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In this paper, thorough study of Analytical thermal noise models for MOSFET is presented. Since the advent of basic MOSFET, various researchers develop the noise model. As, the device is shrinking the enhancement of the noise in the device attract researchers to make advances in the model according to new physical phenomenon that occur in deep sub-micron level. We are presented here, a review of recent...
In this paper the performance analysis of CNTFET inverter under the variation of temperature and oxide thickness presented. The influence of variation of parameters on the characteristics of CNTFET inverter is simulated and analyzed using H-SPICE tool and Stanford nano model-39 of CNTFET. It's been observed that the effect of change in temperature and oxide thickness has little effect on rise and...
Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). NBTI causes the degradation of drive current and threshold voltage of p-MOSFETs. This paper presents the comparison of DC and pulse train analysis on sub micrometer pMOSFETs lifetime prediction using on-the-fly (OTF) method. The SiO2 conventional PMOS transistor having effective oxide thickness (EOT) between 1.8nm and...
Design simulation is a good method that can be used together with other FA techniques to isolate the root cause of device failures. It is also useful in situations where conventional fault isolation techniques cannot be utilized. This paper presents a case study in which the use of design simulation together with nano-probing is used to successfully identify the root cause of a processor IO glitch...
This paper presents a two-dimensional (2D) analytical model for threshold voltage of fully depleted graded-channel silicon-on-insulator (SOI) MOSFETs. The two-dimensional Poisson's equation is solved in different channel regions with parabolic approximation by using suitable boundary conditions. The effect of different device parameters on device performance has been studied. Results confirmed that...
This work addresses the effect of gate misalignment on the electrical characteristics of MOSFET structures with trapezoidal gate shapes. Differential Triangular test structure are used for the extraction of misalignments between gate and the other transistor structures, as a function of the differences in drain currents. Three-dimensional numerical simulation was used for comparison and verification...
Power device reliability is one of the key challenges of next generation Smart-Power technologies. As a consequence, device performance needs to be optimized accounting for hot-carrier stress degradation issues. To this purpose, numerical simulation tools are commonly used, but the TCAD modeling of performance drifts due to electrical stress is still an open issue. Physics-based analytical models...
In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure. The simulation results show that breakdown voltage can be enhanced about 3...
In this paper, a novel power system module (PSM) is developed by integrating the vertical input capacitor inside the package. Comparing with the traditional PSM, the novel PSM has better electrical performance with less parasitic inductance and switching loss, due to a small loop from the input capacitor to the MOSFETs. A comprehensive modeling study is carried out to assess the assembly stress, thermal...
In this paper we propose a new physically-based analytical model for junctionless transistors. Various MOSFET architectures based on single-gate (SG), double-gate (DG) and Gate-All-Around (GAA) transistors are studied. In particular the trade-off between the electrostatic control and the current drivability (first-order evaluation) is evaluated. Comparisons between numerical and analytical results...
Gate-All-Around (GAA) nanowire architecture is aimed to represent the ultimate integration for MOSFET up to dimensions of several nanometers. Very thin nanowires (<; 5 nm) are expected to be used in these ultimate devices, for which a new physical phenomenon emerges: the modification of the band structure compared to bulk silicon, which changes the conduction properties and affects the device characteristics...
With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the micro processor industry. In this paper, we develop an analytical model to capture the impact of NBTI in the presence of PV for use in architecture simulations. We capture the following aspects in the model: i) variation in NBTI related...
In this work, the interface coupling in short-channel Multiple-gate MOSFETs (MuGFETs) structures is modelled. Based on the solution of the 3D Laplace's equation, the short-channel subthreshold characteristics (Subthreshold current, Subthreshold Slope, Roll-off and DIBL) are calculated and compared to experimental data with an excellent agreement, and without the need of any fitting parameters. The...
The scaling of MOSFETs has improved performance and lowered the cost per function of CMOS integrated circuits and systems over the last 40 years, but devices are subject to increasing amounts of statistical variability within the deca-nano domain. The causes of these statistical variations and their effects on device performance have been extensively studied, but there have been few systematic studies...
Adequate ESD protection is a new design challenge for HV electronics. This paper presents design, failure analysis and optimization of a HVggLDMOS ESD protection structure in a HV BCD process. Theoretical analysis involving Kirk effect and mixed-mode ESD simulation-design technique were used to analyze experimental results and to optimize the HV ESD protection structure.
This paper presents a physics-based, analytical model for sidewall parasitic capacitance of nano-scale MOSFETs. Trench isolated MOSFETs have been considered in the 90 nm technology node. An analytical expression for the trench oxide parasitic capacitance is derived by taking into account the enhanced depletion depth caused due to gate fringing field at the trench oxide sidewalls and dopant redistribution...
Quantum mechanical analytical modeling for calculating the drain current of FinFET devices has been proposed in this paper. The work is presented for a FinFET structure with channel length of 30 nm, Fin height of 30 nm and Fin thickness of 20 nm. The variation of drain current with applied drain voltage and gate voltage for varying channel lengths and Fin thicknesses has also been evaluated. Our analytical...
A compact, physical surface potential model for undoped Gate All Around (GAA) MOSFETs has been derived based on a novel analytical solution of the 3-D Poisson equation with the mobile charge term included. The new model is verified by published numerical simulator, Silvaco Device simulator Atlas with close agreement. Applying the newly developed model, the channel potential versus gate voltage characteristics...
A core model is developed in order to obtain, for the first time, analytical expressions of the subthreshold characteristics of advanced Pi-gate Multiple-gate FET transistors. Based on the resolution of the 3D Laplace's equation, the interface coupling in the structure is accurately described. The short-channel characteristics (Subthreshold Slope and DIBL) are calculated and compared to experimental...
Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 105 microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed...
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