The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The following topics are dealt with: high-k metal gate stacks; integrated circuits and manufacturing; advanced interconnect technology; displays, sensors, and MEMS; organic and flexible electronics; CMOS devices; solid-state and nanoelectronic devices; nonvolatile memory technologies; MONOS and nanocrystal memories; CMOS and interconnect reliability; modeling and simulation; nanotubes and nanowires;...
Extracellular signals of living cells provide much information of their cellular electrophysiology, which is extremely important for medical diagnosis and drug discovery. Extracting extracellular signal, however, is always difficult due to its small magnitude relative to the noise and apparently random direction of signal propagation. In this work, a low noise multi-electrode array (MEA) system has...
In this paper we proposed a method by which nanoparticles can be selectively injected based on mechanical vibrations, thermal heating, and electromagnetic waves. We have developed a nanoparticle manipulator using a MEMS based structure. We also demonstrated direct physical control of the interaction between yeast cells and nanoparticles in liquid for the first time. In this research, our aim is to...
GaN-based high electron mobility transistors (HEMTs) are the most promising option for power amplification at frequencies above 30 GHz. However, the difficult technology of nitride devices has hindered the aggressive scaling of these transistors needed for high frequency applications. Also, the need of a relatively thick passivation layer to avoid current collapse in these transistors has significantly...
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization techniques are utilized to enhance transistor speed. Advanced-low-K BEOL for this technology features 10 wiring levels with a novel K=2.75 film in selected levels. This film is a SiCOH-based dielectric optimized for stress to enable integration for enhanced performance. The resulting...
This paper investigated various approaches to integrate Cu and extra low-k dielectric (ELK, k=2.5~2.2) for dual damascene fabrication. We demonstrate a trench-first hard mask process flow without k degradation by ash-free process and a novel pore sealing technique. In addition, we have extended this pore sealing concept to a via-first PR mask approach for porous ELK of 2.2. Both optimized hard mask...
An advanced scalable Cu damascene process was developed using self-assembled porous silica with tetramethylcyclo-tetrasiloxane (TMCTS) treatment and selective electroless plating of Cu barrier. It is found that the TMCTS vapor treatment could recover process-induced damages after plasma ashing and chemical mechanical polishing, resulting in no line-width dependence of the effective dielectric constant...
A flexible, shock-resistant, and lightweight Braille sheet display has been successfully manufactured on a plastic film by integrating a plastic sheet actuator array with a high-quality organic transistor active matrix. This is the first demonstration, to the best of our knowledge, to integrate plastic MEMS (microelectromechanical systems) actuators with organic transistor active matrices, which opens...
Using bis(triisopropylsilylethynyl)pentacene (TIPS -pentacene), we have fabricated solution-processed OTFTs with mobility near 1.5 cm2 /Vmiddots. This is the highest mobility reported to date for solution-processed OTFTs. The organic semiconductor thin films used in these devices require no high temperature processing and also show remarkable molecular ordering, possibly related to the observed high...
Plasma damages have been studied in HfO2 stacks with metal gate. We demonstrate that some damages generated during the process can be self-cured during T > 475degC anneals used in metallization steps. Moreover, we show that hydrogen plasma at low temperature can be very effective to passivate interface defects although enhanced degradation is observed in the Hdeg annealed oxides
We present a new compact model for the junction capacitances and leakage currents in deep-submicron CMOS technologies. The model contains Shockley-Read-Hall generation/recombination, trap-assisted tunneling, band-to-band-tunneling, and avalanche breakdown. It has been validated for a wide range of bias and temperature, for NMOS and PMOS junctions, and for different CMOS generations
We have fabricated and tested sub-50nm gate length nMOSFETs with fT up to 290GHz to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. We have also developed an accurate, high frequency (1 -50GHz) model suitable for integration with digital CMOS
This paper describes the fabrication and performance of uniaxial strained silicon CMOS transistors with NiSi metal gate electrodes and ultra-thin 1.2nm gate oxide. This work offers the first comprehensive evaluation of Si CMOS devices integrating NiSi metal gate (FUSI) process with highly strained Si channels. Performance gains from FUSI gate stack and uniaxial strained Si channels are demonstrated...
Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extension (SDE) resistance in pMOSFET are improved by combination of optimized Sigma shaped SiGe-SD and slit-embedded B-doped SiGe-SDE. Electron and hole mobility...
This work represents the first electro-thermal study of metallic single-wall carbon nanotubes (SWNTs) for interconnect applications. Experimental data and careful modeling reveal that self-heating is of significance in short (1 < L < 10 mum) nanotubes under high-bias. The low-bias resistance of micron scale SWNTs is also found to be affected by optical phonon absorption (a scattering mechanism...
A reduction in phase noise by 13 dB has been obtained over a previous 60-MHz surface-micromachined micromechanical resonator oscillator by replacing the single resonator normally used in such oscillators with a mechanically-coupled array of them to effectively raise the power handling ability of the frequency selective tank. Specifically, a mechanically-coupled array of nine 60-MHz wine-glass disk...
A statistical evaluation of the absolute and matching tolerances of the resonance frequencies of surface-micromachined micromechanical 1-port disk resonators is conducted by fabricating and measuring a large quantity (>100) of devices in both polysilicon and nanocrystalline diamond structural materials. Through this analysis, respective average resonance frequency absolute and matching tolerances...
We developed a clamped-clamped beam micromechanical resonator for actual use in VHF applications. This three-port resonator showed good frequency spectra with a large peak height of 25 dB and a low background level of -77 dB. We designed a parallel beam layout incorporating this resonator for a bandpass filter. Fabricated bandpass filter has a bandwidth of 3.8 MHz at a center frequency of 97 MHz....
This paper describes the realization of low-power high-speed micro gas chromatography columns for portable gas analysis systems. The 25cm-long ultra-low-mass MEMS columns, fabricated using stress-free PECVD-oxynitride films in a CMOS-compatible process, allow high-performance separations of n-alkane gas mixtures, are capable of multi-second analysis, and can dissipate less than 10mW at 150degC in...
A novel p-channel NAND-type non-volatile flash memory using nitride-trapping device is presented. The p-channel device is programmed by very efficient band-to-band tunneling hot electron (BBHE), and erased by self-converging channel hole tunneling. An ultra-thin bandgap engineered ONO tunneling dielectric as presented in H. T. Lue et al. (2005) is adopted to achieve efficient hole-tunneling erase...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.