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This work describes a microwave photonic filter (MPF) that exhibits five band-pass windows at multiples of 2.0GHz into the frequency range of 0.1–12GHz. A novel electrical microwave band-pass filter (BPF) is designed and fabricated to operate at 4.0GHz. The fabricated BPF exhibits a compact size, low losses, high selectivity and high spurious frequency; these characteristics permit its inclusion into...
This article presents the implementation of an Electroencephalogram — EEG system less susceptible to electromagnetic interference — EMI. The amplification, filtering and A/D conversion are placed directly over each electrode. Due to the local amplification and conversion, the system becomes more resilient to EMI and consequently the results are trustier. It was developed a central chip or hub that...
The goal of this work is to study parameters related to the analog performance of tunnel field effect transistors (TFETs). The obtained results have been analyzed in terms of temperature variation (ranging from 25°C to 150°C) and source composition (Sh-xGex and 100% Si). The first part is focused on characteristic curves of the drain current as a function of gate voltage and drain voltage. Next step...
This paper presents an efficient design of low-complexity wide-band compensators to improve the passband characteristic of Cascaded Integrator Comb (CIC) filters. The proposed compensators are designed using the amplitude transformation method recently presented in a companion paper. This work also provides a simple formula to obtain the coefficients of the compensator. Design examples and comparisons...
This paper presents an experimental comparison of the analog performance between a triple-gate FinFET fabricated on Bulk (BFF) and on Silicon-On-Insulator — SOI (SFF) substrates. This comparison was performed based on the drain current, subthreshold swing, transconductance, output conductance and finally the intrinsic voltage gain. For narrow fin width, the SFF presents better performance than BFF,...
A set of experimental results showing a source-to-drain and drain-to-source reversible channel current in a 28 nm nMOSFET is introduced. By numerical modeling we found out that the reversible channel current is understood bY incorporating the Density Gradient (DG) theory, which explains the reversible current by a change of sign in the gradient of the generalized quantum potential along the channel...
This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (VB=VG) over the conventional one (VB=0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (VB=k×VG) and the inverse eDT mode (VG=k×VB) were also considered and compared to the other...
This study presents an experimental analysis of the Xray radiation effect on the drain induced barrier lowering (OIBL) of strained and unstrained, p and n type triple gate SOI MuGFETs. In both types of devices, the narrow fin transistors are more immune to radiation because of the better coupling among the gates. It is shown that total dose damage in nMuGFETs always leads to a performance degradation,...
In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain...
Application of plasmonics in optical communications has recently attracted significant research interest in the hope of overcoming the big mismatch between the footprints of electronic and photonic integrated circuits. This hope is based on the unique properties of the plasmonic devices, such as the confinement of light into subwavelength dimension. which enables breaking the diffraction limit and...
Striplines present more than one resonance around frequencies at which multiples of half the wavelength of the propagated signals equal the spacing between fiber yarns along their path within a PCB. In this paper, a method to obtain the effective propagation constant and characteristic impedance considering this undesired effect is proposed. This allows the proper representation of striplines to assess...
Significant progress has been made in the field of neural prosthetics lately. In order to improve and invent novel wearable and implantable devices, low power consumption is one of the most important concerns. This article discusses low power circuits which are designed, fabricated and tested in our lab which are essential building blocks for neural prosthetics. The circuits include a nano-power current...
In this work, a low-voltage implementation for continuous-time ΣΔ analog-to-digital converters is proposed. The low-voltage implementation technique is based on implementing the sigma delta integrators using CMOS inverters. The proposed technique is applied to a third-order single loop modulator. The first integrator in the loop filter is an active RC integrator, while the remaining integrators are...
An analysis of the level of hot carrier (HC) degradation caused in sub-100 nm n-type MOSFETs operated from DC up to 20 GHz, is introduced. The analysis comes accompanied with experimental results. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the...
This paper addresses a simultaneous analysis of the intrinsic length (LI) variation and substrate doping concentration on the AC operation of multifinger SOI PIN photodiodes, in order to investigate the best performance for each application. The results showed that the best frequency response was achieved for devices with smaller L1 values and higher substrate doping concentrations, reaching a 3 dB...
In this paper a study of the recovery time after a high-amplitude input transitory voltage is evaluated, for a low-frequency bio-potential amplifier. The importance of this parameter for very small low frequency cut-off circuits relies on the expectation, given by the linear model, that the amplifier may take hundreds of seconds to come out of the saturation state, what could be unacceptable for real...
An analytic approach to prototype RF Power Amplifiers is demonstrated at 3.5 GHz. The approach can predict not only matching impedances to high accuracy, but also the small signal gain and PldB in comparison to measurement. Moreover, the method allows a simple and direct route to correlate device and process technology to RF system performance currently unfeasible via TCAD modelling. The work is motivated...
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