The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper presents the application for the first time, to our knowledge, of MEMS devices in the field of high power, high voltage lines. We show how these devices can be used for measuring instantaneous voltage value in real-life industrial conditions. The high voltage MEMS device allows a voltage measurement relative error less than 0,1 % in normal conditions while during a strong earthquake (0,28g...
Low power n-channel fully depleted local-SOI FinFET integrated sensors have been developed and validated for the amplification of pH sensing signals. A simple architecture with one FinFET connected as depletion-mode load and another one as driving sensor, provides a maximum readout gain of 6.6 V/V with a maximum pH readout sensitivity of 185 mV/pH, at 2 V operation. By comparing the proposed amplifier...
Ferroelectricity in hafnium oxide was reported for the incorporation of Al [1], Si [2], Y [3] and Gd [4] or in a solid solution with the chemically similar ZrO2 [5]. Here, we report strontium as the first bivalent and — so far — largest dopant in terms of atomic radius also inducing ferroelectric behavior. Besides the solid solution of HfO2/ZrO2 for Sr:HfO2, ferroelectricity is observed in the widest...
Advanced planar MOSFET and FinFET transistors on SOI have been characterized under high magnetic field. The geometrical magnetoresistance stands as the most accurate and indisputable technique for mobility measurements. Our results show that this method is also effective in both planar (FD-SOI) and vertical (FinFET) transistors with ultrathin body. For the first time, we apply the magnetoresistance...
Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and does not require a high-temperature sintering step. However, this method can produce large variations...
Perpendicular Nanomagnetic Logic (pNML) is a computing concept, where the local magnetization and fringing fields of ferromagnets are used to store and process information. So far, pNML devices have been exclusively operated at millisecond time scales. In this work, pNML magnets are clocked by a planar on-chip inductor at frequencies ranging from 100 kHz to 10 MHz. The inherent switching field (SF)...
We present a study of lateral silicon p-i-n light-emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only...
This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide — based wafer. T-gate technology has been used for the maximisation of the transistor performance. Devices with a 70 nm long gate foot...
Metal induced effects on electrical characteristics in AlGaN/GaN Schottky HEMT are reported. Focus is given to the collapse of drain current attributed to Schottky metal. Of particular interest for discussion is that TiN gate can suppresses the collapse of drain current compared with conventional Ni gate. Nitrogen concentrations in TiN gate are found to be correlated to the current collapse, indicating...
The connection between the resistive-RAM (RRAM) operational-mechanism, performance, and utilized-dielectric-properties is described. Specifically, the atomic-level description of bi-polar hafnia-based RRAM, which operations involve the repeatable rupture/recreation of a localized conductive path, reveals that its performance is determined by the outcome of the initial forming process; defining the...
Thulium silicate has been demonstrated as a possible replacement of chemical oxide interfacial layers for extended scalability of high-k/metal gate MOSFETs. In this work, thulium silicate was integrated in a scaled HfO2/TiN gate-last CMOS process, achieving an EOT of 0.65 nm and well-behaved and reproducible IV and CV characteristics with almost symmetric threshold voltages, low subthreshold slope...
Low temperature 3D wafer stacking for very high density device integration is achieved using the Smart Cut™ technology and solid phase re-crystallization. Thin silicon PN bi-layers of high quality are transferred onto new handle substrate without exceeding 500°C. The current-voltage characteristics of the intrinsic PN diode are significantly improved by using low temperature solid-phase epitaxial...
We show experimentally that the first reset operation of forming-free HfOx based RRAM devices is of bulk type where the reset current is area dependent. Moreover, the device pristine resistance shows a weak inverse proportionality to temperature, which we associate to a sub-stoichiometric HfOx matrix created during device fabrication. Finally, we use ab initio calculations to gain insight into the...
This paper presents statistical characterization of Random Telegraph Noise (RTN) in hafnium-oxide-based Resistive Random Access Memories (RRAMs) in High Resistive State (HRS). Complex RTN signals are analyzed exploiting a Factorial Hidden Markov Model (FHMM) approach, allowing to derive the statistical properties of traps responsible of the multi-level RTN measured in these devices. Noise characteristics...
In this paper, we have fabricated uniaxially tensile strained In0.33Ga0.47As-OI MOSFETs, for the first time, using a lateral strain relaxation technique. A stripe-like line structure was fabricated from biaxially-strained In0.53Ga0.47As-OI. This structure exhibits the lateral strain relaxation. We have found that μeff in strained In0.53Ga0.47As-OI MOSFETs decreases with a decrease in the gate width...
We study the kinetics of bipolar resistive switches in tantalum oxide thin films having different thicknesses. The time to switch from the high resistance state to the low resistance state (SET) is measured repeatedly in a single cell of each sample and analyzed based on a Weibull distribution. In the thin film device the Weibull parameter fJ> 1 is observed in the short time region, followed by...
The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field, was evaluated. The TFET was fabricated by inserting a parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit...
A new model and a theory to capture the effects of halo (pocket) implants on the flicker noise of the advanced-node MOSFETs have been proposed and verified with measurements. The model can accurately capture the bias dependence of the drain-current flicker-noise (FN) power density. Also for the first time, we explain and model the unexpected channel-length dependence of FN power density in strong-halo...
For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new control technique is proposed: the use of back-gate biasing. Characteristics such as low leakage, controllable...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.