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The following topics are dealt with: high performance MOSFET; electron transport and noise; advance gate stack; MEMS; microsensors; novel gate-stack CMOS solutions; advanced nanoscale device transport models; RF passive integration; carbon nanotubes; memory circuits; NVM high-K dielectrics; high voltage devices; injection devices; transport devices; imagers; light emitting devices; process integration;...
With the dramatic increase in mobile broadband communications and mobile digital content, a significant change is taking place. The mobile phone, the gorilla of the mobile industry, is shifting from being a voice centric to a data centric device. While continually shrinking the size of components to does drive improved mobility, it also highlights the dilemma of the display. The display must in fact...
Performance gap between computation in a chip and communication between chips is widening. "System in a package" (SiP) reduces chip distance significantly, enabling a high-speed and low-power interface. Electrical non-contact interfaces using inductive/capacitive coupling have advantages over mechanical interfaces employing through silicon vias (TSV) and micro bumps. In this paper, a perspective...
Having now produced devices with sufficient Q, thermal stability, aging stability, and manufacturability, vibrating RF MEMS technology is already finding its way into next generation timing and wireless applications. At this juncture, the technology is now poised to take its next logical steps: higher levels of circuit complexity and integration. In particular, as vibrating RF MEMS devices are perceived...
Single-electron transistors (SETs) are promising as future functional elements in LSIs, because of their low-power consumption and small size. Whereas, the low driving capability, the lack of compact model, and the oscillating Id-Vg characteristic of SETs make it difficult to use them in LSIs as alternatives of advanced MOSFETs. However, in ubiquitous era, LSIs are expected to be widely used not only...
CMOS technology is evolving deeper and deeper into the nanometer era. Highly integrated systems are now being designed, many of which are mixed-signal, including analog and/or RF parts. Although the technological roadmap stays on track, the actual design of circuits in 65nm and below becomes a big bottleneck, that may even turn out to be a showstopper, if not addressed properly. Rising design complexities,...
This talk describes how new understanding of conduction at the molecular scale can inform nanoscale MOSFET device engineering. A 'bottom-up' approach developed to explain conduction in molecules will be applied to the analysis of nanotransistors. The generalization of the simple approach to a rigorous treatment of quantum transport with dissipation will be introduced. Some results on the ultimate...
Compact modeling is an area that gets more and more mature. Collaborations and standardization efforts have emerged. In this paper we present some special requirements that are important when constructing physics-based compact models. We will substantiate our statements on two recent examples, an inductor model and a MOSFET model
This paper discusses the possibility of future large scale integration (LSI) of multi-gate device. FinFET is thought to be the most promising multi-gate device for LSI, because it easily realizes the self-aligned double-gate structure. At first, the feasibility of SRAM operation with FinFET in hp22 nm node is studied by simulation in terms of Vt fluctuation control. Next, it is demonstrated that FinFET...
Scaling to 45 nm node and below might necessitate the use of new processing steps (e.g. new gate stacks) or new device concepts such as FinFETs. Although intrinsic transistor speed increases with scaling, some analog performance parameters tend to degrade. In this paper we show with experimental results and simulations on analog and RF circuits that for high-speed and RF applications, downscaling...
We investigate power dissipation in quantum cellular automaton (QCA) circuits, focusing on the clocked version, and including also the contribution from the nonunitary efficiency of the charging process. The dissipated energy is computed from an integration on the V - Q plane over a complete clock cycle. Results show that power dissipation in a QCA cell, also including the efficiency of the refrigerator...
AlN contour-mode vibrating RF MEMS resonator technology is described as capable of low-loss filtering and frequency synthesis for next generation wireless devices. Contour-mode piezoelectric resonators can span frequencies from 10 MHz up to few GHz on the same silicon chip offering high quality factors in air (1,000-4,000) and low motional resistance (25-700 Omega). Low loss (<- 1.5 dB) electrically...
In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of...
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