. Joshi, G.H. Olsen, V.S. Ban, E. Mykietyn, more

IEEE Transactions on Electron Devices > 1993 > 40 > 2 > 303 - 308

A significant (2-5*) reduction in 1/f noise was observed in In/sub 0.53/Ga/sub 0.47/As photodetector arrays read out by a PMOS multiplexer, when the epitaxial InP cap layer doping was changed from undoped to sulfur-doped n type of about 3*10/sup 16/ cm/sup -3/. A further decrease was observed when the InP buffer layer was also changed from undoped to sulfur-doped n type of about 5*10/sup 17/ cm/sup...

article

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti, R. Castagne, more

IEEE Transactions on Electron Devices > 1994 > 41 > 9 > 1646 - 1654

In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have been used here to calculate a relatively simple set of transport characteristics, such as the average electron energy. The results have been contributed...

article

Low frequency noise sources in InAlAs/InGaAs MODFETs

P. Viktorovitch, P. Rojo-Romeo, J.L. Leclercq, X. Letartre, more

IEEE Transactions on Electron Devices > 1996 > 43 > 12 > 2085 - 2100

Detailed analysis of the 1/f low-frequency noise (LFN) in In/sub 0.52/Al/sub 0.48/As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz-10/sup 5/ Hz. Experimental data were analyzed with the support of a general modeling...

article

Colored solar cells with minimal current mismatch

I. Tobias, A. El Moussaoni, A. Luque

IEEE Transactions on Electron Devices > 1999 > 46 > 9 > 1858 - 1865

After introducing the numerical relationship between color and current of a solar cell, it is shown that by using thicker antireflecting coatings, it is possible to fabricate different color silicon solar cells with very similar current, only slightly below the one of the best coating. Representative cases of surface structure, cell quality, and materials for the antireflecting layer are considered...

article

Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

Chi On Chui, F. Ito, K.C. Saraswat

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1501 - 1508

In this paper, nanoscale germanium (Ge) oxynitride dielectrics are investigated for Ge MOS device applications. The synthesizing methodology and physical properties of these oxynitride films have been examined first. Basic electrical characteristics have been acquired on metal-gated MOS capacitors with Ge oxynitride dielectric on substrates with different dopant types and crystal orientations. Using...

article

Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networks

J.I. Ababneh, O. Qasaimeh

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1543 - 1550

A simple, accurate, and fast multilayer feedforward artificial neural network (ANN) model for quantum-dot semiconductor optical amplifiers (QD-SOAs) is developed. The developed ANN model has demonstrated excellent precision and accurately models the physical characteristics of QD-SOAs such as pulse amplification and four-wave mixing characteristics. Furthermore, the developed ANN model requires a...

article

Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics

Chi On Chui, H. Kim, D. Chi, P.C. McIntyre, more

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1509 - 1516

In this paper, atomic layer deposition (ALD) and ultraviolet ozone oxidation (UVO) of zirconium and hafnium oxides are investigated for high-kappa dielectric preparation in Ge MOS devices from the perspectives of thermodynamic stability and electrical characteristics. Prior to performing these deposition processes, various Ge surface preparation schemes have been examined to investigate their effects...

article

Vertically integrated amorphous silicon color sensor arrays

D. Knipp, R.A. Street, H. Stiebig, M. Krause, more

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1551 - 1558

Large-area color sensor arrays based on vertically integrated thin-film sensors were realized. The complete color information of each color pixel is detected at the same position of the sensor array without using optical filters. Sensor arrays consist of amorphous silicon thin-film color sensors integrated on top of amorphous silicon readout transistors. The spectral sensitivity of the sensors is...

article

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

J. Knoch, Min Zhang, S. Mantl, J. Appenzeller

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1669 - 1674

The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation...

article

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

M. Marso, G. Heidelberger, K.M. Indlekofer, J. Bernat, more

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1517 - 1523

In this paper, the influence of a 10-nm-thick silicon-dioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal-oxide-semiconductor HFETs (MOSHFETs), based on an undoped AlGaN/GaN heterostructure on a SiC substrate, was investigated. Channel-conductivity results yield a nearly 50% increase of mobility in the MOSHFET samples...

article

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

H. Ishida, T. Murata, M. Ishii, Y. Hirose, more

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1524 - 1529

Orientation effect on AlGaN/GaN heterojunction field-effect transistors (HFETs) has been experimentally and theoretically examined in detail. The drain-currents of the fabricated AlGaN/GaN HFETs with various gate directions do not depend on the gate orientation, whereas those of GaAs-based HFETs strongly depend on the gate direction due to the piezoelectric charges induced around the gate electrode...

article

Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects

K. Goel, M. Saxena, M. Gupta, R.S. Gupta

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1623 - 1633

Two-dimensional (2-D) analytical modeling for a novel multiple region MOSFET device architecture-Tri-Material Gate Stack MOSFET-is presented, which shows reduced short-channel effects at short gate lengths. Using a three-region analysis in the horizontal direction and a universal depletion width boundary condition, the 2-D potential and electric field distribution in the channel region along with...

article

Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier lowering

R.A. Vega

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1593 - 1600

An Airy function transfer matrix tunneling model and the Wentzel-Kramers-Brillouin (WKB) tunneling model have been compared in the application to Schottky field effect transistors (SFETs) with and without the incorporation of Schottky barrier lowering (SBL). Model calculations have shown that the WKB model can predict tunneling current through a Schottky barrier with reasonable accuracy when SBL is...

article

Characteristics of an address discharge time lag in terms of a wall voltage in an AC PDP

Bhum Jae Shin

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1539 - 1542

The characteristics of an address discharge have been investigated in terms of a wall voltage, which plays an important role in achieving a high-speed address discharge in an ac plasma display panel. The wall-voltage conditions generated in a reset period are a considerable factor to reduce the address-discharge time lag. Based on the experimental results, the reset driving scheme in which an address...

article

Finite-element modeling of liquid-crystal hydrodynamics with a variable degree of order

R. James, E. Willman, F.A. FernandezFernandez, S.E. Day

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1575 - 1582

A finite-element model of liquid-crystal hydrodynamics based on the Qian and Sheng formulation has been developed. This formulation is a generalization of the Ericksen-Leslie theory to include variations in the order parameter, allowing for a proper description of disclinations. The present implementation is well suited to treat properly the various length scales necessary to model large regions yet...

article

A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM

Chien-Chung Hung, Ming-Jer Kao, Young-Shying Chen, Yung-Hung Wang, more

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1530 - 1538

Novel cell structures based on one transistor and two uneven magnetic tunnel junction cell and pillar write word line architecture are proposed to shrink the bit size with a potential down to 6 F² by a so-called extended via process, and to reduce the writing current by a factor of 2, combined with the nature of nonvolatility and high speed, making the magnetoresistive random access memory suitable...

article

Reducing power consumption in liquid-crystal displays

T.N. Ruckmongathan, M. Govind, G. Deepak

IEEE Transactions on Electron Devices > 2006 > 53 > 7 > 1559 - 1566

Power consumption in liquid-crystal displays is analyzed by including frequent polarity reversals and duty-cycle control. A multistep voltage profile is proposed to reduce the power consumption of multiplexed and nonmultiplexed displays. The authors have also shown that the reduction in the power consumption can be achieved with a minimal increase in hardware complexity of the drive electronics

INFONA - science communication portal

IEEE Transactions on Electron Devices

Contributors

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

Single-crystal zirconium carbide as a high-temperature thermionic cathode material

Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

Low frequency noise sources in InAlAs/InGaAs MODFETs

Colored solar cells with minimal current mismatch

Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networks

Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics

Vertically integrated amorphous silicon color sensor arrays

On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects

Comparison study of tunneling models for Schottky field effect transistors and the effect of Schottky barrier lowering

Characteristics of an address discharge time lag in terms of a wall voltage in an AC PDP

Finite-element modeling of liquid-crystal hydrodynamics with a variable degree of order

A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM

Reducing power consumption in liquid-crystal displays

Filter options

Publication date

Year

Content availability

Keywords

INFONA - science communication portal

IEEE Transactions on Electron Devices

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Year

Content availability

Keywords

Reporting an error / abuse

Sending the report failed

Accessibility options